Mazzanti, Andrea

Associate Professor

He was born in Modena (ITALY) in 1976. He received the Laurea and Ph.D. degrees in Electrical Engineering from the University of Modena, ITALY in October 2001 and March 2005 respectively.

In 2003 he spent a research period at Agere (Allentown-PA) working on low power CMOS RFICs. In November 2005 he became assistant professor at the Faculty of Engineering, University of Modena. In January 2010 he joined the Faculty of Engineering of the University of Pavia – ITALY, where he is now associate professor. He teaches the courses “Analog IC Design” and “Circuits and Systems for Wireline Communications” to students of the MSc degree in Electronic Engineering.

He started his research activity investigating processing and reliability of III-V transistors for Microwave power applications in collaboration with Alenia Marconi Systems, in 2001. From 2003 his research has been focused to the design of high frequency analog integrated circuits for communications, consumer electronics and medical instruments. The most important contributions are related to building blocks and sub-systems for RF and mmWave transceivers (VCOs, frequency dividers, amplifiers, receiver front-ends and synthesizers). He participated as principal investigator and co-investigator in several microelectronic research programs, funded by private companies, Italian government and European Community. At present he is in tight cooperation with STMicroelectronics (ST) in the framework of Studio di Microelettronica, a research lab joint between University and ST, located inside the Engineering Campus of the University of Pavia. He has been the advisor or co-advisor for more than 30 students in the preparation of their MSc or PhD thesis.

Dr. Mazzanti has published ≈80 papers on international conferences and journals which received ≈900 citations and the h factor is 16. In 2013 he has been included in the Top Authors list for the 60 years Anniversary of IEEE International Solid State Circuits Conference for having contributed 10 papers in the last 10 years of the conference. He is IEEE Senior Member and serves as reviewer for several journal papers (10 per year, on average) in the area of high frequency integrated circuits. He has been a member of the scientific committee of the IEEE Custom Integrated Circuits Conference from 2008 to 2014. Since 2014 he is member of the scientific committee of the IEEE International Solid State Circuits Conference (ISSCC) and the IEEE European Solid State Circuits Conference (ESSCIRC). He has been Guest Editor for the issue of the IEEE Journal of Solid State Circuits dedicated to IEEE-CICC 2013 and 2014. Since 2012 he is Associate Editor for the IEEE Trans. on Circuits and Systems-I.


CONTACT

E-mail: andrea.mazzanti@unipv.it
Office: +39 0382 985073


PUBLICATIONS

2017

  • [DOI] M. Sautto, A. S. Savoia, F. Quaglia, G. Caliano, and A. Mazzanti, “A Comparative Analysis of CMUT Receiving Architectures for Design Optimization of Integrated Transceiver Front-Ends,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. PP, iss. 99, pp. 1-1, 2017.
    [Bibtex]
    @ARTICLE{7852516, 
    author={M. Sautto and A. S. Savoia and F. Quaglia and G. Caliano and A. Mazzanti}, 
    journal={IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control}, 
    title={A Comparative Analysis of CMUT Receiving Architectures for Design Optimization of Integrated Transceiver Front-Ends}, 
    year={2017}, 
    volume={PP}, 
    number={99}, 
    pages={1-1}, 
    keywords={Acoustics;Frequency response;Imaging;Sensitivity;Signal to noise ratio;Transducers;Ultrasonic imaging;BCD-SOI;T/R switch;Ultrasonic transceiver;capacitive micromachined ultrasonic transducer (CMUT);capacitive sensor;high-voltage (HV) driver;low-noise amplifier;sensor interface;ultrasound}, 
    doi={10.1109/TUFFC.2017.2668769}, 
    ISSN={0885-3010}, 
    month={},}

2016

  • [DOI] L. Iotti, A. Mazzanti, and F. Svelto, “A low-power 64 #8211;84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications,” in 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2016, pp. 1-4.
    [Bibtex]
    @INPROCEEDINGS{7519470, 
    author={L. Iotti and A. Mazzanti and F. Svelto}, 
    booktitle={2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)}, 
    title={A low-power 64 #8211;84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications}, 
    year={2016}, 
    pages={1-4}, 
    keywords={BiCMOS integrated circuits;frequency multipliers;frequency synthesizers;millimetre wave resonators;transformers;BiCMOS mm-wave frequency quadrupler;E-band backhaul applications;E-band frequency synthesizer;E-band wireless backhaul;GBW enhancement;fractional bandwidth;frequency 64 GHz to 84 GHz;low-power frequency quadrupler;power 7 mW;single-ended-to-differential conversion;transformer coupled resonators;Bandwidth;Couplings;Frequency measurement;Impedance matching;Mixers;Phase transformers;Resonant frequency;BiCMOS;E-Band;frequency multiplier;frequency quadrupler;mm-Wave;transformer-coupled resonators}, 
    doi={10.1109/PRIME.2016.7519470}, 
    month={June},}
  • [DOI] L. Iotti, A. Mazzanti, and F. Svelto, “A multi-core VCO and a frequency quadrupler for E-Band adaptive-modulation links in 55nm BiCMOS,” in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, pp. 373-376.
    [Bibtex]
    @INPROCEEDINGS{7598319, 
    author={L. Iotti and A. Mazzanti and F. Svelto}, 
    booktitle={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, 
    title={A multi-core VCO and a frequency quadrupler for E-Band adaptive-modulation links in 55nm BiCMOS}, 
    year={2016}, 
    pages={373-376}, 
    keywords={BiCMOS integrated circuits;MIMIC;integrated circuit noise;millimetre wave oscillators;millimetre wave resonators;multiprocessing systems;phase noise;radio links;voltage-controlled oscillators;BiCMOS VCO;E-Band wireless backhaul applications;E-band adaptive-modulation links;bandwidth enhancement;frequency quadrupler;multicore VCO;multicore architecture;phase-noise performance;single-ended-to-differential conversion;size 55 nm;transformer-coupled resonators;BiCMOS integrated circuits;Couplings;Phase noise;Resonant frequency;Tuning;Voltage-controlled oscillators}, 
    doi={10.1109/ESSCIRC.2016.7598319}, 
    month={Sept},}
  • [DOI] G. Anzalone, E. Monaco, G. Albasini, S. Erba, and A. Mazzanti, “A 0.2-11.7GHz, high accuracy injection-locking multi-phase generation with mixed analog/digital calibration loops in 28nm FDSOI CMOS,” in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, pp. 335-338.
    [Bibtex]
    @INPROCEEDINGS{7598310, 
    author={G. Anzalone and E. Monaco and G. Albasini and S. Erba and A. Mazzanti}, 
    booktitle={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, 
    title={A 0.2-11.7GHz, high accuracy injection-locking multi-phase generation with mixed analog/digital calibration loops in 28nm FDSOI CMOS}, 
    year={2016}, 
    pages={335-338}, 
    keywords={CMOS integrated circuits;MMIC mixers;UHF detectors;UHF integrated circuits;UHF measurement;UHF mixers;calibration;clocks;comparators (circuits);field effect MMIC;injection locked oscillators;low-power electronics;microwave detectors;microwave measurement;mixed analogue-digital integrated circuits;phase detectors;silicon-on-insulator;FDSOI CMOS;ILRO;digital coarse calibration;frequency 0.2 GHz to 11.7 GHz;high accuracy injection-locking multiphase generation;high-accuracy 8-phase clock generation;injection-locked ring oscillator;mixed analog-digital calibration loops;passive mixers;phase correction;phase detector;power consumption;quadrature phase error;quarter-rate multistandard I/O receivers;size 28 nm;temperature variations;window comparator;Calibration;Clocks;Phase noise;Silicon-on-insulator;Temperature measurement;Tuning}, 
    doi={10.1109/ESSCIRC.2016.7598310}, 
    month={Sept},}
  • [DOI] P. F. Espin-Lopez, A. Martellosio, M. Pasian, M. Bozzi, L. Perregrini, A. Mazzanti, F. Svelto, M. Bellomi, G. Renne, and P. E. Summers, “Breast cancer imaging at mm-waves: Feasibility study on the safety exposure limits,” in 2016 46th European Microwave Conference (EuMC), 2016, pp. 667-670.
    [Bibtex]
    @INPROCEEDINGS{7824431, 
    author={P. F. Espin-Lopez and A. Martellosio and M. Pasian and M. Bozzi and L. Perregrini and A. Mazzanti and F. Svelto and M. Bellomi and G. Renne and P. E. Summers}, 
    booktitle={2016 46th European Microwave Conference (EuMC)}, 
    title={Breast cancer imaging at mm-waves: Feasibility study on the safety exposure limits}, 
    year={2016}, 
    pages={667-670}, 
    keywords={cancer;dosimetry;finite element analysis;microwave imaging;millimetre wave imaging;tumours;European ICNIRP recommendations;European clinical center;X-ray mammography;breast cancer imaging;cancer anomaly;dosimetric quantities;finite element method;human tissues;magnetic resonance imaging;medical therapies;microwave imaging system;mm-wave breast cancer imaging system;safety exposure limits;ultrasound imaging;Antennas;Breast cancer;Fats;Imaging;Receivers;Skin;Biological applications;breast cancer detection;dielectric spectroscopy;exposure safety and regulations;microwave and mm-wave imaging;specific absorbtion rate (SAR)}, 
    doi={10.1109/EuMC.2016.7824431}, 
    month={Oct},}
  • [DOI] A. Martellosio, M. Pasian, M. Bozzi, L. Perregrini, A. Mazzanti, F. Svelto, P. E. Summers, G. Renne, L. Preda, and M. Bellomi, “Dielectric Properties Characterization From 0.5 to 50 GHz of Breast Cancer Tissues,” IEEE Transactions on Microwave Theory and Techniques, vol. PP, iss. 99, pp. 1-14, 2016.
    [Bibtex]
    @ARTICLE{7781570, 
    author={A. Martellosio and M. Pasian and M. Bozzi and L. Perregrini and A. Mazzanti and F. Svelto and P. E. Summers and G. Renne and L. Preda and M. Bellomi}, 
    journal={IEEE Transactions on Microwave Theory and Techniques}, 
    title={Dielectric Properties Characterization From 0.5 to 50 GHz of Breast Cancer Tissues}, 
    year={2016}, 
    volume={PP}, 
    number={99}, 
    pages={1-14}, 
    keywords={Breast;Dielectrics;Permittivity;Permittivity measurement;Probes;Sensors;Biomedical applications;breast cancer;dielectric characterization;dielectric properties;ex vivo tissues;microwave imaging;millimeter-waves;sensitivity;specificity.}, 
    doi={10.1109/TMTT.2016.2631162}, 
    ISSN={0018-9480}, 
    month={},}
  • [DOI] M. Bassi, F. Radice, M. Bruccoleri, S. Erba, and A. Mazzanti, “A High-Swing 45 Gb/s Hybrid Voltage and Current-Mode PAM-4 Transmitter in 28 nm CMOS FDSOI,” IEEE Journal of Solid-State Circuits, vol. 51, iss. 11, pp. 2702-2715, 2016.
    [Bibtex]
    @ARTICLE{7558236, 
    author={M. Bassi and F. Radice and M. Bruccoleri and S. Erba and A. Mazzanti}, 
    journal={IEEE Journal of Solid-State Circuits}, 
    title={A High-Swing 45 Gb/s Hybrid Voltage and Current-Mode PAM-4 Transmitter in 28 nm CMOS FDSOI}, 
    year={2016}, 
    volume={51}, 
    number={11}, 
    pages={2702-2715}, 
    keywords={CMOS integrated circuits;electrostatic discharge;equalisers;pulse amplitude modulation;semiconductor diodes;silicon-on-insulator;transmitters;CMOS;FDSOI;HBM ESD diodes;NRZ;PAM-4 transmitter;bit rate 400 Gbit/s;bit rate 45 Gbit/s;current 120 mA;duty-cycle correction circuit;electrical links;feed-forward equalizer;half-rate serializer;size 28 nm;voltage 1 V;voltage 1.3 V;voltage 2 kV;word length 5 bit;Distortion;Linearity;Modulation;Optical signal processing;Signal to noise ratio;Topology;Transmitters;Feed-forward equalizer;PAM-4;SerDes;transmitter;wireline}, 
    doi={10.1109/JSSC.2016.2598223}, 
    ISSN={0018-9200}, 
    month={Nov},}
  • [DOI] L. Iotti, A. Mazzanti, and F. Svelto, “A multi-core VCO and a frequency quadrupler for E-Band adaptive-modulation links in 55nm BiCMOS,” in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, pp. 373-376.
    [Bibtex]
    @INPROCEEDINGS{7598319, 
    author={L. Iotti and A. Mazzanti and F. Svelto}, 
    booktitle={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, 
    title={A multi-core VCO and a frequency quadrupler for E-Band adaptive-modulation links in 55nm BiCMOS}, 
    year={2016}, 
    pages={373-376}, 
    keywords={BiCMOS integrated circuits;MIMIC;integrated circuit noise;millimetre wave oscillators;millimetre wave resonators;multiprocessing systems;phase noise;radio links;voltage-controlled oscillators;BiCMOS VCO;E-Band wireless backhaul applications;E-band adaptive-modulation links;bandwidth enhancement;frequency quadrupler;multicore VCO;multicore architecture;phase-noise performance;single-ended-to-differential conversion;size 55 nm;transformer-coupled resonators;BiCMOS integrated circuits;Couplings;Phase noise;Resonant frequency;Tuning;Voltage-controlled oscillators}, 
    doi={10.1109/ESSCIRC.2016.7598319}, 
    month={Sept},}
  • [DOI] G. Anzalone, E. Monaco, G. Albasini, S. Erba, and A. Mazzanti, “A 0.2-11.7GHz, high accuracy injection-locking multi-phase generation with mixed analog/digital calibration loops in 28nm FDSOI CMOS,” in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, pp. 335-338.
    [Bibtex]
    @INPROCEEDINGS{7598310, 
    author={G. Anzalone and E. Monaco and G. Albasini and S. Erba and A. Mazzanti}, 
    booktitle={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, 
    title={A 0.2-11.7GHz, high accuracy injection-locking multi-phase generation with mixed analog/digital calibration loops in 28nm FDSOI CMOS}, 
    year={2016}, 
    pages={335-338}, 
    keywords={CMOS integrated circuits;MMIC mixers;UHF detectors;UHF integrated circuits;UHF measurement;UHF mixers;calibration;clocks;comparators (circuits);field effect MMIC;injection locked oscillators;low-power electronics;microwave detectors;microwave measurement;mixed analogue-digital integrated circuits;phase detectors;silicon-on-insulator;FDSOI CMOS;ILRO;digital coarse calibration;frequency 0.2 GHz to 11.7 GHz;high accuracy injection-locking multiphase generation;high-accuracy 8-phase clock generation;injection-locked ring oscillator;mixed analog-digital calibration loops;passive mixers;phase correction;phase detector;power consumption;quadrature phase error;quarter-rate multistandard I/O receivers;size 28 nm;temperature variations;window comparator;Calibration;Clocks;Phase noise;Silicon-on-insulator;Temperature measurement;Tuning}, 
    doi={10.1109/ESSCIRC.2016.7598310}, 
    month={Sept},}
  • [DOI] L. Iotti, A. Mazzanti, and F. Svelto, “A low-power 64-84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications,” in 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2016, pp. 1-4.
    [Bibtex]
    @INPROCEEDINGS{7519470, 
    author={L. Iotti and A. Mazzanti and F. Svelto}, 
    booktitle={2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)}, 
    title={A low-power 64-84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications}, 
    year={2016}, 
    pages={1-4}, 
    keywords={BiCMOS integrated circuits;frequency multipliers;frequency synthesizers;millimetre wave resonators;transformers;BiCMOS mm-wave frequency quadrupler;E-band backhaul applications;E-band frequency synthesizer;E-band wireless backhaul;GBW enhancement;fractional bandwidth;frequency 64 GHz to 84 GHz;low-power frequency quadrupler;power 7 mW;single-ended-to-differential conversion;transformer coupled resonators;Bandwidth;Couplings;Frequency measurement;Impedance matching;Mixers;Phase transformers;Resonant frequency;BiCMOS;E-Band;frequency multiplier;frequency quadrupler;mm-Wave;transformer-coupled resonators}, 
    doi={10.1109/PRIME.2016.7519470}, 
    month={June},}
  • [DOI] M. Sautto, F. Quaglia, G. Ricotti, and A. Mazzanti, “5.6 A 420uW 100GHz-GBW CMOS Programmable-Gain Amplifier leveraging the cross-coupled pair regeneration,” in 2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, pp. 98-99.
    [Bibtex]
    @INPROCEEDINGS{7417925, 
    author={M. Sautto and F. Quaglia and G. Ricotti and A. Mazzanti}, 
    booktitle={2016 IEEE International Solid-State Circuits Conference (ISSCC)}, 
    title={5.6 A 420uW 100GHz-GBW CMOS Programmable-Gain Amplifier leveraging the cross-coupled pair regeneration}, 
    year={2016}, 
    pages={98-99}, 
    keywords={integrated circuit design;millimetre wave amplifiers;programmable circuits;GBW CMOS programmable-gain amplifier;PGA;analog applications;broadband positive feedback;cross-coupled pair regeneration;digital applications;discrete-time linear amplification;frequency 100 GHz;memory cells;power 420 muW;sense amplifiers design;static latches;Bandwidth;CMOS integrated circuits;CMOS technology;Capacitors;Electronics packaging;Gain control;Solid state circuits}, 
    doi={10.1109/ISSCC.2016.7417925}, 
    month={Jan},}
  • [DOI] M. Bassi, F. Radice, M. Bruccoleri, S. Erba, and A. Mazzanti, “3.6 A 45Gb/s PAM-4 transmitter delivering 1.3Vppd output swing with 1V supply in 28nm CMOS FDSOI,” in 2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, pp. 66-67.
    [Bibtex]
    @INPROCEEDINGS{7417909, 
    author={M. Bassi and F. Radice and M. Bruccoleri and S. Erba and A. Mazzanti}, 
    booktitle={2016 IEEE International Solid-State Circuits Conference (ISSCC)}, 
    title={3.6 A 45Gb/s PAM-4 transmitter delivering 1.3Vppd output swing with 1V supply in 28nm CMOS FDSOI}, 
    year={2016}, 
    pages={66-67}, 
    keywords={CMOS integrated circuits;driver circuits;forward error correction;pulse amplitude modulation;silicon-on-insulator;transmitters;white noise;4-tap FIR filter;CEI-56G;CM driver;CMOS FDSOI;FEC schemes;HBM ESD diodes;IEEE P802.3bs standards;PAM-4 signaling;PAM-4 transmitter;SNR;SST drivers;amplitude distortion minimization;bit rate 400 Gbit/s;bit rate 45 Gbit/s;current 120 mA;current-mode drivers;differential peak-to-peak swing;duty-cycle correction;equalization tuning;forward error correction scheme;half-rate serializer;low-loss profiles;next-generation electrical link technology;serial interfaces;size 28 nm;source-series terminated drivers;transmitter output amplitude;voltage 1 V;voltage 1.4 V;voltage 1.5 V;while noise power;CMOS integrated circuits;Current measurement;Distortion measurement;Finite impulse response filters;Linearity;Optical transmitters;Semiconductor device measurement}, 
    doi={10.1109/ISSCC.2016.7417909}, 
    month={Jan},}

