Our intense research activity leads to the production of a large amount of relevant journal papers and conference proceedings.

The complete list of publications produced by the current and former members of our laboratory is the following:

### 2017

- M. Sautto, A. S. Savoia, F. Quaglia, G. Caliano, and A. Mazzanti, “A Comparative Analysis of CMUT Receiving Architectures for Design Optimization of Integrated Transceiver Front-Ends,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. PP, iss. 99, pp. 1-1, 2017.

[Bibtex]`@ARTICLE{7852516, author={M. Sautto and A. S. Savoia and F. Quaglia and G. Caliano and A. Mazzanti}, journal={IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control}, title={A Comparative Analysis of CMUT Receiving Architectures for Design Optimization of Integrated Transceiver Front-Ends}, year={2017}, volume={PP}, number={99}, pages={1-1}, keywords={Acoustics;Frequency response;Imaging;Sensitivity;Signal to noise ratio;Transducers;Ultrasonic imaging;BCD-SOI;T/R switch;Ultrasonic transceiver;capacitive micromachined ultrasonic transducer (CMUT);capacitive sensor;high-voltage (HV) driver;low-noise amplifier;sensor interface;ultrasound}, doi={10.1109/TUFFC.2017.2668769}, ISSN={0885-3010}, month={},}`

### 2016

- L. Iotti, A. Mazzanti, and F. Svelto, “A low-power 64 #8211;84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications,” in 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2016, pp. 1-4.

[Bibtex]`@INPROCEEDINGS{7519470, author={L. Iotti and A. Mazzanti and F. Svelto}, booktitle={2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)}, title={A low-power 64 #8211;84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications}, year={2016}, pages={1-4}, keywords={BiCMOS integrated circuits;frequency multipliers;frequency synthesizers;millimetre wave resonators;transformers;BiCMOS mm-wave frequency quadrupler;E-band backhaul applications;E-band frequency synthesizer;E-band wireless backhaul;GBW enhancement;fractional bandwidth;frequency 64 GHz to 84 GHz;low-power frequency quadrupler;power 7 mW;single-ended-to-differential conversion;transformer coupled resonators;Bandwidth;Couplings;Frequency measurement;Impedance matching;Mixers;Phase transformers;Resonant frequency;BiCMOS;E-Band;frequency multiplier;frequency quadrupler;mm-Wave;transformer-coupled resonators}, doi={10.1109/PRIME.2016.7519470}, month={June},}`

- L. Iotti, A. Mazzanti, and F. Svelto, “A multi-core VCO and a frequency quadrupler for E-Band adaptive-modulation links in 55nm BiCMOS,” in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, pp. 373-376.

[Bibtex]`@INPROCEEDINGS{7598319, author={L. Iotti and A. Mazzanti and F. Svelto}, booktitle={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, title={A multi-core VCO and a frequency quadrupler for E-Band adaptive-modulation links in 55nm BiCMOS}, year={2016}, pages={373-376}, keywords={BiCMOS integrated circuits;MIMIC;integrated circuit noise;millimetre wave oscillators;millimetre wave resonators;multiprocessing systems;phase noise;radio links;voltage-controlled oscillators;BiCMOS VCO;E-Band wireless backhaul applications;E-band adaptive-modulation links;bandwidth enhancement;frequency quadrupler;multicore VCO;multicore architecture;phase-noise performance;single-ended-to-differential conversion;size 55 nm;transformer-coupled resonators;BiCMOS integrated circuits;Couplings;Phase noise;Resonant frequency;Tuning;Voltage-controlled oscillators}, doi={10.1109/ESSCIRC.2016.7598319}, month={Sept},}`

- G. Anzalone, E. Monaco, G. Albasini, S. Erba, and A. Mazzanti, “A 0.2-11.7GHz, high accuracy injection-locking multi-phase generation with mixed analog/digital calibration loops in 28nm FDSOI CMOS,” in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, pp. 335-338.

[Bibtex]`@INPROCEEDINGS{7598310, author={G. Anzalone and E. Monaco and G. Albasini and S. Erba and A. Mazzanti}, booktitle={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, title={A 0.2-11.7GHz, high accuracy injection-locking multi-phase generation with mixed analog/digital calibration loops in 28nm FDSOI CMOS}, year={2016}, pages={335-338}, keywords={CMOS integrated circuits;MMIC mixers;UHF detectors;UHF integrated circuits;UHF measurement;UHF mixers;calibration;clocks;comparators (circuits);field effect MMIC;injection locked oscillators;low-power electronics;microwave detectors;microwave measurement;mixed analogue-digital integrated circuits;phase detectors;silicon-on-insulator;FDSOI CMOS;ILRO;digital coarse calibration;frequency 0.2 GHz to 11.7 GHz;high accuracy injection-locking multiphase generation;high-accuracy 8-phase clock generation;injection-locked ring oscillator;mixed analog-digital calibration loops;passive mixers;phase correction;phase detector;power consumption;quadrature phase error;quarter-rate multistandard I/O receivers;size 28 nm;temperature variations;window comparator;Calibration;Clocks;Phase noise;Silicon-on-insulator;Temperature measurement;Tuning}, doi={10.1109/ESSCIRC.2016.7598310}, month={Sept},}`

- P. F. Espin-Lopez, A. Martellosio, M. Pasian, M. Bozzi, L. Perregrini, A. Mazzanti, F. Svelto, M. Bellomi, G. Renne, and P. E. Summers, “Breast cancer imaging at mm-waves: Feasibility study on the safety exposure limits,” in 2016 46th European Microwave Conference (EuMC), 2016, pp. 667-670.

