Zhao, Junlei

Ph.D. 2015

He was born in Yichang, China, in 1986. He received the B.S. and M.S. degrees in Electronics Engineering in 2008 and 2011, respectively, both from Peking University, Beijing, China. During his Master degree thesis, he studied high-speed Digital to Analog Converter.

Since 2011, he works toward the Ph.D. in Microelectronics in University of Pavia under the supervision of Professor Francesco Svelto.

His research interests include RF and mm-wave IC design, with particular focus on low power transceiver for high-speed short-range wireless communication.


CONTACT

E-mail: junlei.zhao@unipv.it


PUBLICATIONS

2015

  • [DOI] J. Zhao, M. Bassi, A. Mazzanti, and F. Svelto, “A 15 GHz-bandwidth 20dBm PSAT power amplifier with 22% PAE in 65nm CMOS,” in Custom Integrated Circuits Conference (CICC), 2015 IEEE, 2015, pp. 1-4.
    [Bibtex]
    @INPROCEEDINGS{7338363, 
    author={J. Zhao and M. Bassi and A. Mazzanti and F. Svelto}, 
    booktitle={Custom Integrated Circuits Conference (CICC), 2015 IEEE}, 
    title={A 15 GHz-bandwidth 20dBm PSAT power amplifier with 22% PAE in 65nm CMOS}, 
    year={2015}, 
    pages={1-4}, 
    keywords={CMOS integrated circuits;IEEE standards;microwave amplifiers;microwave integrated circuits;power amplifiers;power combiners;CMOS;IEEE820.15;PAE;PSAT power amplifier;Wigig;bandwidth 15 GHz;coupled resonators;frequency 58.5 GHz to 73.5 GHz;gain 30 dB;gain-bandwidth product;power combiners;power splitters;size 65 nm;Bandwidth;Capacitors;Gain;Inductors;Power combiners;Power generation;Resonant frequency}, 
    doi={10.1109/CICC.2015.7338363}, 
    month={Sept},}
  • [DOI] M. Bassi, J. Zhao, A. Bevilacqua, A. Ghilioni, A. Mazzanti, and F. Svelto, “A 40-67 GHz Power Amplifier With 13 dBm Psat and 16% PAE in 28 nm CMOS LP,” Solid-State Circuits, IEEE Journal of, vol. PP, iss. 99, pp. 1-11, 2015.
    [Bibtex]
    @ARTICLE{7065334, 
      author={Bassi, M. and Zhao, J. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}, 
      journal={Solid-State Circuits, IEEE Journal of}, 
      title={A 40-67 GHz Power Amplifier With 13 dBm Psat and 16% PAE in 28 nm CMOS LP}, 
      year={2015}, 
      month={}, 
      volume={PP}, 
      number={99}, 
      pages={1-11}, 
      keywords={Bandwidth;CMOS integrated circuits;Capacitance;Impedance;Inductors;Power amplifiers;Power generation;Broadband amplifiers;CMOS integrated circuits;coupled resonators;gain-bandwidth product;millimeter wave integrated circuits;power amplifiers;resonator filters}, 
      doi={10.1109/JSSC.2015.2409295}, 
      ISSN={0018-9200}
    }

2014

  • [DOI] J. Zhao, M. Bassi, A. Bevilacqua, A. Ghilioni, A. Mazzanti, and F. Svelto, “A 40-67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP,” in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 – 40th, 2014, pp. 179-182.
    [Bibtex]
    @INPROCEEDINGS{2014Zhao,
      author = {Junlei Zhao and Bassi, M. and Bevilacqua, A. and Ghilioni, A. and
      Mazzanti, A. and Svelto, F.},
      title = {A 40-67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS
      LP},
      booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014
      - 40th},
      year = {2014},
      pages = {179-182},
      month = {Sept},
      doi = {10.1109/ESSCIRC.2014.6942051},
      issn = {1930-8833},
      keywords = {CMOS analogue integrated circuits;differential amplifiers;field effect
      MIMIC;impedance matching;low-power electronics;millimetre wave power
      amplifiers;millimetre wave resonators;wideband amplifiers;CMOS LP;Norton
      transformations;PAE;PSAT;efficiency 16 percent;frequency 40 GHz to
      67 GHz;impedance matching;low-power devices;mm-wave PAs;neutralized
      common source stages;output matching networks;size 28 nm;two-stage
      differential PA;wideband inductively coupled resonators;wideband
      power amplifiers;wireless applications;Bandwidth;CMOS integrated
      circuits;Gain;Impedance;Impedance matching;Inductors;Power generation},
      timestamp = {2015.03.04}
    }