2015

  • [DOI] J. Zhao, M. Bassi, A. Mazzanti, and F. Svelto, “A 15 GHz-bandwidth 20dBm PSAT power amplifier with 22% PAE in 65nm CMOS,” in Custom Integrated Circuits Conference (CICC), 2015 IEEE, 2015, pp. 1-4.
    [Bibtex]
    @INPROCEEDINGS{7338363, 
    author={J. Zhao and M. Bassi and A. Mazzanti and F. Svelto}, 
    booktitle={Custom Integrated Circuits Conference (CICC), 2015 IEEE}, 
    title={A 15 GHz-bandwidth 20dBm PSAT power amplifier with 22% PAE in 65nm CMOS}, 
    year={2015}, 
    pages={1-4}, 
    keywords={CMOS integrated circuits;IEEE standards;microwave amplifiers;microwave integrated circuits;power amplifiers;power combiners;CMOS;IEEE820.15;PAE;PSAT power amplifier;Wigig;bandwidth 15 GHz;coupled resonators;frequency 58.5 GHz to 73.5 GHz;gain 30 dB;gain-bandwidth product;power combiners;power splitters;size 65 nm;Bandwidth;Capacitors;Gain;Inductors;Power combiners;Power generation;Resonant frequency}, 
    doi={10.1109/CICC.2015.7338363}, 
    month={Sept},}
  • [DOI] F. Radice, M. Bruccoleri, E. Mammei, M. Bassi, and A. Mazzanti, “A low-noise programmable-gain amplifier for 25 Gb/s multi-mode fiber receivers in 28nm CMOS FDSOI,” in European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 – 41st, 2015, pp. 160-163.
    [Bibtex]
    @INPROCEEDINGS{7313853, 
    author={F. Radice and M. Bruccoleri and E. Mammei and M. Bassi and A. Mazzanti}, 
    booktitle={European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st}, 
    title={A low-noise programmable-gain amplifier for 25 Gb/s multi-mode fiber receivers in 28nm CMOS FDSOI}, 
    year={2015}, 
    pages={160-163}, 
    keywords={CMOS integrated circuits;integrated optoelectronics;low noise amplifiers;optical fibre communication;optical receivers;wideband amplifiers;CMOS FDSOI;Nyquist frequency;bit rate 25 Gbit/s;finely adjustable amplifier;high gain amplifier;intersymbol interference;low noise programmable gain amplifier;multimode fiber receiver;power 32 mW;size 28 nm;very low noise amplifier;wide bandwidth amplifier;CMOS integrated circuits;Electronics packaging;Gain;Inductors;Noise;Receivers;Shunts (electrical)}, 
    doi={10.1109/ESSCIRC.2015.7313853}, 
    ISSN={1930-8833}, 
    month={Sept},}
  • [DOI] F. Loi, E. Mammei, F. Radice, M. Bruccoleri, S. Erba, M. Bassi, and A. Mazzanti, “A 25-Gb/s FIR equalizer based on highly linear all-pass delay-line stages in 28-nm LP CMOS,” in Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE, 2015, pp. 303-306.
    [Bibtex]
    @INPROCEEDINGS{7337765, 
    author={F. Loi and E. Mammei and F. Radice and M. Bruccoleri and S. Erba and M. Bassi and A. Mazzanti}, 
    booktitle={Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE}, 
    title={A 25-Gb/s FIR equalizer based on highly linear all-pass delay-line stages in 28-nm LP CMOS}, 
    year={2015}, 
    pages={303-306}, 
    keywords={CMOS integrated circuits;FIR filters;all-pass filters;delay lines;equalisers;radio receivers;radiofrequency integrated circuits;4-tap FIR equalizer;BER;FIR filters;LP CMOS;SNR;adaptation techniques;bit rate 25 Gbit/s;channel frequency response;current 25 mA;high speed wireline receivers;input signal amplitude;linear all-pass delay-line stages;loss 20 dB;loss channel;size 28 nm;voltage 1 V;voltage 900 mV;Adders;Bit error rate;CMOS integrated circuits;CMOS technology;CMOS;FIR;adaptive equalizer;all-pass;wireline}, 
    doi={10.1109/RFIC.2015.7337765}, 
    month={May},}
  • [DOI] M. Bassi, J. Zhao, A. Bevilacqua, A. Ghilioni, A. Mazzanti, and F. Svelto, “A 40-67 GHz Power Amplifier With 13 dBm Psat and 16% PAE in 28 nm CMOS LP,” Solid-State Circuits, IEEE Journal of, vol. PP, iss. 99, pp. 1-11, 2015.
    [Bibtex]
    @ARTICLE{7065334, 
      author={Bassi, M. and Zhao, J. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}, 
      journal={Solid-State Circuits, IEEE Journal of}, 
      title={A 40-67 GHz Power Amplifier With 13 dBm Psat and 16% PAE in 28 nm CMOS LP}, 
      year={2015}, 
      month={}, 
      volume={PP}, 
      number={99}, 
      pages={1-11}, 
      keywords={Bandwidth;CMOS integrated circuits;Capacitance;Impedance;Inductors;Power amplifiers;Power generation;Broadband amplifiers;CMOS integrated circuits;coupled resonators;gain-bandwidth product;millimeter wave integrated circuits;power amplifiers;resonator filters}, 
      doi={10.1109/JSSC.2015.2409295}, 
      ISSN={0018-9200}
    }
  • [DOI] F. Svelto, A. Ghilioni, E. Monaco, E. Mammei, and A. Mazzanti, “The Impact of CMOS Scaling on the Design of Circuits for mm-Wave Frequency Synthesizers,” in High-Performance AD and DA Converters, IC Design in Scaled Technologies, and Time-Domain Signal Processing, P. Harpe, A. Baschirotto, and K. A. A. Makinwa, Eds., Springer International Publishing, 2015, pp. 233-252.
    [Bibtex]
    @INCOLLECTION{2015Svelto,
      author = {Svelto, Francesco and Ghilioni, Andrea and Monaco, Enrico and Mammei,
      Enrico and Mazzanti, Andrea},
      title = {The Impact of CMOS Scaling on the Design of Circuits for mm-Wave
      Frequency Synthesizers},
      booktitle = {High-Performance AD and DA Converters, IC Design in Scaled Technologies,
      and Time-Domain Signal Processing},
      publisher = {Springer International Publishing},
      year = {2015},
      editor = {Harpe, Pieter and Baschirotto, Andrea and Makinwa, Kofi A. A.},
      pages = {233-252},
      doi = {10.1007/978-3-319-07938-7_10},
      isbn = {978-3-319-07937-0},
      language = {English},
      timestamp = {2015.03.04},
      url = {http://dx.doi.org/10.1007/978-3-319-07938-7_10}
    }