[Bibtex]`@INPROCEEDINGS{7824431, author={P. F. Espin-Lopez and A. Martellosio and M. Pasian and M. Bozzi and L. Perregrini and A. Mazzanti and F. Svelto and M. Bellomi and G. Renne and P. E. Summers}, booktitle={2016 46th European Microwave Conference (EuMC)}, title={Breast cancer imaging at mm-waves: Feasibility study on the safety exposure limits}, year={2016}, pages={667-670}, keywords={cancer;dosimetry;finite element analysis;microwave imaging;millimetre wave imaging;tumours;European ICNIRP recommendations;European clinical center;X-ray mammography;breast cancer imaging;cancer anomaly;dosimetric quantities;finite element method;human tissues;magnetic resonance imaging;medical therapies;microwave imaging system;mm-wave breast cancer imaging system;safety exposure limits;ultrasound imaging;Antennas;Breast cancer;Fats;Imaging;Receivers;Skin;Biological applications;breast cancer detection;dielectric spectroscopy;exposure safety and regulations;microwave and mm-wave imaging;specific absorbtion rate (SAR)}, doi={10.1109/EuMC.2016.7824431}, month={Oct},}`

- A. Martellosio, M. Pasian, M. Bozzi, L. Perregrini, A. Mazzanti, F. Svelto, P. E. Summers, G. Renne, L. Preda, and M. Bellomi, “Dielectric Properties Characterization From 0.5 to 50 GHz of Breast Cancer Tissues,” IEEE Transactions on Microwave Theory and Techniques, vol. PP, iss. 99, pp. 1-14, 2016.

[Bibtex]`@ARTICLE{7781570, author={A. Martellosio and M. Pasian and M. Bozzi and L. Perregrini and A. Mazzanti and F. Svelto and P. E. Summers and G. Renne and L. Preda and M. Bellomi}, journal={IEEE Transactions on Microwave Theory and Techniques}, title={Dielectric Properties Characterization From 0.5 to 50 GHz of Breast Cancer Tissues}, year={2016}, volume={PP}, number={99}, pages={1-14}, keywords={Breast;Dielectrics;Permittivity;Permittivity measurement;Probes;Sensors;Biomedical applications;breast cancer;dielectric characterization;dielectric properties;ex vivo tissues;microwave imaging;millimeter-waves;sensitivity;specificity.}, doi={10.1109/TMTT.2016.2631162}, ISSN={0018-9480}, month={},}`

- M. Bassi, F. Radice, M. Bruccoleri, S. Erba, and A. Mazzanti, “A High-Swing 45 Gb/s Hybrid Voltage and Current-Mode PAM-4 Transmitter in 28 nm CMOS FDSOI,” IEEE Journal of Solid-State Circuits, vol. 51, iss. 11, pp. 2702-2715, 2016.

[Bibtex]`@ARTICLE{7558236, author={M. Bassi and F. Radice and M. Bruccoleri and S. Erba and A. Mazzanti}, journal={IEEE Journal of Solid-State Circuits}, title={A High-Swing 45 Gb/s Hybrid Voltage and Current-Mode PAM-4 Transmitter in 28 nm CMOS FDSOI}, year={2016}, volume={51}, number={11}, pages={2702-2715}, keywords={CMOS integrated circuits;electrostatic discharge;equalisers;pulse amplitude modulation;semiconductor diodes;silicon-on-insulator;transmitters;CMOS;FDSOI;HBM ESD diodes;NRZ;PAM-4 transmitter;bit rate 400 Gbit/s;bit rate 45 Gbit/s;current 120 mA;duty-cycle correction circuit;electrical links;feed-forward equalizer;half-rate serializer;size 28 nm;voltage 1 V;voltage 1.3 V;voltage 2 kV;word length 5 bit;Distortion;Linearity;Modulation;Optical signal processing;Signal to noise ratio;Topology;Transmitters;Feed-forward equalizer;PAM-4;SerDes;transmitter;wireline}, doi={10.1109/JSSC.2016.2598223}, ISSN={0018-9200}, month={Nov},}`

- L. Iotti, A. Mazzanti, and F. Svelto, “A multi-core VCO and a frequency quadrupler for E-Band adaptive-modulation links in 55nm BiCMOS,” in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, pp. 373-376.

[Bibtex]`@INPROCEEDINGS{7598319, author={L. Iotti and A. Mazzanti and F. Svelto}, booktitle={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, title={A multi-core VCO and a frequency quadrupler for E-Band adaptive-modulation links in 55nm BiCMOS}, year={2016}, pages={373-376}, keywords={BiCMOS integrated circuits;MIMIC;integrated circuit noise;millimetre wave oscillators;millimetre wave resonators;multiprocessing systems;phase noise;radio links;voltage-controlled oscillators;BiCMOS VCO;E-Band wireless backhaul applications;E-band adaptive-modulation links;bandwidth enhancement;frequency quadrupler;multicore VCO;multicore architecture;phase-noise performance;single-ended-to-differential conversion;size 55 nm;transformer-coupled resonators;BiCMOS integrated circuits;Couplings;Phase noise;Resonant frequency;Tuning;Voltage-controlled oscillators}, doi={10.1109/ESSCIRC.2016.7598319}, month={Sept},}`

- G. Anzalone, E. Monaco, G. Albasini, S. Erba, and A. Mazzanti, “A 0.2-11.7GHz, high accuracy injection-locking multi-phase generation with mixed analog/digital calibration loops in 28nm FDSOI CMOS,” in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, pp. 335-338.