2014

  • [DOI] D. Bianchi, F. Quaglia, A. Mazzanti, and F. Svelto, “Analysis and Design of a High Voltage Integrated Class-B Amplifier for Ultra-Sound Transducers,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 61, iss. 7, pp. 1942-1951, 2014.
    [Bibtex]
    @ARTICLE{2014Bianchi,
      author = {Bianchi, D. and Quaglia, F. and Mazzanti, A. and Svelto, F.},
      title = {Analysis and Design of a High Voltage Integrated Class-B Amplifier
      for Ultra-Sound Transducers},
      journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on},
      year = {2014},
      volume = {61},
      pages = {1942-1951},
      number = {7},
      month = {July},
      doi = {10.1109/TCSI.2014.2298284},
      issn = {1549-8328},
      keywords = {amplifiers;frequency response;integrated circuit design;linear network
      analysis;ultrasonic transducers;BCD technology;BCD6-SOI technology;apodization
      profiles;capacitance 150 pF;circuit analysis;device parameters;discrete
      technology approach;feedback loop;harmonic content;high voltage integrated
      class-B amplifier;high voltage trans-impedance stage;large signal
      frequency response;linear amplifiers;low-voltage transconductor;manufacturing
      costs;power 37 mW;resistance 100 ohm;signal amplitude;space occupation;transmit
      energy;ultra-sound applications;ultra-sound transducers;Bandwidth;Capacitance;Capacitors;Frequency
      response;Gain;Harmonic analysis;Impedance;BCD technology;class-B;descriptive
      function;high-voltage ICs;linear amplifier;ultrasound},
      timestamp = {2015.03.04}
    }
  • [DOI] D. Li, G. Minoia, M. Repossi, D. Baldi, E. Temporiti, A. Mazzanti, and F. Svelto, “A Low-Noise Design Technique for High-Speed CMOS Optical Receivers,” Solid-State Circuits, IEEE Journal of, vol. 49, iss. 6, pp. 1437-1447, 2014.
    [Bibtex]
    @ARTICLE{2014Li,
      author = {Dan Li and Minoia, G. and Repossi, M. and Baldi, D. and Temporiti,
      E. and Mazzanti, A. and Svelto, F.},
      title = {A Low-Noise Design Technique for High-Speed CMOS Optical Receivers},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2014},
      volume = {49},
      pages = {1437-1447},
      number = {6},
      month = {June},
      doi = {10.1109/JSSC.2014.2322868},
      issn = {0018-9200},
      keywords = {CMOS analogue integrated circuits;CMOS integrated circuits;integrated
      optoelectronics;operational amplifiers;optical receivers;photodiodes;100GBASE-LR4
      standard;BiCMOS realizations;PRBS31 input pattern;TSFE;bit rate 25
      Gbit/s;capacitance 160 pF;colored noise reduction;core first-stage
      amplifier;equalizer;high-speed CMOS optical receivers;limiting amplifier;low-noise
      design technique;low-noise narrowband transimpedance interface;low-noise
      wideband TIAs;net 4 × noise power reduction;optical communications;photodiode;power
      consumption;size 65 nm;traditional shunt-feedback TIA;transimpedance
      amplifiers;two-stage front-end;white noise components;wideband output
      buffer;Bandwidth;CMOS integrated circuits;Capacitance;Equalizers;Gain;Noise;Optical
      receivers;CMOS technology;current reuse;equalization;input-referred
      noise;optical receivers;shunt-feedback;transimpedance amplifiers
      (TIA)},
      timestamp = {2015.03.04}
    }
  • [DOI] E. Mammei, F. Loi, F. Radice, A. Dati, M. Bruccoleri, M. Bassi, and A. Mazzanti, “8.3 A power-scalable 7-tap FIR equalizer with tunable active delay line for 10-to-25Gb/s multi-mode fiber EDC in 28nm LP-CMOS,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International, 2014, pp. 142-143.
    [Bibtex]
    @INPROCEEDINGS{2014Mammei,
      author = {Mammei, E. and Loi, F. and Radice, F. and Dati, A. and Bruccoleri,
      M. and Bassi, M. and Mazzanti, A.},
      title = {8.3 A power-scalable 7-tap FIR equalizer with tunable active delay
      line for 10-to-25Gb/s multi-mode fiber EDC in 28nm LP-CMOS},
      booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC),
      2014 IEEE International},
      year = {2014},
      pages = {142-143},
      month = {Feb},
      doi = {10.1109/ISSCC.2014.6757373},
      issn = {0193-6530},
      keywords = {CMOS integrated circuits;FIR filters;equalisers;integrated optoelectronics;local
      area networks;low-power electronics;optical delay lines;optical fibre
      dispersion;optical pulse shaping;space division multiplexing;10GBASE-LRM
      standard;FIR filter;LAN;MMF;active delay line;bit rate 10 Gbit/s
      to 25 Gbit/s;channel response;electronic dispersion compensation;local
      area networks;low power CMOS;modal dispersion;multimode fiber EDC;nonlinear
      equalizer;power scalable 7-tap FIR equalizer;pulse shaping;signal
      processing;size 28 nm;space division multiplexing;CMOS integrated
      circuits;Delay lines;Equalizers;Finite impulse response filters;Optical
      fiber LAN;Optical fiber dispersion;Solid state circuits},
      timestamp = {2015.03.04}
    }
  • [DOI] E. Mammei, F. Loi, F. Radice, A. Dati, M. Bruccoleri, M. Bassi, and A. Mazzanti, “Analysis and Design of a Power-Scalable Continuous-Time FIR Equalizer for 10 Gb/s to 25 Gb/s Multi-Mode Fiber EDC in 28 nm LP CMOS,” Solid-State Circuits, IEEE Journal of, vol. 49, iss. 12, pp. 3130-3140, 2014.
    [Bibtex]
    @ARTICLE{2014Mammeia,
      author = {Mammei, E. and Loi, F. and Radice, F. and Dati, A. and Bruccoleri,
      M. and Bassi, M. and Mazzanti, A.},
      title = {Analysis and Design of a Power-Scalable Continuous-Time FIR Equalizer
      for 10 Gb/s to 25 Gb/s Multi-Mode Fiber EDC in 28 nm LP CMOS},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2014},
      volume = {49},
      pages = {3130-3140},
      number = {12},
      month = {Dec},
      doi = {10.1109/JSSC.2014.2345770},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;FIR filters;compensation;continuous time
      filters;equalisers;integrated optoelectronics;operational amplifiers;optical
      delay lines;optical fibre amplifiers;optical fibre dispersion;optical
      fibre filters;LP CMOS technology;active delay line elements;bit rate
      10 Gbit/s to 25 Gbit/s;bit rate 400 Gbit/s;circuit topology;dispersion
      compensation;filter tap coefficients;input data-rate variation;input
      data-rates;multimode fiber EDC;multimode fiber links;power 55 mW
      to 90 mW;power efficiency;power-scalable continuous-time 7-tap FIR
      equalizer;programmable transconductors;size 28 nm;test chips;transimpedance
      amplifier;ultra-compact equalizer;CMOS integrated circuits;Delay
      lines;Delays;Equalizers;Finite impulse response filters;Gain;Noise;28
      nm CMOS;FIR equalizer;all-pass;delay line;electronic dispersion compensation;multi-mode
      fiber},
      timestamp = {2015.03.04}
    }
  • [DOI] N. Sabatino, G. Minoia, M. Roche, D. Baldi, E. Temporiti, and A. Mazzanti, “A 5th order gm-C low-pass filter with +-3% cut-off frequency accuracy and 220MHz to 3.3GHz tuning-range in 28nm LP CMOS,” in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 – 40th, 2014, pp. 351-354.
    [Bibtex]
    @INPROCEEDINGS{2014Sabatino,
      author = {Sabatino, N. and Minoia, G. and Roche, M. and Baldi, D. and Temporiti,
      E. and Mazzanti, A.},
      title = {A 5th order gm-C low-pass filter with +-3% cut-off frequency accuracy
      and 220MHz to 3.3GHz tuning-range in 28nm LP CMOS},
      booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014
      - 40th},
      year = {2014},
      pages = {351-354},
      month = {Sept},
      doi = {10.1109/ESSCIRC.2014.6942094},
      issn = {1930-8833},
      keywords = {CMOS integrated circuits;UHF filters;UHF integrated circuits;VHF filters;calibration;field
      effect MMIC;integrated circuit design;low-pass filters;low-power
      electronics;microwave filters;power aware computing;5th order gm-C
      low-pass filter;LP CMOS technology;SNR;THD;calibration circuits;cut-off
      frequency accuracy;frequency 220 MHz to 3.3 GHz;gain control;integrator
      design;low power CMOS technology;master-slave approach;negative resistors;power
      5 mW to 30 mW;power dissipation scaling;size 28 nm;transconductance},
      timestamp = {2015.03.04}
    }
  • [DOI] M. Sautto, D. Leone, A. Savoia, D. Ghisu, F. Quaglia, G. Caliano, and A. Mazzanti, “A CMUT transceiver front-end with 100-V TX driver and 1-mW low-noise capacitive feedback RX amplifier in BCD-SOI technology,” in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 – 40th, 2014, pp. 407-410.
    [Bibtex]
    @INPROCEEDINGS{2014Sautto,
      author = {Sautto, M. and Leone, D. and Savoia, A. and Ghisu, D. and Quaglia,
      F. and Caliano, G. and Mazzanti, A.},
      title = {A CMUT transceiver front-end with 100-V TX driver and 1-mW low-noise
      capacitive feedback RX amplifier in BCD-SOI technology},
      booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014
      - 40th},
      year = {2014},
      pages = {407-410},
      month = {Sept},
      doi = {10.1109/ESSCIRC.2014.6942108},
      issn = {1930-8833},
      keywords = {biomedical imaging;biomedical ultrasonics;capacitive sensors;feedback
      amplifiers;microsensors;portable instruments;transceivers;ultrasonic
      imaging;ultrasonic transducers;BCD-SOI technology;CMUT transceiver
      front-end;SNR degradation;TX driver;capacitive micromachined ultrasound
      transducers;circuit techniques;electrical characterization;frequency
      1 MHz to 15 MHz;high performance portable ultrasound medical imaging;high
      voltage T/R switch;high-voltage devices;low-noise capacitive feedback
      RX amplifier;noise-power performance;parasitic capacitances;power
      1 mW;pulse-echo measurements;trans-resistance topology;transceiver;ultra-low-power
      RX amplifier;voltage 100 V;Capacitance;Imaging;Noise;Switches;Transceivers;Transducers;Ultrasonic
      imaging},
      timestamp = {2015.03.04}
    }
  • [DOI] A. S. Savoia, G. Caliano, A. Mazzanti, M. Sautto, A. D. Leone, D. U. Ghisu, and F. Quaglia, “An ultra-low-power fully integrated ultrasound imaging CMUT transceiver featuring a high-voltage unipolar pulser and a low-noise charge amplifier,” in Ultrasonics Symposium (IUS), 2014 IEEE International, 2014, pp. 2568-2571.
    [Bibtex]
    @INPROCEEDINGS{2014Savoia,
      author = {Savoia, A.S. and Caliano, G. and Mazzanti, A. and Sautto, M. and
      Leone, A.D. and Ghisu, D.U. and Quaglia, F.},
      title = {An ultra-low-power fully integrated ultrasound imaging CMUT transceiver
      featuring a high-voltage unipolar pulser and a low-noise charge amplifier},
      booktitle = {Ultrasonics Symposium (IUS), 2014 IEEE International},
      year = {2014},
      pages = {2568-2571},
      month = {Sept},
      doi = {10.1109/ULTSYM.2014.0641},
      keywords = {biomedical electronics;biomedical transducers;biomedical ultrasonics;integrated
      circuits;power consumption;ultrasonic imaging;ultrasonic transducers;1D
      CMUT linear arrays;BCD-SOI technology;ST microelectronics;T-R switching;capacitive
      feedback topology;frequency 1 MHz to 15 MHz;high-voltage unipolar
      pulser;low parasitic resistance;low-noise charge amplifier;low-power
      analog frontend circuit;medical imaging applications;noise-power
      performance;parasitic capacitance;power consumption;trans-resistance
      topology;ultralow-power fully integrated ultrasound imaging CMUT
      transceiver;Acoustics;Biomedical imaging;Power demand;Transceivers;Ultrasonic
      imaging;Voltage measurement;CMUT;capacitive micromachined ultrasonic
      transducers;charge amplifier;integrated circuit;low-power;unipolar
      pulser},
      timestamp = {2015.03.04}
    }
  • [DOI] J. Zhao, M. Bassi, A. Bevilacqua, A. Ghilioni, A. Mazzanti, and F. Svelto, “A 40-67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP,” in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 – 40th, 2014, pp. 179-182.
    [Bibtex]
    @INPROCEEDINGS{2014Zhao,
      author = {Junlei Zhao and Bassi, M. and Bevilacqua, A. and Ghilioni, A. and
      Mazzanti, A. and Svelto, F.},
      title = {A 40-67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS
      LP},
      booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014
      - 40th},
      year = {2014},
      pages = {179-182},
      month = {Sept},
      doi = {10.1109/ESSCIRC.2014.6942051},
      issn = {1930-8833},
      keywords = {CMOS analogue integrated circuits;differential amplifiers;field effect
      MIMIC;impedance matching;low-power electronics;millimetre wave power
      amplifiers;millimetre wave resonators;wideband amplifiers;CMOS LP;Norton
      transformations;PAE;PSAT;efficiency 16 percent;frequency 40 GHz to
      67 GHz;impedance matching;low-power devices;mm-wave PAs;neutralized
      common source stages;output matching networks;size 28 nm;two-stage
      differential PA;wideband inductively coupled resonators;wideband
      power amplifiers;wireless applications;Bandwidth;CMOS integrated
      circuits;Gain;Impedance;Impedance matching;Inductors;Power generation},
      timestamp = {2015.03.04}
    }

2013

  • [DOI] D. Bianchi, F. Quaglia, A. Mazzanti, and F. Svelto, “High-voltage integrated Class-B amplifier for ultrasound transducers,” in IC Design Technology (ICICDT), 2013 International Conference on, 2013, pp. 105-108.
    [Bibtex]
    @INPROCEEDINGS{2013Bianchi,
      author = {Bianchi, D. and Quaglia, F. and Mazzanti, A. and Svelto, F.},
      title = {High-voltage integrated Class-B amplifier for ultrasound transducers},
      booktitle = {IC Design Technology (ICICDT), 2013 International Conference on},
      year = {2013},
      pages = {105-108},
      month = {May},
      doi = {10.1109/ICICDT.2013.6563314},
      keywords = {BIMOS integrated circuits;UHF integrated circuits;UHF power amplifiers;feedback
      amplifiers;power integrated circuits;ultrasonic imaging;ultrasonic
      transducers;BCD technology;BCD-6 SOI;Watts level;apodization profiles;circuit
      analysis;feedback amplifier;frequency 5.5 MHz;gain 40.9 dB;high-voltage
      high-efficiency class-B output stage;high-voltage integrated class-B
      amplifier;high-voltage linear amplifiers;large-signal frequency response;power
      37 mW;quiescent power dissipation;signal amplitude;ultrasound imaging;ultrasound
      transducers;voltage 90 V;Capacitance;Capacitors;Frequency response;Harmonic
      analysis;Imaging;Impedance;Ultrasonic imaging;BCD technology;class-B;descriptive
      function;high-voltage ICs;linear amplifier;ultrasound},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Ghilioni, A. Mazzanti, and F. Svelto, “Analysis and Design of mm-Wave Frequency Dividers Based on Dynamic Latches With Load Modulation,” Solid-State Circuits, IEEE Journal of, vol. 48, iss. 8, pp. 1842-1850, 2013.
    [Bibtex]
    @ARTICLE{2013Ghilioni,
      author = {Ghilioni, A. and Mazzanti, A. and Svelto, F.},
      title = {Analysis and Design of mm-Wave Frequency Dividers Based on Dynamic
      Latches With Load Modulation},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2013},
      volume = {48},
      pages = {1842-1850},
      number = {8},
      month = {Aug},
      doi = {10.1109/JSSC.2013.2258793},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;flip-flops;frequency dividers;inspection;low-power
      electronics;time-domain analysis;bulk CMOS;date injection locked
      topologies;dynamic latches;hold times;load modulation;maximum charge
      retention;maximum operation frequency;minimum operation frequency;mm-wave
      frequency dividers;power 4.8 mW;size 32 nm;static CML latches;time-domain
      circuit inspection;transceivers;wideband low-power frequency dividers;Clocks;Frequency
      conversion;Frequency modulation;Latches;Resistance;Switches;Time-frequency
      analysis;CMOS technology;frequency divider;integrated circuits modeling;low
      power electronics;millimeter wave analog integrated circuits;wideband},
      timestamp = {2015.03.04}
    }
  • [DOI] E. Mammei, E. Monaco, A. Mazzanti, and F. Svelto, “A 33.6-to-46.2GHz 32nm CMOS VCO with 177.5dBc/Hz minimum noise FOM using inductor splitting for tuning extension,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International, 2013, pp. 350-351.
    [Bibtex]
    @INPROCEEDINGS{2013Mammei,
      author = {Mammei, E. and Monaco, E. and Mazzanti, A. and Svelto, F.},
      title = {A 33.6-to-46.2GHz 32nm CMOS VCO with 177.5dBc/Hz minimum noise FOM
      using inductor splitting for tuning extension},
      booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC),
      2013 IEEE International},
      year = {2013},
      pages = {350-351},
      month = {Feb},
      doi = {10.1109/ISSCC.2013.6487765},
      issn = {0193-6530},
      keywords = {CMOS integrated circuits;Q-factor;field effect MIMIC;inductors;millimetre
      wave oscillators;phase noise;voltage-controlled oscillators;CMOS
      VCO;MOM capacitors;RF thick metal;capacitor switched bank;equivalent
      tank inductance;frequency 33.6 GHz to 46.2 GHz;frequency 57 GHz to
      66 GHz;inductor splitting;low-noise on-chip oscillator;magnetic tuning
      methods;minimum noise FOM;parasitic capacitance;passive components;power
      9.8 mW;power dissipation;reduced quality factor;resonance frequencies;secondary
      coil impedance;signal integrity;signal processing;size 32 nm;size
      65 nm;stringent reference phase noise;switched-capacitor tank;transformer;transistor;tuning
      extension;ultrascaled CMOS technology node;ultrascaled standard digital
      CMOS technology;ultrawide tuning range;wireless transceivers;CMOS
      integrated circuits;Capacitors;Inductors;Phase noise;Switches;Tuning;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti and P. Andreani, “A Push-Pull Class-C CMOS VCO,” Solid-State Circuits, IEEE Journal of, vol. 48, iss. 3, pp. 724-732, 2013.
    [Bibtex]
    @ARTICLE{2013Mazzanti,
      author = {Mazzanti, A. and Andreani, P.},
      title = {A Push-Pull Class-C CMOS VCO},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2013},
      volume = {48},
      pages = {724-732},
      number = {3},
      month = {March},
      doi = {10.1109/JSSC.2012.2230542},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;MMIC oscillators;MOSFET;field effect MMIC;phase
      noise;triodes;voltage-controlled oscillators;CMOS oscillator;complementary
      topology;deep triode region;differential transistor;figure-of-merit;frequency
      6.09 GHz to 7.50 GHz;instantaneous resonator voltage;nMOS transistors;pMOS
      transistors;phase-noise performance;power 2.2 mW;push-pull class-C
      CMOS VCO;size 0.18 mum;voltage-controlled oscillator;MOSFETs;Phase
      noise;Voltage-controlled oscillators;CMOS;Class-C;phase noise;push–pull;voltage
      controlled oscillator (VCO)},
      timestamp = {2015.03.04}
    }
  • [DOI] F. Radice, M. Bruccoleri, M. Ganzerli, G. Spelgatti, D. Sanzogni, M. Pozzoni, and A. Mazzanti, “A 6-bit 6-GS/s 95mW background calibrated flash ADC with integrating preamplifiers and half-rate comparators in 32nm LP CMOS,” in ESSCIRC (ESSCIRC), 2013 Proceedings of the, 2013, pp. 129-132.
    [Bibtex]
    @INPROCEEDINGS{2013Radice,
      author = {Radice, F. and Bruccoleri, M. and Ganzerli, M. and Spelgatti, G.
      and Sanzogni, D. and Pozzoni, M. and Mazzanti, A.},
      title = {A 6-bit 6-GS/s 95mW background calibrated flash ADC with integrating
      preamplifiers and half-rate comparators in 32nm LP CMOS},
      booktitle = {ESSCIRC (ESSCIRC), 2013 Proceedings of the},
      year = {2013},
      pages = {129-132},
      month = {Sept},
      doi = {10.1109/ESSCIRC.2013.6649089},
      issn = {1930-8833},
      keywords = {CMOS integrated circuits;analogue-digital conversion;comparators (circuits);integrating
      circuits;low-power electronics;preamplifiers;Nyquist frequency input;SNDR
      degradation;background calibrated flash ADC;front-end offsets;gain-bandwidth
      requirements;half-rate comparators;integrating preamplifiers;low
      power CMOS technology;lower power dissipation;power 95 mW;single-stage
      integrators;size 32 nm;voltage 1 V;word length 6 bit;CMOS integrated
      circuits;CMOS technology;Calibration;Clocks;Power dissipation;Preamplifiers;Signal
      resolution},
      timestamp = {2015.03.04}
    }