[Bibtex]`@INPROCEEDINGS{7598310, author={G. Anzalone and E. Monaco and G. Albasini and S. Erba and A. Mazzanti}, booktitle={ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference}, title={A 0.2-11.7GHz, high accuracy injection-locking multi-phase generation with mixed analog/digital calibration loops in 28nm FDSOI CMOS}, year={2016}, pages={335-338}, keywords={CMOS integrated circuits;MMIC mixers;UHF detectors;UHF integrated circuits;UHF measurement;UHF mixers;calibration;clocks;comparators (circuits);field effect MMIC;injection locked oscillators;low-power electronics;microwave detectors;microwave measurement;mixed analogue-digital integrated circuits;phase detectors;silicon-on-insulator;FDSOI CMOS;ILRO;digital coarse calibration;frequency 0.2 GHz to 11.7 GHz;high accuracy injection-locking multiphase generation;high-accuracy 8-phase clock generation;injection-locked ring oscillator;mixed analog-digital calibration loops;passive mixers;phase correction;phase detector;power consumption;quadrature phase error;quarter-rate multistandard I/O receivers;size 28 nm;temperature variations;window comparator;Calibration;Clocks;Phase noise;Silicon-on-insulator;Temperature measurement;Tuning}, doi={10.1109/ESSCIRC.2016.7598310}, month={Sept},}`

- L. Iotti, A. Mazzanti, and F. Svelto, “A low-power 64-84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications,” in 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2016, pp. 1-4.

[Bibtex]`@INPROCEEDINGS{7519470, author={L. Iotti and A. Mazzanti and F. Svelto}, booktitle={2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)}, title={A low-power 64-84GHz frequency quadrupler based on transformer-coupled resonators for E-Band backhaul applications}, year={2016}, pages={1-4}, keywords={BiCMOS integrated circuits;frequency multipliers;frequency synthesizers;millimetre wave resonators;transformers;BiCMOS mm-wave frequency quadrupler;E-band backhaul applications;E-band frequency synthesizer;E-band wireless backhaul;GBW enhancement;fractional bandwidth;frequency 64 GHz to 84 GHz;low-power frequency quadrupler;power 7 mW;single-ended-to-differential conversion;transformer coupled resonators;Bandwidth;Couplings;Frequency measurement;Impedance matching;Mixers;Phase transformers;Resonant frequency;BiCMOS;E-Band;frequency multiplier;frequency quadrupler;mm-Wave;transformer-coupled resonators}, doi={10.1109/PRIME.2016.7519470}, month={June},}`

- M. Sautto, F. Quaglia, G. Ricotti, and A. Mazzanti, “5.6 A 420uW 100GHz-GBW CMOS Programmable-Gain Amplifier leveraging the cross-coupled pair regeneration,” in 2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, pp. 98-99.

[Bibtex]`@INPROCEEDINGS{7417925, author={M. Sautto and F. Quaglia and G. Ricotti and A. Mazzanti}, booktitle={2016 IEEE International Solid-State Circuits Conference (ISSCC)}, title={5.6 A 420uW 100GHz-GBW CMOS Programmable-Gain Amplifier leveraging the cross-coupled pair regeneration}, year={2016}, pages={98-99}, keywords={integrated circuit design;millimetre wave amplifiers;programmable circuits;GBW CMOS programmable-gain amplifier;PGA;analog applications;broadband positive feedback;cross-coupled pair regeneration;digital applications;discrete-time linear amplification;frequency 100 GHz;memory cells;power 420 muW;sense amplifiers design;static latches;Bandwidth;CMOS integrated circuits;CMOS technology;Capacitors;Electronics packaging;Gain control;Solid state circuits}, doi={10.1109/ISSCC.2016.7417925}, month={Jan},}`

- E. Temporiti, G. Minoia, M. Repossi, D. Baldi, A. Ghilioni, and F. Svelto, “23.4 A 56Gb/s 300mW silicon-photonics transmitter in 3D-integrated PIC25G and 55nm BiCMOS technologies,” in 2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, pp. 404-405.

[Bibtex]`@INPROCEEDINGS{7418078, author={E. Temporiti and G. Minoia and M. Repossi and D. Baldi and A. Ghilioni and F. Svelto}, booktitle={2016 IEEE International Solid-State Circuits Conference (ISSCC)}, title={23.4 A 56Gb/s 300mW silicon-photonics transmitter in 3D-integrated PIC25G and 55nm BiCMOS technologies}, year={2016}, pages={404-405}, keywords={BiCMOS integrated circuits;electro-optical modulation;elemental semiconductors;equalisers;integrated optoelectronics;optical transceivers;power consumption;silicon;telecommunication power management;3D-integrated PIC25G;BiCMOS technology;MZM architecture;Next generation optical interfaces;Si;bifilar transmission line;bit rate 56 Gbit/s;cost reduction;data center IP traffic;electrical propagation loss;electro-optical conversion;electro-optical transmitter;electronic driver;equalization;extinction ratio;form factor optical module;integrated transmission line;load coupling;optical eye diagram;power 300 mW;power consumption minimization;power-efficient high-speed interconnect;predriving stage;silicon-photonics transmitter;transceiver power efficiency;travelling wave Mach-Zehnder modulator architecture;vertical aperture;BiCMOS integrated circuits;Erbium;High-speed optical techniques;Optical fiber communication;Optical transmitters;Power demand;Silicon photonics}, doi={10.1109/ISSCC.2016.7418078}, month={Jan},}`

- M. Bassi, F. Radice, M. Bruccoleri, S. Erba, and A. Mazzanti, “3.6 A 45Gb/s PAM-4 transmitter delivering 1.3Vppd output swing with 1V supply in 28nm CMOS FDSOI,” in 2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, pp. 66-67.

[Bibtex]`@INPROCEEDINGS{7417909, author={M. Bassi and F. Radice and M. Bruccoleri and S. Erba and A. Mazzanti}, booktitle={2016 IEEE International Solid-State Circuits Conference (ISSCC)}, title={3.6 A 45Gb/s PAM-4 transmitter delivering 1.3Vppd output swing with 1V supply in 28nm CMOS FDSOI}, year={2016}, pages={66-67}, keywords={CMOS integrated circuits;driver circuits;forward error correction;pulse amplitude modulation;silicon-on-insulator;transmitters;white noise;4-tap FIR filter;CEI-56G;CM driver;CMOS FDSOI;FEC schemes;HBM ESD diodes;IEEE P802.3bs standards;PAM-4 signaling;PAM-4 transmitter;SNR;SST drivers;amplitude distortion minimization;bit rate 400 Gbit/s;bit rate 45 Gbit/s;current 120 mA;current-mode drivers;differential peak-to-peak swing;duty-cycle correction;equalization tuning;forward error correction scheme;half-rate serializer;low-loss profiles;next-generation electrical link technology;serial interfaces;size 28 nm;source-series terminated drivers;transmitter output amplitude;voltage 1 V;voltage 1.4 V;voltage 1.5 V;while noise power;CMOS integrated circuits;Current measurement;Distortion measurement;Finite impulse response filters;Linearity;Optical transmitters;Semiconductor device measurement}, doi={10.1109/ISSCC.2016.7417909}, month={Jan},}`

### 2015

- M. Cignoli, G. Minoia, M. Repossi, D. Baldi, A. Ghilioni, E. Temporiti, and F. Svelto, “22.9 A 1310nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275mW multistage CMOS driver achieving 6dB extinction ratio at 25Gb/s,” in 2015 IEEE International Solid-State Circuits Conference – (ISSCC) Digest of Technical Papers, 2015, pp. 1-3.

[Bibtex]`@INPROCEEDINGS{7063103, author={M. Cignoli and G. Minoia and M. Repossi and D. Baldi and A. Ghilioni and E. Temporiti and F. Svelto}, booktitle={2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers}, title={22.9 A 1310nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275mW multistage CMOS driver achieving 6dB extinction ratio at 25Gb/s}, year={2015}, pages={1-3}, keywords={CMOS analogue integrated circuits;driver circuits;elemental semiconductors;integrated optics;integrated optoelectronics;optical transmitters;silicon;three-dimensional integrated circuits;3D-assembly;3D-integrated silicon photonics Mach-Zehnder-based transmitter;FEOL;PIC25G;STMicroelectronics 3Dcompatible silicon-photonics platform;Si;bit rate 25 Gbit/s;bulk CMOS technology;carrier depletion P-N junctions;copper pillars;depletion-mode MZM;dynamic extinction ratio;electronic IC;error-free operation;extinction ratio;front-end of line;interconnection parasitic capacitance;multistage CMOS driver;open optical eye diagrams;optical devices;photonic IC;power-efficient CMOS driver;silicon photonics electro-optical transmitter front-end;size 20 mum;size 65 nm;transmitter optical path;wavelength 1310 nm;CMOS integrated circuits;Delays;Erbium;Optical modulation;Optical transmitters;Silicon photonics}, doi={10.1109/ISSCC.2015.7063103}, ISSN={0193-6530}, month={Feb},}`

- J. Zhao, M. Bassi, A. Mazzanti, and F. Svelto, “A 15 GHz-bandwidth 20dBm PSAT power amplifier with 22% PAE in 65nm CMOS,” in Custom Integrated Circuits Conference (CICC), 2015 IEEE, 2015, pp. 1-4.

[Bibtex]`@INPROCEEDINGS{7338363, author={J. Zhao and M. Bassi and A. Mazzanti and F. Svelto}, booktitle={Custom Integrated Circuits Conference (CICC), 2015 IEEE}, title={A 15 GHz-bandwidth 20dBm PSAT power amplifier with 22% PAE in 65nm CMOS}, year={2015}, pages={1-4}, keywords={CMOS integrated circuits;IEEE standards;microwave amplifiers;microwave integrated circuits;power amplifiers;power combiners;CMOS;IEEE820.15;PAE;PSAT power amplifier;Wigig;bandwidth 15 GHz;coupled resonators;frequency 58.5 GHz to 73.5 GHz;gain 30 dB;gain-bandwidth product;power combiners;power splitters;size 65 nm;Bandwidth;Capacitors;Gain;Inductors;Power combiners;Power generation;Resonant frequency}, doi={10.1109/CICC.2015.7338363}, month={Sept},}`

- F. Radice, M. Bruccoleri, E. Mammei, M. Bassi, and A. Mazzanti, “A low-noise programmable-gain amplifier for 25 Gb/s multi-mode fiber receivers in 28nm CMOS FDSOI,” in European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 – 41st, 2015, pp. 160-163.

[Bibtex]`@INPROCEEDINGS{7313853, author={F. Radice and M. Bruccoleri and E. Mammei and M. Bassi and A. Mazzanti}, booktitle={European Solid-State Circuits Conference (ESSCIRC), ESSCIRC 2015 - 41st}, title={A low-noise programmable-gain amplifier for 25 Gb/s multi-mode fiber receivers in 28nm CMOS FDSOI}, year={2015}, pages={160-163}, keywords={CMOS integrated circuits;integrated optoelectronics;low noise amplifiers;optical fibre communication;optical receivers;wideband amplifiers;CMOS FDSOI;Nyquist frequency;bit rate 25 Gbit/s;finely adjustable amplifier;high gain amplifier;intersymbol interference;low noise programmable gain amplifier;multimode fiber receiver;power 32 mW;size 28 nm;very low noise amplifier;wide bandwidth amplifier;CMOS integrated circuits;Electronics packaging;Gain;Inductors;Noise;Receivers;Shunts (electrical)}, doi={10.1109/ESSCIRC.2015.7313853}, ISSN={1930-8833}, month={Sept},}`

- F. Loi, E. Mammei, F. Radice, M. Bruccoleri, S. Erba, M. Bassi, and A. Mazzanti, “A 25-Gb/s FIR equalizer based on highly linear all-pass delay-line stages in 28-nm LP CMOS,” in Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE, 2015, pp. 303-306.