2012

  • [DOI] D. Bianchi, F. Quaglia, A. Mazzanti, and F. Svelto, “A 90Vpp 720MHz GBW linear power amplifier for ultrasound imaging transmitters in BCD6-SOI,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International, 2012, pp. 370-372.
    [Bibtex]
    @INPROCEEDINGS{2012Bianchi,
      author = {Bianchi, D. and Quaglia, F. and Mazzanti, A. and Svelto, F.},
      title = {A 90Vpp 720MHz GBW linear power amplifier for ultrasound imaging
      transmitters in BCD6-SOI},
      booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC),
      2012 IEEE International},
      year = {2012},
      pages = {370-372},
      month = {Feb},
      doi = {10.1109/ISSCC.2012.6177054},
      issn = {0193-6530},
      keywords = {power amplifiers;ultrasonic imaging;BCD6-SOI;EM interference reduction;GBW
      linear power amplifier;apodization profiles;frequency 720 MHz;harmonic
      imaging;integrated amplifier topologies;pulse transmission technique;reliability
      improvement;transducer drivers;ultrasound imaging transmitters;waveform
      generators;Harmonic analysis;Harmonic distortion;Imaging;Impedance;Power
      amplifiers;Ultrasonic imaging;Voltage measurement},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Ghilioni, U. Decanis, A. Mazzanti, and F. Svelto, “A 4.8mW inductorless CMOS frequency divider-by-4 with more than 60% fractional bandwidth up to 70GHz,” in Custom Integrated Circuits Conference (CICC), 2012 IEEE, 2012, pp. 1-4.
    [Bibtex]
    @INPROCEEDINGS{2012Ghilioni,
      author = {Ghilioni, A. and Decanis, U. and Mazzanti, A. and Svelto, F.},
      title = {A 4.8mW inductorless CMOS frequency divider-by-4 with more than 60%
      fractional bandwidth up to 70GHz},
      booktitle = {Custom Integrated Circuits Conference (CICC), 2012 IEEE},
      year = {2012},
      pages = {1-4},
      month = {Sept},
      doi = {10.1109/CICC.2012.6330595},
      issn = {0886-5930},
      keywords = {CMOS integrated circuits;differential amplifiers;frequency dividers;frequency
      synthesizers;bandwidth 14 GHz to 70 GHz;clocked differential amplifiers;dynamic
      CML latches;fractional bandwidth;frequency synthesizers;inductorless
      CMOS frequency divider-by-4;large division factors;load resistance;power
      4.8 mW;size 32 nm;tail current;wide-band low-power dividers;Bandwidth;CMOS
      integrated circuits;Clocks;Frequency conversion;Latches;Power demand;Resistance;Frequency
      divider and CMOS technology;Low power electronics;Millimeter wave
      circuits;Wideband},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Ghilioni, E. Monaco, M. Repossi, and A. Mazzanti, “A 5mW CMOS wideband mm-wave front-end featuring 17dB of conversion gain and 6.5 dB minimum NF,” in Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE, 2012, pp. 447-450.
    [Bibtex]
    @INPROCEEDINGS{2012Ghilionia,
      author = {Ghilioni, A. and Monaco, E. and Repossi, M. and Mazzanti, A.},
      title = {A 5mW CMOS wideband mm-wave front-end featuring 17dB of conversion
      gain and 6.5 dB minimum NF},
      booktitle = {Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE},
      year = {2012},
      pages = {447-450},
      month = {June},
      doi = {10.1109/RFIC.2012.6242319},
      issn = {1529-2517},
      keywords = {CMOS analogue integrated circuits;MMIC amplifiers;field effect MMIC;low
      noise amplifiers;microwave resonators;CMOS stand-alone LNA;CMOS wideband
      mm-wave front-end;current to voltage conversion;frequency 18.5 GHz;front-end
      noise figure;gain 17 dB;intermediate frequency;low-noise amplifiers;mixer;mm-wave
      signal;noise figure 6.5 dB;passive components;phased arrays;power
      5 mW;power dissipation;quality factor;resonator impedance magnitude;size
      65 nm;test chips;wireless data transfers;CMOS integrated circuits;Gain;Mixers;Noise;Noise
      figure;Radio frequency;CMOS technology;Low-noise amplifiers;Millimeter
      wave integrated circuits;mixers;phased arrays},
      timestamp = {2015.03.04}
    }
  • [DOI] D. Li, G. Minoia, M. Repossi, D. Baldi, E. Temporiti, A. Mazzanti, and F. Svelto, “A 25Gb/s low noise 65nm CMOS receiver tailored to 100GBASE-LR4,” in ESSCIRC (ESSCIRC), 2012 Proceedings of the, 2012, pp. 221-224.
    [Bibtex]
    @INPROCEEDINGS{2012Li,
      author = {Dan Li and Minoia, G. and Repossi, M. and Baldi, D. and Temporiti,
      E. and Mazzanti, A. and Svelto, F.},
      title = {A 25Gb/s low noise 65nm CMOS receiver tailored to 100GBASE-LR4},
      booktitle = {ESSCIRC (ESSCIRC), 2012 Proceedings of the},
      year = {2012},
      pages = {221-224},
      month = {Sept},
      doi = {10.1109/ESSCIRC.2012.6341298},
      issn = {1930-8833},
      keywords = {CMOS integrated circuits;buffer circuits;equalisers;integrated circuit
      noise;mean square error methods;operational amplifiers;optical receivers;power
      consumption;bandwidth 10 GHz to 18.2 GHz;bit rate 25 Gbit/s;buffer;current
      2.44 muA;electrical analog bandwidth;equalizer;equivalent rms noise
      current;limiting amplifier;low noise CMOS receiver;low noise narrow-band
      TIA;noise power reduction;power 93 mW;power consumption;shunt-feedback;size
      65 nm;trade-off;two stage front-end;Bandwidth;CMOS integrated circuits;Equalizers;Noise;Optical
      fiber amplifiers;Radio frequency;Receivers},
      timestamp = {2015.03.04}
    }

2011

  • [DOI] U. Decanis, A. Ghilioni, E. Monaco, A. Mazzanti, and F. Svelto, “A Low-Noise Quadrature VCO Based on Magnetically Coupled Resonators and a Wideband Frequency Divider at Millimeter Waves,” Solid-State Circuits, IEEE Journal of, vol. 46, iss. 12, pp. 2943-2955, 2011.
    [Bibtex]
    @ARTICLE{2011Decanis,
      author = {Decanis, U. and Ghilioni, A. and Monaco, E. and Mazzanti, A. and
      Svelto, F.},
      title = {A Low-Noise Quadrature VCO Based on Magnetically Coupled Resonators
      and a Wideband Frequency Divider at Millimeter Waves},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2011},
      volume = {46},
      pages = {2943-2955},
      number = {12},
      month = {Dec},
      doi = {10.1109/JSSC.2011.2162468},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;differential amplifiers;field effect MIMIC;frequency
      dividers;millimetre wave frequency convertors;millimetre wave oscillators;phase
      noise;voltage-controlled oscillators;CMOS process;MIMIC;clocked differential
      amplifiers;current 22 mA;frequency 56 GHz to 60.4 GHz;inter-stage
      passive components;low-noise quadrature VCO;magnetically coupled
      resonators;phase error;phase noise;phased-array systems;power 6.5
      mW;size 65 nm;voltage 1 V;wideband frequency divider;wireless on-chip
      processing;Couplings;Frequency conversion;Phase noise;Resonant frequency;Voltage-controlled
      oscillators;CMOS;direct conversion;frequency divider;low phase noise;low-$k$
      transformer;millimeter wave;quadrature voltage-controlled oscillator
      (VCO)},
      timestamp = {2015.03.04}
    }
  • [DOI] U. Decanis, A. Ghilioni, E. Monaco, A. Mazzanti, and F. Svelto, “A mm-Wave quadrature VCO based on magnetically coupled resonators,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International, 2011, pp. 280-282.
    [Bibtex]
    @INPROCEEDINGS{2011Decanisa,
      author = {Decanis, U. and Ghilioni, A. and Monaco, E. and Mazzanti, A. and
      Svelto, F.},
      title = {A mm-Wave quadrature VCO based on magnetically coupled resonators},
      booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC),
      2011 IEEE International},
      year = {2011},
      pages = {280-282},
      month = {Feb},
      doi = {10.1109/ISSCC.2011.5746318},
      issn = {0193-6530},
      keywords = {1/f noise;CMOS integrated circuits;resonators;voltage-controlled oscillators;1/f
      noise;CMOS technology;compact quadrature generator;cross-coupled
      LC voltage-controlled oscillator;current 22 mA;dividers;double-frequency
      VCO;frequency 1 MHz;frequency 56 GHz to 60.3 GHz;magnetically coupled
      resonator;mm-wave quadrature VCO;size 65 nm;voltage 1 V;CMOS integrated
      circuits;Phase noise;Resonant frequency;Solid state circuits;Tuning;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Ghilioni, U. Decanis, E. Monaco, A. Mazzanti, and F. Svelto, “A 6.5mW inductorless CMOS frequency divider-by-4 operating up to 70GHz,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International, 2011, pp. 282-284.
    [Bibtex]
    @INPROCEEDINGS{2011Ghilioni,
      author = {Ghilioni, A. and Decanis, U. and Monaco, E. and Mazzanti, A. and
      Svelto, F.},
      title = {A 6.5mW inductorless CMOS frequency divider-by-4 operating up to
      70GHz},
      booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC),
      2011 IEEE International},
      year = {2011},
      pages = {282-284},
      month = {Feb},
      doi = {10.1109/ISSCC.2011.5746319},
      issn = {0193-6530},
      keywords = {CMOS integrated circuits;current-mode logic;differential amplifiers;field
      effect MIMIC;flip-flops;frequency dividers;injection locked oscillators;integrated
      circuit interconnections;optical communication;radio transceivers;synchronisation;clock
      synchronization;clocked differential amplifiers;digital calibration;inductorless
      CMOS frequency divider;injection locking;injection-locked oscillators;integrated
      circuit interconnections;mm-wave dividers;nanometer-scale CMOS technology;optical
      communications;power 6.5 mW;radio frequency application;size 65 nm;static
      CML latches;wireless transceivers;CMOS integrated circuits;Capacitors;Clocks;Frequency
      conversion;Latches;Noise measurement;Time frequency analysis},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, M. Sosio, M. Repossi, and F. Svelto, “A 24 GHz Subharmonic Direct Conversion Receiver in 65 nm CMOS,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 58, iss. 1, pp. 88-97, 2011.
    [Bibtex]
    @ARTICLE{2011Mazzanti,
      author = {Mazzanti, A. and Sosio, M. and Repossi, M. and Svelto, F.},
      title = {A 24 GHz Subharmonic Direct Conversion Receiver in 65 nm CMOS},
      journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on},
      year = {2011},
      volume = {58},
      pages = {88-97},
      number = {1},
      month = {Jan},
      doi = {10.1109/TCSI.2010.2071711},
      issn = {1549-8328},
      keywords = {CMOS integrated circuits;low-power electronics;microwave switches;millimetre
      wave oscillators;millimetre wave receivers;transceivers;forward signal
      paths;frequency 24 GHz;gain;gain 30.5 dB;gain 6.7 dB;half frequency
      operation;integrated LNA matching network;local oscillator;microwaves;millimeter
      waves;optimum biasing;phased array systems;power 78 mW;power consumption;return
      signal paths;scaled CMOS;sensitivity;single-ended topology;stacked
      switches;subharmonic direct conversion receiver;subharmonic down-conversion;transceiver
      IC;transceivers;transresistance amplifier;CMOS integrated circuits;Capacitors;Impedance
      matching;Inductors;Mixers;Noise;Receivers;CMOS;LNA;integrated circuits;millimeter
      waves;receivers;subharmonic mixers},
      timestamp = {2015.03.04}
    }
  • [DOI] F. Vecchi, S. Bozzola, E. Temporiti, D. Guermandi, M. Pozzoni, M. Repossi, M. Cusmai, U. Decanis, A. Mazzanti, and F. Svelto, “A Wideband Receiver for Multi-Gbit/s Communications in 65 nm CMOS,” Solid-State Circuits, IEEE Journal of, vol. 46, iss. 3, pp. 551-561, 2011.
    [Bibtex]
    @ARTICLE{2011Vecchi,
      author = {Vecchi, F. and Bozzola, S. and Temporiti, E. and Guermandi, D. and
      Pozzoni, M. and Repossi, M. and Cusmai, M. and Decanis, U. and Mazzanti,
      A. and Svelto, F.},
      title = {A Wideband Receiver for Multi-Gbit/s Communications in 65 nm CMOS},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2011},
      volume = {46},
      pages = {551-561},
      number = {3},
      month = {March},
      doi = {10.1109/JSSC.2010.2100251},
      issn = {0018-9200},
      keywords = {CMOS analogue integrated circuits;MMIC amplifiers;MMIC oscillators;low-power
      electronics;microwave filters;phase detectors;radio links;radio transceivers;voltage-controlled
      oscillators;wideband amplifiers;analog fractional bandwidths;charge
      pump combination;classical LC loaded stages bandwidth;filter components
      integrated phase noise;frequency reference generator;high-rate communications
      technology;in-band gain ripple;integer-N type-II synthesizer;interstage
      coupling;linear processing chain;low power wide range divider chain;noise
      figure 6.5 dB;power 84 mW;signal constellation integrity;size 65
      nm;sliding IF architecture;state phase frequency detector;switched
      tuned LC VCO;transceiver;wideband amplifiers;wideband receiver;wireless
      links;Bandwidth;Capacitors;Couplings;Gain;Mixers;Noise;Synthesizers;CMOS;coupled
      resonators;dividers;integrated noise;low noise amplifiers;millimeter
      wave receiver;mixer;mm-wave;synthesizer;wideband},
      timestamp = {2015.03.04}
    }