[Bibtex]`@INPROCEEDINGS{7337765, author={F. Loi and E. Mammei and F. Radice and M. Bruccoleri and S. Erba and M. Bassi and A. Mazzanti}, booktitle={Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE}, title={A 25-Gb/s FIR equalizer based on highly linear all-pass delay-line stages in 28-nm LP CMOS}, year={2015}, pages={303-306}, keywords={CMOS integrated circuits;FIR filters;all-pass filters;delay lines;equalisers;radio receivers;radiofrequency integrated circuits;4-tap FIR equalizer;BER;FIR filters;LP CMOS;SNR;adaptation techniques;bit rate 25 Gbit/s;channel frequency response;current 25 mA;high speed wireline receivers;input signal amplitude;linear all-pass delay-line stages;loss 20 dB;loss channel;size 28 nm;voltage 1 V;voltage 900 mV;Adders;Bit error rate;CMOS integrated circuits;CMOS technology;CMOS;FIR;adaptive equalizer;all-pass;wireline}, doi={10.1109/RFIC.2015.7337765}, month={May},}`

- M. Bassi, J. Zhao, A. Bevilacqua, A. Ghilioni, A. Mazzanti, and F. Svelto, “A 40-67 GHz Power Amplifier With 13 dBm Psat and 16% PAE in 28 nm CMOS LP,” Solid-State Circuits, IEEE Journal of, vol. PP, iss. 99, pp. 1-11, 2015.

[Bibtex]`@ARTICLE{7065334, author={Bassi, M. and Zhao, J. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}, journal={Solid-State Circuits, IEEE Journal of}, title={A 40-67 GHz Power Amplifier With 13 dBm Psat and 16% PAE in 28 nm CMOS LP}, year={2015}, month={}, volume={PP}, number={99}, pages={1-11}, keywords={Bandwidth;CMOS integrated circuits;Capacitance;Impedance;Inductors;Power amplifiers;Power generation;Broadband amplifiers;CMOS integrated circuits;coupled resonators;gain-bandwidth product;millimeter wave integrated circuits;power amplifiers;resonator filters}, doi={10.1109/JSSC.2015.2409295}, ISSN={0018-9200} }`

- M. Cignoli, G. Minoia, M. Repossi, D. Baldi, A. Ghilioni, E. Temporiti, and F. Svelto, “A 1310nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275mW multistage CMOS driver achieving 6dB extinction ratio at 25Gb/s,” in Solid- State Circuits Conference – (ISSCC), 2015 IEEE International, 2015, pp. 1-3.

[Bibtex]`@INPROCEEDINGS{7063103, author={Cignoli, M. and Minoia, G. and Repossi, M. and Baldi, D. and Ghilioni, A. and Temporiti, E. and Svelto, F.}, booktitle={Solid- State Circuits Conference - (ISSCC), 2015 IEEE International}, title={A 1310nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275mW multistage CMOS driver achieving 6dB extinction ratio at 25Gb/s}, year={2015}, month={Feb}, pages={1-3}, keywords={CMOS analogue integrated circuits;driver circuits;elemental semiconductors;integrated optics;integrated optoelectronics;optical transmitters;silicon;three-dimensional integrated circuits;3D-assembly;3D-integrated silicon photonics Mach-Zehnder-based transmitter;FEOL;PIC25G;STMicroelectronics 3Dcompatible silicon-photonics platform;Si;bit rate 25 Gbit/s;bulk CMOS technology;carrier depletion P-N junctions;copper pillars;depletion-mode MZM;dynamic extinction ratio;electronic IC;error-free operation;extinction ratio;front-end of line;interconnection parasitic capacitance;multistage CMOS driver;open optical eye diagrams;optical devices;photonic IC;power-efficient CMOS driver;silicon photonics electro-optical transmitter front-end;size 20 mum;size 65 nm;transmitter optical path;wavelength 1310 nm;CMOS integrated circuits;Delays;Erbium;Optical modulation;Optical transmitters;Silicon photonics}, doi={10.1109/ISSCC.2015.7063103} }`

- M. Caruso, M. Bassi, A. Bevilacqua, and A. Neviani, “A 2-16 GHz 65 nm CMOS Stepped-Frequency Radar Transmitter With Harmonic Rejection for High-Resolution Medical Imaging Applications,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 62, iss. 2, pp. 413-422, 2015.

[Bibtex]`@ARTICLE{2015Caruso, author = {Caruso, M. and Bassi, M. and Bevilacqua, A. and Neviani, A.}, title = {A 2-16 GHz 65 nm CMOS Stepped-Frequency Radar Transmitter With Harmonic Rejection for High-Resolution Medical Imaging Applications}, journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on}, year = {2015}, volume = {62}, pages = {413-422}, number = {2}, month = {Feb}, doi = {10.1109/TCSI.2014.2362332}, issn = {1549-8328}, keywords = {CMOS integrated circuits;image resolution;jitter;medical image processing;oscillators;phase locked loops;radar imaging;radar receivers;radar transmitters;CMOS stepped-frequency radar transmitter;PLL;RMS jitter;frequency 2 GHz to 16 GHz;frequency 6.5 GHz to 18.4 GHz;harmonic rejection;harmonic rejection buffer;high-resolution medical imaging;inductorless injection-locked programmable divider;phase coherence;phase noise;quadrature downconversion;radar operation;receiver path;size 65 nm;stepped-frequency continuous wave short-range medical radar;Frequency conversion;Harmonic analysis;Phase locked loops;Radar imaging;Receivers;Transmitters;CMOS;UWB transmitter;frequency divider;frequency division;harmonic rejection;radar imaging;stepped frequency continuous wave (SFCW)}, timestamp = {2015.03.04} }`

- F. Svelto, A. Ghilioni, E. Monaco, E. Mammei, and A. Mazzanti, “The Impact of CMOS Scaling on the Design of Circuits for mm-Wave Frequency Synthesizers,” in High-Performance AD and DA Converters, IC Design in Scaled Technologies, and Time-Domain Signal Processing, P. Harpe, A. Baschirotto, and K. A. A. Makinwa, Eds., Springer International Publishing, 2015, pp. 233-252.

[Bibtex]`@INCOLLECTION{2015Svelto, author = {Svelto, Francesco and Ghilioni, Andrea and Monaco, Enrico and Mammei, Enrico and Mazzanti, Andrea}, title = {The Impact of CMOS Scaling on the Design of Circuits for mm-Wave Frequency Synthesizers}, booktitle = {High-Performance AD and DA Converters, IC Design in Scaled Technologies, and Time-Domain Signal Processing}, publisher = {Springer International Publishing}, year = {2015}, editor = {Harpe, Pieter and Baschirotto, Andrea and Makinwa, Kofi A. A.}, pages = {233-252}, doi = {10.1007/978-3-319-07938-7_10}, isbn = {978-3-319-07937-0}, language = {English}, timestamp = {2015.03.04}, url = {http://dx.doi.org/10.1007/978-3-319-07938-7_10} }`

### 2014

- D. Bianchi, F. Quaglia, A. Mazzanti, and F. Svelto, “Analysis and Design of a High Voltage Integrated Class-B Amplifier for Ultra-Sound Transducers,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 61, iss. 7, pp. 1942-1951, 2014.

[Bibtex]`@ARTICLE{2014Bianchi, author = {Bianchi, D. and Quaglia, F. and Mazzanti, A. and Svelto, F.}, title = {Analysis and Design of a High Voltage Integrated Class-B Amplifier for Ultra-Sound Transducers}, journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on}, year = {2014}, volume = {61}, pages = {1942-1951}, number = {7}, month = {July}, doi = {10.1109/TCSI.2014.2298284}, issn = {1549-8328}, keywords = {amplifiers;frequency response;integrated circuit design;linear network analysis;ultrasonic transducers;BCD technology;BCD6-SOI technology;apodization profiles;capacitance 150 pF;circuit analysis;device parameters;discrete technology approach;feedback loop;harmonic content;high voltage integrated class-B amplifier;high voltage trans-impedance stage;large signal frequency response;linear amplifiers;low-voltage transconductor;manufacturing costs;power 37 mW;resistance 100 ohm;signal amplitude;space occupation;transmit energy;ultra-sound applications;ultra-sound transducers;Bandwidth;Capacitance;Capacitors;Frequency response;Gain;Harmonic analysis;Impedance;BCD technology;class-B;descriptive function;high-voltage ICs;linear amplifier;ultrasound}, timestamp = {2015.03.04} }`

- D. Li, G. Minoia, M. Repossi, D. Baldi, E. Temporiti, A. Mazzanti, and F. Svelto, “A Low-Noise Design Technique for High-Speed CMOS Optical Receivers,” Solid-State Circuits, IEEE Journal of, vol. 49, iss. 6, pp. 1437-1447, 2014.

[Bibtex]`@ARTICLE{2014Li, author = {Dan Li and Minoia, G. and Repossi, M. and Baldi, D. and Temporiti, E. and Mazzanti, A. and Svelto, F.}, title = {A Low-Noise Design Technique for High-Speed CMOS Optical Receivers}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2014}, volume = {49}, pages = {1437-1447}, number = {6}, month = {June}, doi = {10.1109/JSSC.2014.2322868}, issn = {0018-9200}, keywords = {CMOS analogue integrated circuits;CMOS integrated circuits;integrated optoelectronics;operational amplifiers;optical receivers;photodiodes;100GBASE-LR4 standard;BiCMOS realizations;PRBS31 input pattern;TSFE;bit rate 25 Gbit/s;capacitance 160 pF;colored noise reduction;core first-stage amplifier;equalizer;high-speed CMOS optical receivers;limiting amplifier;low-noise design technique;low-noise narrowband transimpedance interface;low-noise wideband TIAs;net 4 Ă— noise power reduction;optical communications;photodiode;power consumption;size 65 nm;traditional shunt-feedback TIA;transimpedance amplifiers;two-stage front-end;white noise components;wideband output buffer;Bandwidth;CMOS integrated circuits;Capacitance;Equalizers;Gain;Noise;Optical receivers;CMOS technology;current reuse;equalization;input-referred noise;optical receivers;shunt-feedback;transimpedance amplifiers (TIA)}, timestamp = {2015.03.04} }`

- E. Mammei, F. Loi, F. Radice, A. Dati, M. Bruccoleri, M. Bassi, and A. Mazzanti, “8.3 A power-scalable 7-tap FIR equalizer with tunable active delay line for 10-to-25Gb/s multi-mode fiber EDC in 28nm LP-CMOS,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International, 2014, pp. 142-143.

[Bibtex]`@INPROCEEDINGS{2014Mammei, author = {Mammei, E. and Loi, F. and Radice, F. and Dati, A. and Bruccoleri, M. and Bassi, M. and Mazzanti, A.}, title = {8.3 A power-scalable 7-tap FIR equalizer with tunable active delay line for 10-to-25Gb/s multi-mode fiber EDC in 28nm LP-CMOS}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International}, year = {2014}, pages = {142-143}, month = {Feb}, doi = {10.1109/ISSCC.2014.6757373}, issn = {0193-6530}, keywords = {CMOS integrated circuits;FIR filters;equalisers;integrated optoelectronics;local area networks;low-power electronics;optical delay lines;optical fibre dispersion;optical pulse shaping;space division multiplexing;10GBASE-LRM standard;FIR filter;LAN;MMF;active delay line;bit rate 10 Gbit/s to 25 Gbit/s;channel response;electronic dispersion compensation;local area networks;low power CMOS;modal dispersion;multimode fiber EDC;nonlinear equalizer;power scalable 7-tap FIR equalizer;pulse shaping;signal processing;size 28 nm;space division multiplexing;CMOS integrated circuits;Delay lines;Equalizers;Finite impulse response filters;Optical fiber LAN;Optical fiber dispersion;Solid state circuits}, timestamp = {2015.03.04} }`