2010

  • [DOI] F. Gianaroli, A. Barbieri, F. Pancaldi, A. Mazzanti, and G. M. Vitetta, “A Novel Approach to Power-Line Channel Modeling,” Power Delivery, IEEE Transactions on, vol. 25, iss. 1, pp. 132-140, 2010.
    [Bibtex]
    @ARTICLE{2010Gianaroli,
      author = {Gianaroli, F. and Barbieri, A. and Pancaldi, F. and Mazzanti, A.
      and Vitetta, G.M.},
      title = {A Novel Approach to Power-Line Channel Modeling},
      journal = {Power Delivery, IEEE Transactions on},
      year = {2010},
      volume = {25},
      pages = {132-140},
      number = {1},
      month = {Jan},
      doi = {10.1109/TPWRD.2009.2035283},
      issn = {0885-8977},
      keywords = {Monte Carlo methods;carrier transmission on power lines;indoor communication;telecommunication
      network topology;Monte Carlo method;bifilar model;frequency 1 MHz
      to 30 MHz;low voltage indoor power networks;network topology;power
      line channel modeling;statistical modeling;Multipath channel;power-line
      communications;statistical channel model},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, E. Monaco, M. Pozzoni, and F. Svelto, “A 13.1% tuning range 115GHz frequency generator based on an injection-locked frequency doubler in 65nm CMOS,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International, 2010, pp. 422-423.
    [Bibtex]
    @INPROCEEDINGS{2010Mazzanti,
      author = {Mazzanti, A. and Monaco, E. and Pozzoni, M. and Svelto, F.},
      title = {A 13.1% tuning range 115GHz frequency generator based on an injection-locked
      frequency doubler in 65nm CMOS},
      booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC),
      2010 IEEE International},
      year = {2010},
      pages = {422-423},
      month = {Feb},
      doi = {10.1109/ISSCC.2010.5433869},
      issn = {0193-6530},
      keywords = {CMOS analogue integrated circuits;field effect MIMIC;frequency multipliers;injection
      locked oscillators;low-power electronics;millimetre wave oscillators;phase
      noise;voltage-controlled oscillators;CMOS frequency multiplier;frequency
      115 GHz;frequency generator;half-frequency VCO;injection-locked Pierce
      oscillator;injection-locked frequency doubler;phase noise;power 12
      mW;power dissipation;size 65 nm;stand-alone push-push multipliers;CMOS
      technology;Capacitors;Circuits;Frequency;Injection-locked oscillators;Phase
      noise;Semiconductor device measurement;Tuning;Voltage;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, M. B. Vahidfar, M. Sosio, and F. Svelto, “A Low Phase-Noise Multi-Phase LO Generator for Wideband Demodulators Based on Reconfigurable Sub-Harmonic Mixers,” Solid-State Circuits, IEEE Journal of, vol. 45, iss. 10, pp. 2104-2115, 2010.
    [Bibtex]
    @ARTICLE{2010Mazzantia,
      author = {Mazzanti, A. and Vahidfar, M.B. and Sosio, M. and Svelto, F.},
      title = {A Low Phase-Noise Multi-Phase LO Generator for Wideband Demodulators
      Based on Reconfigurable Sub-Harmonic Mixers},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2010},
      volume = {45},
      pages = {2104-2115},
      number = {10},
      month = {Oct},
      doi = {10.1109/JSSC.2010.2060258},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;cellular radio;demodulators;frequency synthesizers;mixers
      (circuits);network topology;oscillators;ultra wideband communication;wireless
      LAN;UWB technology;WiMedia UWB groups;circuit topologies;cognitive
      radios;frequency 10 MHz;frequency 3.1 GHz to 9.5 GHz;frequency synthesizer;harmonic
      operation modes;low phase-noise multiphase LO generator;multistage
      injection locked ring oscillator;reconfigurable subharmonic mixers;software
      defined radios;transceiver architectures;wideband CMOS receivers;wideband
      demodulators;Demodulation;Mixers;Phase locked loops;Phase noise;Ring
      oscillators;Tuning;Wideband;Fast hopping synthesizer;UWB;injection
      locking;multi phase local oscillator;phase noise;ring oscillator;sub-harmonic
      mixers;ultra wide band},
      timestamp = {2015.03.04}
    }
  • [DOI] E. Monaco, M. Pozzoni, F. Svelto, and A. Mazzanti, “Injection-Locked CMOS Frequency Doublers for \mu -Wave and mm-Wave Applications,” Solid-State Circuits, IEEE Journal of, vol. 45, iss. 8, pp. 1565-1574, 2010.
    [Bibtex]
    @ARTICLE{2010Monaco,
      author = {Monaco, E. and Pozzoni, M. and Svelto, F. and Mazzanti, A.},
      title = {Injection-Locked CMOS Frequency Doublers for \mu -Wave and mm-Wave
      Applications},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2010},
      volume = {45},
      pages = {1565-1574},
      number = {8},
      month = {Aug},
      doi = {10.1109/JSSC.2010.2049780},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;frequency multipliers;millimetre wave integrated
      circuits;millimetre wave oscillators;voltage-controlled oscillators;μ-wave
      applications;F-band multiplier;Ku-band multiplier;autonomous differential
      oscillator;bandwidth 106 GHz to 128 GHz;bandwidth 11 GHz to 15 GHz;double
      frequency tone locking;frequency tuning range;half-frequency standard
      LC-tank VCO;injection-locked CMOS frequency doublers;key passive
      components;mm-wave applications;on-chip frequency generators;power
      5.2 mW;power 6 mW;signal spectral purity;size 0.13 mum;size 65 nm;variable
      capacitors;voltage 330 mV;voltage 470 mV;voltage-controlled oscillators
      running;Bandwidth;CMOS technology;Capacitors;Degradation;Displays;Frequency;Signal
      design;Tuning;Voltage;Voltage-controlled oscillators;Frequency doubler;frequency
      multiplier;injection locking;microwaves;millimeter waves;mmw;push-push},
      timestamp = {2015.03.04}
    }
  • [DOI] E. Monaco, M. Pozzoni, F. Svelto, and A. Mazzanti, “A 6mW, 115GHz CMOS injection-locked frequency doubler with differential output,” in IC Design and Technology (ICICDT), 2010 IEEE International Conference on, 2010, pp. 236-239.
    [Bibtex]
    @INPROCEEDINGS{2010Monacoa,
      author = {Monaco, E. and Pozzoni, M. and Svelto, F. and Mazzanti, A.},
      title = {A 6mW, 115GHz CMOS injection-locked frequency doubler with differential
      output},
      booktitle = {IC Design and Technology (ICICDT), 2010 IEEE International Conference
      on},
      year = {2010},
      pages = {236-239},
      month = {June},
      doi = {10.1109/ICICDT.2010.5510246},
      keywords = {CMOS integrated circuits;MIMIC;frequency multipliers;oscillators;CMOS
      injection-locked frequency doubler;Pierce oscillator;active devices;closed
      form expression;differential output;frequency 115 GHz;frequency locking
      range;frequency multipliers;millimeter-wave CMOS frequency multiplier;power
      6 mW;push-push pair;Bandwidth;CMOS technology;Frequency;Injection-locked
      oscillators;Millimeter wave circuits;Millimeter wave technology;Power
      dissipation;Power system harmonics;Prototypes;Semiconductor device
      modeling},
      timestamp = {2015.03.04}
    }
  • [DOI] F. Vecchi, S. Bozzola, M. Pozzoni, D. Guermandi, E. Temporiti, M. Repossi, U. Decanis, A. Mazzanti, and F. Svelto, “A 60GHz receiver with 13GHz bandwidth for Gbit/s wireless links in 65nm CMOS,” in IC Design and Technology (ICICDT), 2010 IEEE International Conference on, 2010, pp. 228-231.
    [Bibtex]
    @INPROCEEDINGS{2010Vecchi,
      author = {Vecchi, F. and Bozzola, S. and Pozzoni, M. and Guermandi, D. and
      Temporiti, E. and Repossi, M. and Decanis, U. and Mazzanti, A. and
      Svelto, F.},
      title = {A 60GHz receiver with 13GHz bandwidth for Gbit/s wireless links in
      65nm CMOS},
      booktitle = {IC Design and Technology (ICICDT), 2010 IEEE International Conference
      on},
      year = {2010},
      pages = {228-231},
      month = {June},
      doi = {10.1109/ICICDT.2010.5510248},
      keywords = {CMOS integrated circuits;low noise amplifiers;millimetre waves;mixers
      (circuits);phase noise;voltage-controlled oscillators;CMOS;LNA gain;RF
      mixer;VCO;bandwidth 13 GHz;frequency 10 MHz;frequency 60 GHz;gain
      35 dB;local oscillator;low-noise amplifier;mm-waves;phase noise;power
      75 mW;quadrature IF mixer;size 65 nm;sliding IF architecture;wireless
      link;Bandwidth;Frequency conversion;Gain;Local oscillators;Phase
      noise;Power dissipation;RF signals;Radio frequency;Voltage-controlled
      oscillators;Wideband},
      timestamp = {2015.03.04}
    }
  • [DOI] F. Vecchi, S. Bozzola, M. Pozzoni, D. Guermandi, E. Temporiti, M. Repossi, U. Decanis, A. Mazzanti, and F. Svelto, “A wideband mm-Wave CMOS receiver for Gb/s communications employing interstage coupled resonators,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International, 2010, pp. 220-221.
    [Bibtex]
    @INPROCEEDINGS{2010Vecchia,
      author = {Vecchi, F. and Bozzola, S. and Pozzoni, M. and Guermandi, D. and
      Temporiti, E. and Repossi, M. and Decanis, U. and Mazzanti, A. and
      Svelto, F.},
      title = {A wideband mm-Wave CMOS receiver for Gb/s communications employing
      interstage coupled resonators},
      booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC),
      2010 IEEE International},
      year = {2010},
      pages = {220-221},
      month = {Feb},
      doi = {10.1109/ISSCC.2010.5433953},
      issn = {0193-6530},
      keywords = {low noise amplifiers;millimetre wave receivers;mixers (circuits);transceivers;voltage-controlled
      oscillators;LNA gain stages;RF mixer;VCO;dividers;interstage coupled
      resonators;power 75 mW;quadrature IF mixers;size 65 nm;wideband mm-wave
      CMOS receiver;Bandwidth;Capacitors;Inductors;Noise measurement;Phase
      noise;Radio frequency;Transconductors;Tuning;Voltage-controlled oscillators;Wideband},
      timestamp = {2015.03.04}
    }

2009

  • [DOI] M. Borgarino, A. Polemi, and A. Mazzanti, “Low-Cost Integrated Microwave Radiometer Front-End for Industrial Applications,” Microwave Theory and Techniques, IEEE Transactions on, vol. 57, iss. 12, pp. 3011-3018, 2009.
    [Bibtex]
    @ARTICLE{2009Borgarino,
      author = {Borgarino, M. and Polemi, Alessia and Mazzanti, A.},
      title = {Low-Cost Integrated Microwave Radiometer Front-End for Industrial
      Applications},
      journal = {Microwave Theory and Techniques, IEEE Transactions on},
      year = {2009},
      volume = {57},
      pages = {3011-3018},
      number = {12},
      month = {Dec},
      doi = {10.1109/TMTT.2009.2034209},
      issn = {0018-9480},
      keywords = {BiCMOS integrated circuits;Ge-Si alloys;microstrip antennas;microwave
      integrated circuits;radiometers;radiometry;BiCMOS technology;X-band;analog
      continuous-wave characterizations;antenna;benchmark experiment;electronic
      receiver;industrial applications;low-cost integrated microwave radiometer
      front-end;microstrip technology;radiometer test;size 0.35 mum;Fire
      detection;RF integrated circuit (RFIC);SiGe;microwave radiometer;printed
      array},
      timestamp = {2015.03.04}
    }
  • [DOI] S. Bozzola, D. Guermandi, F. Vecchi, M. Repossi, M. Pozzoni, A. Mazzanti, and F. Svelto, “A sliding IF receiver for mm-wave WLANs in 65nm CMOS,” in Custom Integrated Circuits Conference, 2009. CICC ’09. IEEE, 2009, pp. 669-672.
    [Bibtex]
    @INPROCEEDINGS{2009Bozzola,
      author = {Bozzola, S. and Guermandi, D. and Vecchi, F. and Repossi, M. and
      Pozzoni, M. and Mazzanti, A. and Svelto, F.},
      title = {A sliding IF receiver for mm-wave WLANs in 65nm CMOS},
      booktitle = {Custom Integrated Circuits Conference, 2009. CICC '09. IEEE},
      year = {2009},
      pages = {669-672},
      month = {Sept},
      doi = {10.1109/CICC.2009.5280754},
      keywords = {CMOS integrated circuits;receivers;CMOS;phase noise;power consumption;quadrature
      IF mixers;sliding IF receiver;Energy consumption;Gain measurement;Local
      oscillators;Noise measurement;Performance evaluation;Phase noise;Prototypes;Radio
      frequency;Tuning;Voltage-controlled oscillators;60 GHz receivers;mm-wave
      CMOS;sliding-IF architecture},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti and P. Andreani, “A Time-Variant Analysis of Fundamental 1/f^3 Phase Noise in CMOS Parallel LC -Tank Quadrature Oscillators,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 56, iss. 10, pp. 2173-2180, 2009.
    [Bibtex]
    @ARTICLE{2009Mazzanti,
      author = {Mazzanti, A. and Andreani, P.},
      title = {A Time-Variant Analysis of Fundamental 1/f^3 Phase Noise in CMOS
      Parallel LC -Tank Quadrature Oscillators},
      journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on},
      year = {2009},
      volume = {56},
      pages = {2173-2180},
      number = {10},
      month = {Oct},
      doi = {10.1109/TCSI.2009.2015214},
      issn = {1549-8328},
      keywords = {1/f noise;CMOS integrated circuits;MOSFET;harmonic oscillators (circuits);phase
      noise;radiofrequency oscillators;semiconductor device noise;1/f MOS
      device noise upconversion;CMOS parallel LC-tank quadrature oscillator;SpectreRF
      simulations;fundamental 1/f3 phase noise spectrum;low-frequency noise
      source;parallel-coupled quadrature CMOS harmonic oscillator;time-variant
      analysis;CMOS RFICs;flicker noise;impulse sensitivity function (ISF);phase
      noise;quadrature oscillator},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, M. B. Vahidfar, M. Sosio, and F. Svelto, “A reconfigurable demodulator with 3-to-5GHz agile synthesizer for 9-band WiMedia UWB in 65nm CMOS,” in Solid-State Circuits Conference – Digest of Technical Papers, 2009. ISSCC 2009. IEEE International, 2009, p. 412-413,413a.
    [Bibtex]
    @INPROCEEDINGS{2009Mazzantia,
      author = {Mazzanti, A. and Vahidfar, M.B. and Sosio, M. and Svelto, F.},
      title = {A reconfigurable demodulator with 3-to-5GHz agile synthesizer for
      9-band WiMedia UWB in 65nm CMOS},
      booktitle = {Solid-State Circuits Conference - Digest of Technical Papers, 2009.
      ISSCC 2009. IEEE International},
      year = {2009},
      pages = {412-413,413a},
      month = {Feb},
      doi = {10.1109/ISSCC.2009.4977483},
      keywords = {CMOS integrated circuits;MMIC;demodulators;frequency synthesizers;ultra
      wideband technology;CMOS reconfigurable direct-conversion receiver;WiMedia
      UWB synthesizer;frequency 3 GHz to 5 GHz;frequency synthesizer;power
      43 mW;reconfigurable demodulator;size 65 nm;Circuits;Demodulation;Noise
      measurement;Packaging;Physical layer;Power generation;Radio frequency;Synthesizers;Voltage;Wideband},
      timestamp = {2015.03.04}
    }
  • [DOI] E. Monaco, M. Borgarino, F. Svelto, and A. Mazzanti, “A 5.2mW ku-band CMOS injection-locked frequency doubler with differential input / output,” in Custom Integrated Circuits Conference, 2009. CICC ’09. IEEE, 2009, pp. 61-64.
    [Bibtex]
    @INPROCEEDINGS{2009Monaco,
      author = {Monaco, E. and Borgarino, M. and Svelto, F. and Mazzanti, A.},
      title = {A 5.2mW ku-band CMOS injection-locked frequency doubler with differential
      input / output},
      booktitle = {Custom Integrated Circuits Conference, 2009. CICC '09. IEEE},
      year = {2009},
      pages = {61-64},
      month = {Sept},
      doi = {10.1109/CICC.2009.5280886},
      keywords = {CMOS integrated circuits;MMIC frequency convertors;field effect MMIC;frequency
      multipliers;network topology;CMOS injection-locked frequency doubler;LC
      oscillator;MMIC frequency convertors;circuit topology;differential
      pair;frequency multipliers;locking range;power 5.2 mW;CMOS technology;Character
      generation;Circuit topology;Equations;Frequency;Oscillators;Power
      dissipation;Prototypes;Semiconductor device modeling;Signal generators},
      timestamp = {2015.03.04}
    }
  • M. Sosio, A. Mazzanti, M. Repossi, and F. Svelto, “A low-power ka-band direct conversion receiver employing half-frequency local oscillator in 65nm CMOS,” in Microwave Conference, 2009. EuMC 2009. European, 2009, pp. 256-259.
    [Bibtex]
    @INPROCEEDINGS{2009Sosio,
      author = {Sosio, M. and Mazzanti, A. and Repossi, M. and Svelto, F.},
      title = {A low-power ka-band direct conversion receiver employing half-frequency
      local oscillator in 65nm CMOS},
      booktitle = {Microwave Conference, 2009. EuMC 2009. European},
      year = {2009},
      pages = {256-259},
      month = {Sept},
      keywords = {CMOS integrated circuits;millimetre wave mixers;millimetre wave receivers;oscillators;CMOS
      technology;Ka band direct conversion receiver;complementary metal-oxide-semiconductor;frequency
      tuning;gain 31.5 dB;half-frequency local oscillator;noise figure
      6.7 dB;power 78 mW;power dissipation;power silicon receivers;quadrature
      subharmonic mixers;size 65 nm;CMOS integrated circuits;CMOS technology;Frequency
      conversion;Frequency synthesizers;Integrated circuit noise;Local
      oscillators;Millimeter wave technology;Mixers;Silicon;Tuning},
      timestamp = {2015.03.04}
    }