- E. Mammei, F. Loi, F. Radice, A. Dati, M. Bruccoleri, M. Bassi, and A. Mazzanti, “Analysis and Design of a Power-Scalable Continuous-Time FIR Equalizer for 10 Gb/s to 25 Gb/s Multi-Mode Fiber EDC in 28 nm LP CMOS,” Solid-State Circuits, IEEE Journal of, vol. 49, iss. 12, pp. 3130-3140, 2014.

[Bibtex]`@ARTICLE{2014Mammeia, author = {Mammei, E. and Loi, F. and Radice, F. and Dati, A. and Bruccoleri, M. and Bassi, M. and Mazzanti, A.}, title = {Analysis and Design of a Power-Scalable Continuous-Time FIR Equalizer for 10 Gb/s to 25 Gb/s Multi-Mode Fiber EDC in 28 nm LP CMOS}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2014}, volume = {49}, pages = {3130-3140}, number = {12}, month = {Dec}, doi = {10.1109/JSSC.2014.2345770}, issn = {0018-9200}, keywords = {CMOS integrated circuits;FIR filters;compensation;continuous time filters;equalisers;integrated optoelectronics;operational amplifiers;optical delay lines;optical fibre amplifiers;optical fibre dispersion;optical fibre filters;LP CMOS technology;active delay line elements;bit rate 10 Gbit/s to 25 Gbit/s;bit rate 400 Gbit/s;circuit topology;dispersion compensation;filter tap coefficients;input data-rate variation;input data-rates;multimode fiber EDC;multimode fiber links;power 55 mW to 90 mW;power efficiency;power-scalable continuous-time 7-tap FIR equalizer;programmable transconductors;size 28 nm;test chips;transimpedance amplifier;ultra-compact equalizer;CMOS integrated circuits;Delay lines;Delays;Equalizers;Finite impulse response filters;Gain;Noise;28 nm CMOS;FIR equalizer;all-pass;delay line;electronic dispersion compensation;multi-mode fiber}, timestamp = {2015.03.04} }`

- N. Sabatino, G. Minoia, M. Roche, D. Baldi, E. Temporiti, and A. Mazzanti, “A 5th order gm-C low-pass filter with +-3% cut-off frequency accuracy and 220MHz to 3.3GHz tuning-range in 28nm LP CMOS,” in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 – 40th, 2014, pp. 351-354.

[Bibtex]`@INPROCEEDINGS{2014Sabatino, author = {Sabatino, N. and Minoia, G. and Roche, M. and Baldi, D. and Temporiti, E. and Mazzanti, A.}, title = {A 5th order gm-C low-pass filter with +-3% cut-off frequency accuracy and 220MHz to 3.3GHz tuning-range in 28nm LP CMOS}, booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th}, year = {2014}, pages = {351-354}, month = {Sept}, doi = {10.1109/ESSCIRC.2014.6942094}, issn = {1930-8833}, keywords = {CMOS integrated circuits;UHF filters;UHF integrated circuits;VHF filters;calibration;field effect MMIC;integrated circuit design;low-pass filters;low-power electronics;microwave filters;power aware computing;5th order gm-C low-pass filter;LP CMOS technology;SNR;THD;calibration circuits;cut-off frequency accuracy;frequency 220 MHz to 3.3 GHz;gain control;integrator design;low power CMOS technology;master-slave approach;negative resistors;power 5 mW to 30 mW;power dissipation scaling;size 28 nm;transconductance}, timestamp = {2015.03.04} }`

- M. Sautto, D. Leone, A. Savoia, D. Ghisu, F. Quaglia, G. Caliano, and A. Mazzanti, “A CMUT transceiver front-end with 100-V TX driver and 1-mW low-noise capacitive feedback RX amplifier in BCD-SOI technology,” in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 – 40th, 2014, pp. 407-410.

[Bibtex]`@INPROCEEDINGS{2014Sautto, author = {Sautto, M. and Leone, D. and Savoia, A. and Ghisu, D. and Quaglia, F. and Caliano, G. and Mazzanti, A.}, title = {A CMUT transceiver front-end with 100-V TX driver and 1-mW low-noise capacitive feedback RX amplifier in BCD-SOI technology}, booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th}, year = {2014}, pages = {407-410}, month = {Sept}, doi = {10.1109/ESSCIRC.2014.6942108}, issn = {1930-8833}, keywords = {biomedical imaging;biomedical ultrasonics;capacitive sensors;feedback amplifiers;microsensors;portable instruments;transceivers;ultrasonic imaging;ultrasonic transducers;BCD-SOI technology;CMUT transceiver front-end;SNR degradation;TX driver;capacitive micromachined ultrasound transducers;circuit techniques;electrical characterization;frequency 1 MHz to 15 MHz;high performance portable ultrasound medical imaging;high voltage T/R switch;high-voltage devices;low-noise capacitive feedback RX amplifier;noise-power performance;parasitic capacitances;power 1 mW;pulse-echo measurements;trans-resistance topology;transceiver;ultra-low-power RX amplifier;voltage 100 V;Capacitance;Imaging;Noise;Switches;Transceivers;Transducers;Ultrasonic imaging}, timestamp = {2015.03.04} }`

- A. S. Savoia, G. Caliano, A. Mazzanti, M. Sautto, A. D. Leone, D. U. Ghisu, and F. Quaglia, “An ultra-low-power fully integrated ultrasound imaging CMUT transceiver featuring a high-voltage unipolar pulser and a low-noise charge amplifier,” in Ultrasonics Symposium (IUS), 2014 IEEE International, 2014, pp. 2568-2571.