2008

  • [DOI] S. Bozzola, D. Guermandi, A. Mazzanti, and F. Svelto, “An 11.5% frequency tuning, -184 dBc/Hz noise FOM 54 GHz VCO,” in Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, 2008, pp. 657-660.
    [Bibtex]
    @INPROCEEDINGS{2008Bozzola,
      author = {Bozzola, S. and Guermandi, D. and Mazzanti, A. and Svelto, F.},
      title = {An 11.5% frequency tuning, -184 dBc/Hz noise FOM 54 GHz VCO},
      booktitle = {Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE},
      year = {2008},
      pages = {657-660},
      month = {June},
      doi = {10.1109/RFIC.2008.4561523},
      issn = {1529-2517},
      keywords = {MOS capacitors;millimetre wave oscillators;varactors;voltage-controlled
      oscillators;FOM;VCO;analog tuning;digital tuning;efficiency 11.5
      percent;frequency 54 GHz;inversion mode MOS;optimize capacitance
      tuning range;power 7.2 mW;size 65 nm;varactor;Capacitance;Frequency
      measurement;Inductors;Noise measurement;Noise robustness;Prototypes;Spirals;Tuning;Varactors;Voltage-controlled
      oscillators;I-MOS varactor;Voltage controlled oscillator;mm-wave},
      timestamp = {2015.03.04}
    }
  • [DOI] R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, “A 30.5 dBm 48% PAE CMOS Class-E PA With Integrated Balun for RF Applications,” Solid-State Circuits, IEEE Journal of, vol. 43, iss. 8, pp. 1755-1762, 2008.
    [Bibtex]
    @ARTICLE{2008Brama,
      author = {Brama, R. and Larcher, L. and Mazzanti, A. and Svelto, F.},
      title = {A 30.5 dBm 48% PAE CMOS Class-E PA With Integrated Balun for RF Applications},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2008},
      volume = {43},
      pages = {1755-1762},
      number = {8},
      month = {Aug},
      doi = {10.1109/JSSC.2008.925605},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;UHF integrated circuits;UHF power amplifiers;baluns;signal
      processing;CMOS class-E power amplifiers;UHF power amplifiers;differential
      cascode topology;frequency 1.6 GHz;frequency 1.7 GHz;integrated baluns;power
      efficiency;signal processing;size 0.13 mum;switching amplifiers;thermal
      dissipation;CMOS technology;Impedance matching;Narrowband;Power amplifiers;Power
      generation;Radio frequency;Radiofrequency amplifiers;Signal processing;Topology;Transmitters;Baluns;CMOS
      power amplifiers;class-E;radio-frequency (RF) circuits;switching
      amplifiers;wireless communications},
      timestamp = {2015.03.04}
    }
  • [DOI] F. Ducati, A. Mazzanti, M. Borgarino, and M. Pifferi, “SiGe BiCMOS X-Band integrated radiometer,” in Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on, 2008, pp. 1257-1260.
    [Bibtex]
    @INPROCEEDINGS{2008Ducati,
      author = {Ducati, F. and Mazzanti, A. and Borgarino, M. and Pifferi, M.},
      title = {SiGe BiCMOS X-Band integrated radiometer},
      booktitle = {Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International
      Conference on},
      year = {2008},
      pages = {1257-1260},
      month = {Aug},
      doi = {10.1109/ICECS.2008.4675088},
      keywords = {BiCMOS integrated circuits;Ge-Si alloys;MMIC;radiometers;semiconductor
      materials;BiCMOS x-band integrated radiometer;SiGe;frequency 8 GHz
      to 10 GHz;monolithic RF front-end;power 0.5 W;size 0.35 mum;BiCMOS
      integrated circuits;Costs;Fabrication;Germanium silicon alloys;Paper
      technology;Prototypes;Radio frequency;Radiometry;Silicon germanium;Testing},
      timestamp = {2015.03.04}
    }
  • [DOI] L. Lu, Z. Tang, P. Andreani, A. Mazzanti, and A. Hajimiri, “Comments on "Comments on "A General Theory of Phase Noise in Electrical Oscillators " ",” Solid-State Circuits, IEEE Journal of, vol. 43, iss. 9, pp. 2170-2170, 2008.
    [Bibtex]
    @ARTICLE{2008Lu,
      author = {Lei Lu and Zhangwen Tang and Andreani, P. and Mazzanti, A. and Hajimiri,
      A.},
      title = {Comments on "Comments on "A General Theory of Phase Noise in Electrical
      Oscillators " "},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2008},
      volume = {43},
      pages = {2170-2170},
      number = {9},
      month = {Sept},
      doi = {10.1109/JSSC.2008.2005028},
      issn = {0018-9200},
      keywords = {frequency-domain analysis;oscillators;phase noise;sensitivity analysis;frequency-domain
      analysis;general electrical oscillators;impulse sensitivity function;phase
      noise;Application specific integrated circuits;Equations;Fourier
      series;Frequency domain analysis;Noise generators;Oscillators;Phase
      noise;Power generation;Solid state circuits;White noise;Impulse sensitivity
      function (ISF);oscillators;phase noise},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti and P. Andreani, “Class-C Harmonic CMOS VCOs, With a General Result on Phase Noise,” Solid-State Circuits, IEEE Journal of, vol. 43, iss. 12, pp. 2716-2729, 2008.
    [Bibtex]
    @ARTICLE{2008Mazzanti,
      author = {Mazzanti, A. and Andreani, P.},
      title = {Class-C Harmonic CMOS VCOs, With a General Result on Phase Noise},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2008},
      volume = {43},
      pages = {2716-2729},
      number = {12},
      month = {Dec},
      doi = {10.1109/JSSC.2008.2004867},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;network analysis;phase noise;voltage-controlled
      oscillators;class-C harmonic CMOS VCO;current consumption;differential-pair
      LC-tank oscillator;harmonic oscillator topology;oscillation amplitude;parasitic
      nodes;phase noise;phase-noise equations;rigorous time-variant circuit
      analysis;stray capacitances;tail bias current noise;time-variant
      study;Circuit analysis;Circuit noise;Circuit stability;Equations;Oscillators;Parasitic
      capacitance;Phase noise;Stability analysis;Tail;Topology;Amplitude
      stability;class-C;impulse sensitivity function;phase noise;radio
      frequency integrated circuits;squegging;voltage controlled oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti and P. Andreani, “A 1.4mW 4.90-to-5.65GHz Class-C CMOS VCO with an Average FoM of 194.5dBc/Hz,” in Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International, 2008, pp. 474-629.
    [Bibtex]
    @INPROCEEDINGS{2008Mazzantia,
      author = {Mazzanti, A. and Andreani, P.},
      title = {A 1.4mW 4.90-to-5.65GHz Class-C CMOS VCO with an Average FoM of 194.5dBc/Hz},
      booktitle = {Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical
      Papers. IEEE International},
      year = {2008},
      pages = {474-629},
      month = {Feb},
      doi = {10.1109/ISSCC.2008.4523263},
      keywords = {CMOS integrated circuits;microwave oscillators;network topology;phase
      noise;voltage-controlled oscillators;FoM;LC-tank oscillator;class-C
      CMOS VCO;differential CMOS Colpitts oscillator;frequency 4.90 GHz
      to 5.65 GHz;phase-noise properties;power 1.4 mW;singled-ended topology;Frequency;MOS
      devices;MOSFETs;Noise level;Phase noise;Solid state circuits;Switches;Tail;Tuning;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, E. Sacchi, P. Andreani, and F. Svelto, “Analysis and Design of a Double-Quadrature CMOS VCO for Subharmonic Mixing at Ka-Band,” Microwave Theory and Techniques, IEEE Transactions on, vol. 56, iss. 2, pp. 355-363, 2008.
    [Bibtex]
    @ARTICLE{2008Mazzantib,
      author = {Mazzanti, A. and Sacchi, E. and Andreani, P. and Svelto, F.},
      title = {Analysis and Design of a Double-Quadrature CMOS VCO for Subharmonic
      Mixing at Ka-Band},
      journal = {Microwave Theory and Techniques, IEEE Transactions on},
      year = {2008},
      volume = {56},
      pages = {355-363},
      number = {2},
      month = {Feb},
      doi = {10.1109/TMTT.2007.914365},
      issn = {0018-9480},
      keywords = {CMOS integrated circuits;circuit tuning;microwave mixers;microwave
      oscillators;phase noise;varactors;voltage-controlled oscillators;Ka-band
      signal processing;current 18 mA;double-quadrature CMOS VCO;four-phase
      oscillator display;frequency 12 GHz to 15.9 GHz;phase noise;size
      65 nm;subharmonic mixing;time-variant analysis;tuning varactor;voltage
      0.8 V;voltage controlled oscillator;CMOS process;Circuit optimization;Displays;Frequency;Noise
      measurement;Phase noise;Q factor;Signal analysis;Signal processing;Voltage-controlled
      oscillators;CMOS;direct conversion;local oscillator (LO) generation;millimeter
      waves;multiphase;phase noise;subharmonic receivers;voltage-controlled
      oscillator (VCO)},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, M. Sosio, M. Repossi, and F. Svelto, “A 24GHz Sub-Harmonic Receiver Front-End with Integrated Multi-Phase LO Generation in 65nm CMOS,” in Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International, 2008, pp. 216-608.
    [Bibtex]
    @INPROCEEDINGS{2008Mazzantic,
      author = {Mazzanti, A. and Sosio, M. and Repossi, M. and Svelto, F.},
      title = {A 24GHz Sub-Harmonic Receiver Front-End with Integrated Multi-Phase
      LO Generation in 65nm CMOS},
      booktitle = {Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical
      Papers. IEEE International},
      year = {2008},
      pages = {216-608},
      month = {Feb},
      doi = {10.1109/ISSCC.2008.4523134},
      keywords = {CMOS integrated circuits;low-power electronics;microwave generation;microwave
      receivers;radio receivers;voltage-controlled oscillators;VCO;direct-conversion
      I/Q-receiver front-end;frequency 24 GHz;integrated multiphase LO
      generation;low-power solution;size 65 nm;subharmonic receiver;ultrascaled
      RF CMOS process;Baseband;Capacitors;Frequency conversion;Frequency
      synthesizers;Mixers;Phase noise;Radio frequency;Radiofrequency amplifiers;Transconductors;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] F. Vecchi, M. Repossi, A. Mazzanti, P. Arcioni, and F. Svelto, “A simple and complete circuit model for the coupling between symmetrical spiral inductors in silicon RF-ICs,” in Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, 2008, pp. 479-482.
    [Bibtex]
    @INPROCEEDINGS{2008Vecchi,
      author = {Vecchi, F. and Repossi, M. and Mazzanti, A. and Arcioni, P. and Svelto,
      F.},
      title = {A simple and complete circuit model for the coupling between symmetrical
      spiral inductors in silicon RF-ICs},
      booktitle = {Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE},
      year = {2008},
      pages = {479-482},
      month = {June},
      doi = {10.1109/RFIC.2008.4561481},
      issn = {1529-2517},
      keywords = {CMOS integrated circuits;electromagnetic coupling;inductors;integrated
      circuit modelling;radiofrequency integrated circuits;CMOS technology;EM
      interference;Si;coupling wideband modeling;cross-coupling effects;inductor
      self-resonance;mutual inductance;silicon RF-IC;symmetrical spiral
      inductors;CMOS technology;Circuit testing;Coupling circuits;Equivalent
      circuits;Inductors;Interference;Radiofrequency integrated circuits;Semiconductor
      device modeling;Silicon;Spirals;Coupling;cross talk;ground shield;inductor;mutual
      inductance;substrate coupling},
      timestamp = {2015.03.04}
    }

2007

  • [DOI] R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, “A 1.7-GHz 31dBm differential CMOS Class-E Power Amplifier with 58% PAE,” in Custom Integrated Circuits Conference, 2007. CICC ’07. IEEE, 2007, pp. 551-554.
    [Bibtex]
    @INPROCEEDINGS{2007Brama,
      author = {Brama, R. and Larcher, L. and Mazzanti, A. and Svelto, F.},
      title = {A 1.7-GHz 31dBm differential CMOS Class-E Power Amplifier with 58%
      PAE},
      booktitle = {Custom Integrated Circuits Conference, 2007. CICC '07. IEEE},
      year = {2007},
      pages = {551-554},
      month = {Sept},
      doi = {10.1109/CICC.2007.4405792},
      keywords = {CMOS integrated circuits;UHF amplifiers;differential amplifiers;harmonics
      suppression;power amplifiers;2nd harmonic suppression;CMOS technology;cascode
      device;differential CMOS class-E power amplifier;frequency 1.7 GHz;potential
      on-chip interference;power-added efficiency;radio frequency;thick
      oxide devices;CMOS technology;Differential amplifiers;Harmonics suppression;Interference
      suppression;Power amplifiers;Power generation;Power system harmonics;Prototypes;Radio
      frequency;Radiofrequency amplifiers},
      timestamp = {2015.03.04}
    }
  • [DOI] G. Cusmai, M. Repossi, G. Albasini, A. Mazzanti, and F. Svelto, “A Magnetically Tuned Quadrature Oscillator,” Solid-State Circuits, IEEE Journal of, vol. 42, iss. 12, pp. 2870-2877, 2007.
    [Bibtex]
    @ARTICLE{2007Cusmai,
      author = {Cusmai, G. and Repossi, M. and Albasini, G. and Mazzanti, A. and
      Svelto, F.},
      title = {A Magnetically Tuned Quadrature Oscillator},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2007},
      volume = {42},
      pages = {2870-2877},
      number = {12},
      month = {Dec},
      doi = {10.1109/JSSC.2007.908727},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;magnetic fields;oscillators;transformer windings;tuning;varactors;MOS
      varactors;continuous frequency tuning;frequency 3.5 GHz;frequency
      6.4 GHz;frequency 7.3 GHz;magnetic coupling;magnetic field;magnetically
      tuned quadrature oscillator;noise figure 170.5 dB;noise figure 176.5
      dB;phase noise;power 24 mW;quadrature generator;size 65 nm;transformer
      windings;transformer-capacitor oscillator cells;transformer-capacitor
      tank;Capacitors;Feedback loop;Frequency;Joining processes;Magnetic
      fields;Oscillators;Phase noise;Topology;Tuning;Windings;CMOS radio-frequency
      integrated circuits (RFICs);frequency tuning;integrated transformers;local
      oscillators;quadrature voltage-controlled oscillators (VCOs)},
      timestamp = {2015.03.04}
    }
  • [DOI] F. Svelto, A. Mazzanti, M. Sosio, and M. Repossi, “A CMOS Sub-Harmonic Architecture for Signal Down-Conversion at Ka-Band,” in Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on, 2007, pp. 179-182.
    [Bibtex]
    @INPROCEEDINGS{2007Sveltoa,
      author = {Svelto, F. and Mazzanti, A. and Sosio, M. and Repossi, M.},
      title = {A CMOS Sub-Harmonic Architecture for Signal Down-Conversion at Ka-Band},
      booktitle = {Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International
      Workshop on},
      year = {2007},
      pages = {179-182},
      month = {Dec},
      doi = {10.1109/RFIT.2007.4443945},
      keywords = {CMOS integrated circuits;intermodulation distortion;microwave receivers;millimetre
      wave receivers;quadrature amplitude modulation;signal processing;CMOS
      sub-harmonic architecture;Ka-band;frequency translation;integrated
      circuit architecture;intermodulation distortion;lower frequency reference;mm-wave
      receiver;quadrature demodulator;quadrature sub-harmonic mixing;signal
      down conversion;signal processing;size 65 nm;tuning elements;Demodulation;Filters;Frequency
      conversion;Frequency synthesizers;Image converters;Mixers;Radio frequency;Signal
      processing;Tuning;Voltage-controlled oscillators;Silicon mmWaves
      Integrated Circuits;direct conversion;multi-phase Voltage Controlled
      Oscillators;sub-harmonic mixers},
      timestamp = {2015.03.04}
    }

2006

  • [DOI] R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, “Impact of Scaling on CMOS Radio Frequency Class-E Power Amplifiers,” in Research in Microelectronics and Electronics 2006, Ph. D., 2006, pp. 489-492.
    [Bibtex]
    @INPROCEEDINGS{2006Brama,
      author = {Brama, R. and Larcher, L. and Mazzanti, A. and Svelto, F.},
      title = {Impact of Scaling on CMOS Radio Frequency Class-E Power Amplifiers},
      booktitle = {Research in Microelectronics and Electronics 2006, Ph. D.},
      year = {2006},
      pages = {489-492},
      doi = {10.1109/RME.2006.1690000},
      keywords = {CMOS integrated circuits;power amplifiers;radiofrequency integrated
      circuits;CMOS integrated circuits;class-E power amplifiers;power
      added efficiency;power loss;radiofrequency integrated circuits;Analytical
      models;CMOS analog integrated circuits;CMOS digital integrated circuits;CMOS
      technology;Circuit simulation;High power amplifiers;Power amplifiers;Power
      generation;Radio frequency;Radiofrequency amplifiers},
      timestamp = {2015.03.04}
    }
  • [DOI] L. Larcher, D. Sanzogni, R. Brama, A. Mazzanti, and F. Svelto, “Oxide Breakdown After RF Stress: Experimental Analysis and Effects on Power Amplifier Operation,” in Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International, 2006, pp. 283-288.
    [Bibtex]
    @INPROCEEDINGS{2006Larcher,
      author = {Larcher, L. and Sanzogni, D. and Brama, R. and Mazzanti, A. and Svelto,
      F.},
      title = {Oxide Breakdown After RF Stress: Experimental Analysis and Effects
      on Power Amplifier Operation},
      booktitle = {Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE
      International},
      year = {2006},
      pages = {283-288},
      month = {March},
      doi = {10.1109/RELPHY.2006.251229},
      keywords = {CMOS integrated circuits;power amplifiers;radiofrequency integrated
      circuits;semiconductor device reliability;transceivers;CMOS radiofrequency
      transceivers;MOSFET;gate-oxide breakdown;power amplifiers;semiconductor
      device reliability;Degradation;Electric breakdown;MOSFETs;Operational
      amplifiers;Power amplifiers;Radio frequency;Radiofrequency amplifiers;Stress;Transceivers;Voltage;RF
      circuits reliability;oxide breakdown;oxide reliability},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Liscidini, A. Mazzanti, R. Tonietto, L. Vandi, P. Andreani, and R. Castello, “Single-Stage Low-Power Quadrature RF Receiver Front-End: The LMV Cell,” Solid-State Circuits, IEEE Journal of, vol. 41, iss. 12, pp. 2832-2841, 2006.
    [Bibtex]
    @ARTICLE{2006Liscidini,
      author = {Liscidini, A. and Mazzanti, A. and Tonietto, R. and Vandi, L. and
      Andreani, P. and Castello, R.},
      title = {Single-Stage Low-Power Quadrature RF Receiver Front-End: The LMV
      Cell},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2006},
      volume = {41},
      pages = {2832-2841},
      number = {12},
      month = {Dec},
      doi = {10.1109/JSSC.2006.884824},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;Global Positioning System;low-power electronics;mixers
      (circuits);radio receivers;voltage-controlled oscillators;0.13 micron;1.2
      V;36 dB;4.8 dB;5.4 mW;CMOS prototype;GPS receiver;LMV cell;classical
      LC tank oscillator;current reuse;low-noise amplifier;self-oscillating
      mixer;single-stage low-power quadrature RF receiver front-end;voltage-controlled
      oscillator;CMOS technology;Energy consumption;Gain;Global Positioning
      System;Low-noise amplifiers;Noise figure;Prototypes;Radio frequency;Voltage;Voltage-controlled
      oscillators;LC tank oscillator;Current reuse;GPS receiver;RF receiver;low
      power;low voltage;low-IF architecture;self-oscillating mixer (SOM)},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Liscidini, A. Mazzanti, R. Tonietto, L. Vandi, P. Andreani, and R. Castello, “A 5.4mW GPS CMOS Quadrature Front-End Based on a Single-Stage LNA-Mixer-VCO,” in Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International, 2006, pp. 1892-1901.
    [Bibtex]
    @INPROCEEDINGS{2006Liscidinia,
      author = {Liscidini, A. and Mazzanti, A. and Tonietto, R. and Vandi, L. and
      Andreani, P. and Castello, R.},
      title = {A 5.4mW GPS CMOS Quadrature Front-End Based on a Single-Stage LNA-Mixer-VCO},
      booktitle = {Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical
      Papers. IEEE International},
      year = {2006},
      pages = {1892-1901},
      month = {Feb},
      doi = {10.1109/ISSCC.2006.1696247},
      issn = {0193-6530},
      keywords = {CMOS integrated circuits;Global Positioning System;low noise amplifiers;mixers
      (circuits);radio receivers;radiofrequency integrated circuits;voltage-controlled
      oscillators;0.13 micron;1.2 V;36 dB;4.8 dB;5.4 mW;CMOS quadrature
      front-end;Global Positioning System;low noise amplifiers;self-oscillating
      mixers;voltage controlled oscillators;Baseband;Circuits;Global Positioning
      System;Impedance;Mixers;RF signals;Radio frequency;Switches;Voltage;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, L. Larcher, R. Brama, and F. Svelto, “Analysis of reliability and power efficiency in cascode class-E PAs,” Solid-State Circuits, IEEE Journal of, vol. 41, iss. 5, pp. 1222-1229, 2006.
    [Bibtex]
    @ARTICLE{2006Mazzanti,
      author = {Mazzanti, A. and Larcher, L. and Brama, R. and Svelto, F.},
      title = {Analysis of reliability and power efficiency in cascode class-E PAs},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2006},
      volume = {41},
      pages = {1222-1229},
      number = {5},
      month = {May},
      doi = {10.1109/JSSC.2006.872734},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;UHF integrated circuits;UHF power amplifiers;integrated
      circuit reliability;0.13 micron;1.4 to 2.0 GHz;1.7 GHz;CMOS power
      amplifier;cascode class-E power amplifier;cascode-based topologies;device
      stacking;power efficiency;radiofrequency circuits;switching amplifier;wireless
      communications;Bandwidth;CMOS technology;Circuit topology;Design
      optimization;Frequency;Power amplifiers;Prototypes;Stacking;Stress;Voltage;CMOS
      power amplifier;Class-E;radio-frequency (RF) circuits;switching amplifier;wireless
      communications},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti and F. Svelto, “A 1.8-GHz injection-locked quadrature CMOS VCO with low phase noise and high phase accuracy,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 53, iss. 3, pp. 554-560, 2006.
    [Bibtex]
    @ARTICLE{2006Mazzantia,
      author = {Mazzanti, A. and Svelto, F.},
      title = {A 1.8-GHz injection-locked quadrature CMOS VCO with low phase noise
      and high phase accuracy},
      journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on},
      year = {2006},
      volume = {53},
      pages = {554-560},
      number = {3},
      month = {March},
      doi = {10.1109/TCSI.2005.858161},
      issn = {1549-8328},
      keywords = {CMOS integrated circuits;UHF oscillators;injection locked oscillators;integrated
      circuit noise;mixers (circuits);phase noise;voltage-controlled oscillators;0.18
      micron;1.8 GHz;1.8 V;10 mA;185 dB;3 MHz;600 kHz;CMOS technology;IBR
      measurements;image band rejection measurements;injection-locked oscillators;phase
      noise;quadrature CMOS VCO;upconversion mixer;voltage-controlled oscillators;CMOS
      technology;Capacitance;Frequency conversion;Injection-locked oscillators;Local
      oscillators;Phase noise;Power generation;Prototypes;Radiofrequency
      integrated circuits;Voltage-controlled oscillators;CMOS radio frequency
      integrated circuits;injection locking (IL);local oscillators;phase
      noise;quadrature generation;voltage-controlled oscillators (VCO)},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, F. Svelto, and P. Andreani, “On the amplitude and phase errors of quadrature LC-tank CMOS oscillators,” Solid-State Circuits, IEEE Journal of, vol. 41, iss. 6, pp. 1305-1313, 2006.
    [Bibtex]
    @ARTICLE{2006Mazzantib,
      author = {Mazzanti, A. and Svelto, F. and Andreani, P.},
      title = {On the amplitude and phase errors of quadrature LC-tank CMOS oscillators},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2006},
      volume = {41},
      pages = {1305-1313},
      number = {6},
      month = {June},
      doi = {10.1109/JSSC.2006.874333},
      issn = {0018-9200},
      keywords = {CMOS integrated circuits;radiofrequency oscillators;voltage-controlled
      oscillators;CMOS oscillator;CMOS process;amplitude error;amplitude
      imbalance;component mismatch;frequency up-converter;parasitic inductor
      coupling;parasitic magnetic field;phase error;phase imbalance;quadrature
      LC oscillator;quadrature LC tank;small signal circuit;Amplitude estimation;Circuit
      topology;Coupling circuits;Differential equations;Displays;Inductors;Magnetic
      analysis;Magnetic fields;Oscillators;Phase estimation;CMOS radio
      frequency integrated circuits;image rejection;local oscillators;phase
      accuracy;quadrature voltage-controlled oscillators (QVCOs)},
      timestamp = {2015.03.04}
    }

2005

  • [DOI] A. Mazzanti, L. Larcher, R. Brama, and F. Svelto, “A 1.4 GHz-2 GHz wideband CMOS class-E power amplifier delivering 23 dBm peak with 67% PAE,” in Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE, 2005, pp. 425-428.
    [Bibtex]
    @INPROCEEDINGS{2005Mazzanti,
      author = {Mazzanti, A. and Larcher, L. and Brama, R. and Svelto, F.},
      title = {A 1.4 GHz-2 GHz wideband CMOS class-E power amplifier delivering
      23 dBm peak with 67% PAE},
      booktitle = {Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest
      of Papers. 2005 IEEE},
      year = {2005},
      pages = {425-428},
      month = {June},
      doi = {10.1109/RFIC.2005.1489832},
      issn = {1529-2517},
      keywords = {CMOS analogue integrated circuits;UHF integrated circuits;UHF power
      amplifiers;inductors;integrated circuit design;network topology;wideband
      amplifiers;0.13 micron;1.4 to 2 GHz;CMOS amplifier;MOS capacitive
      parasitics;cascode topology;device stress;efficiency;integrated inductor;wideband
      CMOS class-E power amplifier;wideband amplifier;Broadband amplifiers;CMOS
      technology;Circuit optimization;Inductors;Power amplifiers;Radio
      frequency;Radiofrequency amplifiers;Stress;Transceivers;Voltage},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, L. Larcher, and F. Svelto, “Balanced CMOS LC-tank analog frequency dividers for quadrature LO generation,” in Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005, 2005, pp. 575-578.
    [Bibtex]
    @INPROCEEDINGS{2005Mazzantia,
      author = {Mazzanti, A. and Larcher, L. and Svelto, F.},
      title = {Balanced CMOS LC-tank analog frequency dividers for quadrature LO
      generation},
      booktitle = {Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE
      2005},
      year = {2005},
      pages = {575-578},
      month = {Sept},
      doi = {10.1109/CICC.2005.1568733},
      keywords = {CMOS integrated circuits;Q-factor;analogue circuits;frequency dividers;injection
      locked oscillators;signal generators;0.18 micron;1.5 pF;8 mA;CMOS
      prototypes;LC-tank balanced divider;analog frequency dividers;band
      edge;image rejection;injection locked frequency dividers;operation
      bandwidth;output capacitance;quadrature LO generation;quadrature
      accuracy;regenerative circuit;side band up-converter;signal generation;tank
      quality factor;Bandwidth;CMOS technology;Capacitance;Frequency conversion;Inductors;Injection-locked
      oscillators;Performance evaluation;Prototypes;Q factor;Signal generators},
      timestamp = {2015.03.04}
    }

2004

  • [DOI] A. Mazzanti and F. Svelto, “Injection locked oscillators for quadrature generation at radio frequency,” in Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on, 2004, pp. 124-127.
    [Bibtex]
    @INPROCEEDINGS{2004Mazzanti,
      author = {Mazzanti, A. and Svelto, F.},
      title = {Injection locked oscillators for quadrature generation at radio frequency},
      booktitle = {Microelectronics, 2004. ICM 2004 Proceedings. The 16th International
      Conference on},
      year = {2004},
      pages = {124-127},
      month = {Dec},
      doi = {10.1109/ICM.2004.1434224},
      keywords = {CMOS integrated circuits;injection locked oscillators;low-power electronics;power
      consumption;radiofrequency oscillators;signal generators;transceivers;voltage-controlled
      oscillators;0.18 micron;CMOS technology;RF transceivers;injection
      locked oscillators;low power consumption;quadrature signal generators;radiofrequency
      transceivers;CMOS technology;Degradation;Energy consumption;Filters;Injection-locked
      oscillators;Phase noise;Radio frequency;Signal generators;Transceivers;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, P. Uggetti, R. Battagia, and F. Svelto, “Analysis and design of a dual band reconfigurable VCO,” in Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on, 2004, pp. 37-40.
    [Bibtex]
    @INPROCEEDINGS{2004Mazzantia,
      author = {Mazzanti, A. and Uggetti, P. and Battagia, R. and Svelto, F.},
      title = {Analysis and design of a dual band reconfigurable VCO},
      booktitle = {Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings
      of the 2004 11th IEEE International Conference on},
      year = {2004},
      pages = {37-40},
      month = {Dec},
      doi = {10.1109/ICECS.2004.1399608},
      keywords = {CMOS analogue integrated circuits;UHF oscillators;inductors;reconfigurable
      architectures;0.13 micron;1.8 GHz;900 MHz;CMOS;GSM900/1800 VCO;LC
      VCO;dual band reconfigurable VCO;oscillation frequency switching;series
      inductor switching;tank Q-factor;tank reactive element;CMOS technology;Dual
      band;Energy consumption;Frequency;Inductors;MOS devices;Phase noise;Switches;Tuning;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, P. Uggetti, and F. Svelto, “Injection locked coupled VCOs for low phase noise and high accuracy quadrature generation,” in Norchip Conference, 2004. Proceedings, 2004, pp. 51-54.
    [Bibtex]
    @INPROCEEDINGS{2004Mazzantib,
      author = {Mazzanti, A. and Uggetti, P. and Svelto, F.},
      title = {Injection locked coupled VCOs for low phase noise and high accuracy
      quadrature generation},
      booktitle = {Norchip Conference, 2004. Proceedings},
      year = {2004},
      pages = {51-54},
      month = {Nov},
      doi = {10.1109/NORCHP.2004.1423820},
      keywords = {CMOS technology;Circuits;Degradation;Noise generators;Noise measurement;Phase
      noise;Power generation;Prototypes;Signal generators;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, P. Uggetti, and F. Svelto, “Analysis and design of injection-locked LC dividers for quadrature generation,” Solid-State Circuits, IEEE Journal of, vol. 39, iss. 9, pp. 1425-1433, 2004.
    [Bibtex]
    @ARTICLE{2004Mazzantic,
      author = {Mazzanti, A. and Uggetti, P. and Svelto, F.},
      title = {Analysis and design of injection-locked LC dividers for quadrature
      generation},
      journal = {Solid-State Circuits, IEEE Journal of},
      year = {2004},
      volume = {39},
      pages = {1425-1433},
      number = {9},
      month = {Sept},
      doi = {10.1109/JSSC.2004.831596},
      issn = {0018-9200},
      keywords = {3G mobile communication;CMOS integrated circuits;frequency dividers;injection
      locked oscillators;integrated circuit modelling;low-power electronics;phase
      noise;radio receivers;voltage-controlled oscillators;0.18 micron;2
      mA;CMOS integrated circuit;RF CMOS;RF receivers;Universal Mobile
      Telecommunication System;circuit modeling;frequency locking;injection
      locking;injection-locked LC dividers;locking band;phase deviation;phase
      noise;quadrature generation;regenerative frequency dividers;tank
      quality factor;voltage-controlled oscillators;3G mobile communication;CMOS
      technology;Circuits;Frequency conversion;Injection-locked oscillators;Local
      oscillators;Phase measurement;Phase noise;Radio frequency;Voltage-controlled
      oscillators;Direct conversion;RF CMOS;RF receivers;UMTS;VCO;frequency
      dividers;injection locking;phase noise;quadrature;voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }

2003

  • [DOI] A. Mazzanti, P. Uggetti, P. Rossi, and F. Svelto, “Injection locking LC dividers for low power quadrature generation,” in Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003, 2003, pp. 563-566.
    [Bibtex]
    @INPROCEEDINGS{2003Mazzanti,
      author = {Mazzanti, A. and Uggetti, P. and Rossi, P. and Svelto, F.},
      title = {Injection locking LC dividers for low power quadrature generation},
      booktitle = {Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE
      2003},
      year = {2003},
      pages = {563-566},
      month = {Sept},
      doi = {10.1109/CICC.2003.1249461},
      keywords = {CMOS integrated circuits;frequency dividers;injection locked oscillators;low-power
      electronics;phase noise;0.18 micron;4 mA;CMOS direct conversion receiver;I/Q
      generation;coupled voltage controlled oscillators;frequency locking
      range;injection locking LC dividers;injection locking frequency dividers;locking
      band;low power quadrature generation;phase noise;quadrature accuracy;quadrature
      phase deviation;regenerative frequency dividers;CMOS technology;Capacitance;Energy
      consumption;Frequency conversion;Injection-locked oscillators;Phase
      measurement;Phase noise;Power generation;Semiconductor device modeling;Voltage-controlled
      oscillators},
      timestamp = {2015.03.04}
    }
  • [DOI] G. Verzellesi, A. Basile, A. Mazzanti, C. Canali, G. Meneghesso, and E. Zanoni, “Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs,” Electronics Letters, vol. 39, iss. 10, pp. 810-811, 2003.
    [Bibtex]
    @ARTICLE{2003Verzellesi,
      author = {Verzellesi, G. and Basile, A. and Mazzanti, A. and Canali, C. and
      Meneghesso, G. and Zanoni, E.},
      title = {Impact of temperature on surface-trap-induced gate-lag effects in
      GaAs heterostructure FETs},
      journal = {Electronics Letters},
      year = {2003},
      volume = {39},
      pages = {810-811},
      number = {10},
      month = {May},
      doi = {10.1049/el:20030529},
      issn = {0013-5194},
      keywords = {III-V semiconductors;aluminium compounds;field effect transistors;gallium
      arsenide;hole traps;semiconductor device models;surface states;2D
      device simulations;AlGaAs-GaAs;GaAs HFETs;double-recess power HFETs;drain
      current transient;heterostructure FETs;heterostructure field-effect
      transistors;hole traps;surface-trap-induced gate-lag effects;temperature
      impact;turn-on waveforms;ungated recess surface},
      timestamp = {2015.03.04}
    }
  • [DOI] G. Verzellesi, A. Basile, A. Mazzanti, A. Cavallini, and C. Canali, “Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs,” Electronics Letters, vol. 39, iss. 21, pp. 1548-1549, 2003.
    [Bibtex]
    @ARTICLE{2003Verzellesia,
      author = {Verzellesi, G. and Basile, A. and Mazzanti, A. and Cavallini, A.
      and Canali, C.},
      title = {Energetic and spatial localisation of deep-level traps responsible
      for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs},
      journal = {Electronics Letters},
      year = {2003},
      volume = {39},
      pages = {1548-1549},
      number = {21},
      month = {Oct},
      doi = {10.1049/el:20030950},
      issn = {0013-5194},
      keywords = {III-V semiconductors;aluminium compounds;deep level transient spectroscopy;deep
      levels;electron traps;field effect transistors;gallium arsenide;AlGaAs-GaAs;AlGaAs-GaAs
      HFETs;DC-to-RF dispersion effects;I-DLTS experiments;current deep
      level transient spectroscopy;deep-level traps;energetic localisation;gate-lag
      transconductance frequency dispersion;heterostructure FETs;heterostructure
      field-effect transistors;spatial localisation},
      timestamp = {2015.03.04}
    }
  • [DOI] G. Verzellesi, A. Mazzanti, A. F. Basile, A. Boni, E. Zanoni, and C. Canali, “Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs),” Electron Devices, IEEE Transactions on, vol. 50, iss. 8, pp. 1733-1740, 2003.
    [Bibtex]
    @ARTICLE{2003Verzellesib,
      author = {Verzellesi, G. and Mazzanti, A. and Basile, A.F. and Boni, A. and
      Zanoni, E. and Canali, C.},
      title = {Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs
      heterostructure field-effect transistors (FETs)},
      journal = {Electron Devices, IEEE Transactions on},
      year = {2003},
      volume = {50},
      pages = {1733-1740},
      number = {8},
      month = {Aug},
      doi = {10.1109/TED.2003.815134},
      issn = {0018-9383},
      keywords = {III-V semiconductors;aluminium compounds;deep levels;gallium arsenide;hole
      traps;junction gate field effect transistors;surface states;AlGaAs-GaAs;AlGaAs-GaAs
      heterostructure field effect transistor;acceptor states;deep levels;device
      switching;drain bias;gate lag;hole traps;numerical simulation;off-state
      gate-source voltage;surface states;temperature dependence;turn-on
      transient;ungated recess surface;Delay;Electron traps;FETs;HEMTs;III-V
      semiconductor materials;Irrigation;MODFETs;Numerical simulation;Radio
      frequency;Surface charging},
      timestamp = {2015.03.04}
    }
  • [DOI] G. Verzellesi, A. Mazzanti, C. Canali, G. Meneghesso, A. Chini, and E. Zanoni, “Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs,” in GaAs Reliability Workshop, 2003. Proceedings, 2003, pp. 155-156.
    [Bibtex]
    @INPROCEEDINGS{2003Verzellesic,
      author = {Verzellesi, G. and Mazzanti, A. and Canali, C. and Meneghesso, G.
      and Chini, A. and Zanoni, E.},
      title = {Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based
      beterostructure FETs},
      booktitle = {GaAs Reliability Workshop, 2003. Proceedings},
      year = {2003},
      pages = {155-156},
      doi = {10.1109/GAASRW.2003.183773},
      keywords = {Aluminum gallium nitride;Dispersion;FETs;Gallium nitride;HEMTs;Impact
      ionization;MODFETs;Polarization;Pulse measurements;Temperature measurement},
      timestamp = {2015.03.04}
    }

2002

  • [DOI] A. F. Basile, A. Mazzanti, E. Manzini, G. Verzellesi, C. Canali, R. Pierobon, and C. Lanzieri, “Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs,” in Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on, 2002, pp. 63-68.
    [Bibtex]
    @INPROCEEDINGS{2002Basile,
      author = {Basile, A.F. and Mazzanti, A. and Manzini, E. and Verzellesi, G.
      and Canali, C. and Pierobon, R. and Lanzieri, C.},
      title = {Experimental and numerical analysis of gate- and drain-lag phenomena
      in AlGaAs/InGaAs PHEMTs},
      booktitle = {Electron Devices for Microwave and Optoelectronic Applications, 2002.
      EDMO 2002. The 10th IEEE International Symposium on},
      year = {2002},
      pages = {63-68},
      month = {Nov},
      doi = {10.1109/EDMO.2002.1174931},
      keywords = {III-V semiconductors;aluminium compounds;electronic engineering computing;gallium
      arsenide;high electron mobility transistors;semiconductor device
      measurement;semiconductor device models;transient response;AlGaAs-InGaAs;AlGaAs/InGaAs
      PHEMT drain-lag phenomena;acceptor-like surface traps;gate source/drain
      contact ungated surfaces;pseudomorphic HEMT gate-lag phenomena;pulsed
      PHEMT characteristics;transient response;Analytical models;Doping;Gallium
      arsenide;Heating;Indium gallium arsenide;Irrigation;Numerical analysis;PHEMTs;Transient
      analysis;Voltage},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, G. Verzellesi, C. Canali, G. Meneghesso, and E. Zanoni, “Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs,” Electron Device Letters, IEEE, vol. 23, iss. 7, pp. 383-385, 2002.
    [Bibtex]
    @ARTICLE{2002Mazzanti,
      author = {Mazzanti, A. and Verzellesi, G. and Canali, C. and Meneghesso, G.
      and Zanoni, E.},
      title = {Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs},
      journal = {Electron Device Letters, IEEE},
      year = {2002},
      volume = {23},
      pages = {383-385},
      number = {7},
      month = {July},
      doi = {10.1109/LED.2002.1015205},
      issn = {0741-3106},
      keywords = {III-V semiconductors;aluminium compounds;deep levels;field effect
      transistors;gallium arsenide;impact ionisation;semiconductor device
      measurement;semiconductor device models;AlGaAs-GaAs;AlGaAs/GaAs;HFETs;capture
      phenomena;conductive-channel widening;deep levels;doped-channel heterostructure
      field effect transistors;drain-current increase;drain-source voltages;hole
      emission;impact-ionization-generated holes;kink dynamics;surface
      deep acceptors;two-dimensional device simulations;Gallium arsenide;HEMTs;Irrigation;MODFETs;Numerical
      simulation;Pulse measurements;Surface discharges;Time measurement;Voltage},
      timestamp = {2015.03.04}
    }
  • [DOI] A. Mazzanti, G. Verzellesi, G. Sozzi, R. Menozzi, C. Lanzieri, and C. Canali, “Physical investigation of trap-related effects in power HFETs and their reliability implications,” Device and Materials Reliability, IEEE Transactions on, vol. 2, iss. 3, pp. 65-71, 2002.
    [Bibtex]
    @ARTICLE{2002Mazzantia,
      author = {Mazzanti, A. and Verzellesi, G. and Sozzi, G. and Menozzi, R. and
      Lanzieri, C. and Canali, C.},
      title = {Physical investigation of trap-related effects in power HFETs and
      their reliability implications},
      journal = {Device and Materials Reliability, IEEE Transactions on},
      year = {2002},
      volume = {2},
      pages = {65-71},
      number = {3},
      month = {Sep},
      doi = {10.1109/TDMR.2002.804512},
      issn = {1530-4388},
      keywords = {III-V semiconductors;aluminium compounds;gallium arsenide;hot carriers;impact
      ionisation;interface states;microwave field effect transistors;microwave
      power transistors;power field effect transistors;semiconductor device
      models;surface states;Al0.25Ga0.75As-GaAs;GaAs power HFETs;channel-buffer
      interface trap density;dc output curve kink;drain current;drain current
      hot-carrier degradation;hot-carrier-stressed HFETs;hydrodynamic model;impact
      ionization;impact-ionization-dominated reverse gate current;intertwined
      phenomena;kink effect;microwave power FETs;reliability implications;source-gate
      recess surface traps;trap-related effects;trapping effects;two-dimensional
      numerical simulations;Degradation;Gallium arsenide;HEMTs;Hot carrier
      effects;Hot carriers;Hydrodynamics;Impact ionization;MODFETs;Numerical
      simulation;Performance gain},
      timestamp = {2015.03.04}
    }

2001

  • [DOI] A. Mazzanti, G. Verzellesi, L. Vicini, C. Canali, A. Chini, G. Meneghesso, E. Zanoni, and C. Lanzieri, “Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs,” in Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on, 2001, pp. 137-142.
    [Bibtex]
    @INPROCEEDINGS{2001Mazzanti,
      author = {Mazzanti, A. and Verzellesi, G. and Vicini, L. and Canali, C. and
      Chini, A. and Meneghesso, G. and Zanoni, E. and Lanzieri, C.},
      title = {Dependence of impact ionization and kink on surface-deep-level dynamics
      in AlGaAs/GaAs HFETs},
      booktitle = {Electron Devices for Microwave and Optoelectronic Applications, 2001
      International Symposium on},
      year = {2001},
      pages = {137-142},
      doi = {10.1109/EDMO.2001.974297},
      keywords = {III-V semiconductors;aluminium compounds;deep levels;field effect
      transistors;gallium arsenide;hole traps;impact ionisation;semiconductor
      device measurement;semiconductor device models;2D device simulations;AlGaAs-GaAs;AlGaAs/GaAs
      HFETs;drain-current time constant;high drain-source voltages;hole
      capture rate;hole emission;impact-ionization-generated holes;kink
      dynamics;negative trapped charge;pulsed operation;recess surface
      defects;surface deep levels;surface hole density;FETs;Gallium arsenide;HEMTs;III-V
      semiconductor materials;Impact ionization;MODFETs;Pulse measurements;Stress
      measurement;Surface discharges;Voltage},
      timestamp = {2015.03.04}
    }