[Bibtex]`@INPROCEEDINGS{2014Savoia, author = {Savoia, A.S. and Caliano, G. and Mazzanti, A. and Sautto, M. and Leone, A.D. and Ghisu, D.U. and Quaglia, F.}, title = {An ultra-low-power fully integrated ultrasound imaging CMUT transceiver featuring a high-voltage unipolar pulser and a low-noise charge amplifier}, booktitle = {Ultrasonics Symposium (IUS), 2014 IEEE International}, year = {2014}, pages = {2568-2571}, month = {Sept}, doi = {10.1109/ULTSYM.2014.0641}, keywords = {biomedical electronics;biomedical transducers;biomedical ultrasonics;integrated circuits;power consumption;ultrasonic imaging;ultrasonic transducers;1D CMUT linear arrays;BCD-SOI technology;ST microelectronics;T-R switching;capacitive feedback topology;frequency 1 MHz to 15 MHz;high-voltage unipolar pulser;low parasitic resistance;low-noise charge amplifier;low-power analog frontend circuit;medical imaging applications;noise-power performance;parasitic capacitance;power consumption;trans-resistance topology;ultralow-power fully integrated ultrasound imaging CMUT transceiver;Acoustics;Biomedical imaging;Power demand;Transceivers;Ultrasonic imaging;Voltage measurement;CMUT;capacitive micromachined ultrasonic transducers;charge amplifier;integrated circuit;low-power;unipolar pulser}, timestamp = {2015.03.04} }`

- E. Temporiti, G. Minoia, M. Repossi, D. Baldi, A. Ghilioni, and F. Svelto, “A 3D-integrated 25Gbps silicon photonics receiver in PIC25G and 65nm CMOS technologies,” in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 – 40th, 2014, pp. 131-134.

[Bibtex]`@INPROCEEDINGS{2014Temporiti, author = {Temporiti, E. and Minoia, G. and Repossi, M. and Baldi, D. and Ghilioni, A. and Svelto, F.}, title = {A 3D-integrated 25Gbps silicon photonics receiver in PIC25G and 65nm CMOS technologies}, booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th}, year = {2014}, pages = {131-134}, month = {Sept}, doi = {10.1109/ESSCIRC.2014.6942039}, issn = {1930-8833}, keywords = {CMOS integrated circuits;copper;elemental semiconductors;integrated optics;integrated optoelectronics;optical interconnections;optical waveguides;photodiodes;silicon;3D-compatible silicon photonics platform;3D-integrated silicon photonics receiver;BER;CMOS amplification chain;CMOS technologies;Cu;Ge;PIC25G;STMicroelectronics;Si;bit rate 25 Gbit/s;copper pillars;germanium photodiode;integrated photonics;integrated waveguide;optical devices;optical interconnects;optical power sensitivity;optoelectronic receiver;photonics integrated circuits;size 65 nm;wavelength 1310 nm;CMOS integrated circuits;Copper;Optical receivers;Optical sensors;Sensitivity;Silicon photonics;3D integration;PIC;Silicon photonics;copper pillars;optical receiver;sensitivity}, timestamp = {2015.03.04} }`

- J. Zhao, M. Bassi, A. Bevilacqua, A. Ghilioni, A. Mazzanti, and F. Svelto, “A 40-67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP,” in European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 – 40th, 2014, pp. 179-182.

[Bibtex]`@INPROCEEDINGS{2014Zhao, author = {Junlei Zhao and Bassi, M. and Bevilacqua, A. and Ghilioni, A. and Mazzanti, A. and Svelto, F.}, title = {A 40-67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP}, booktitle = {European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th}, year = {2014}, pages = {179-182}, month = {Sept}, doi = {10.1109/ESSCIRC.2014.6942051}, issn = {1930-8833}, keywords = {CMOS analogue integrated circuits;differential amplifiers;field effect MIMIC;impedance matching;low-power electronics;millimetre wave power amplifiers;millimetre wave resonators;wideband amplifiers;CMOS LP;Norton transformations;PAE;PSAT;efficiency 16 percent;frequency 40 GHz to 67 GHz;impedance matching;low-power devices;mm-wave PAs;neutralized common source stages;output matching networks;size 28 nm;two-stage differential PA;wideband inductively coupled resonators;wideband power amplifiers;wireless applications;Bandwidth;CMOS integrated circuits;Gain;Impedance;Impedance matching;Inductors;Power generation}, timestamp = {2015.03.04} }`

### 2013

- M. Bassi, M. Caruso, A. Bevilacqua, and A. Neviani, “A 65-nm CMOS 1.75-15 GHz Stepped Frequency Radar Receiver for Early Diagnosis of Breast Cancer,” Solid-State Circuits, IEEE Journal of, vol. 48, iss. 7, pp. 1741-1750, 2013.

[Bibtex]`@ARTICLE{2013Bassi, author = {Bassi, M. and Caruso, M. and Bevilacqua, A. and Neviani, A.}, title = {A 65-nm CMOS 1.75-15 GHz Stepped Frequency Radar Receiver for Early Diagnosis of Breast Cancer}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2013}, volume = {48}, pages = {1741-1750}, number = {7}, month = {July}, doi = {10.1109/JSSC.2013.2253234}, issn = {0018-9200}, keywords = {CMOS integrated circuits;biological organs;cancer;flicker noise;microwave imaging;radar receivers;CMOS;I-Q phase error;breast cancer diagnostic imaging;flicker noise corner;frequency 1.75 GHz to 15 GHz;microwave radar imaging;programmable injection-locked divider;quadrature LO signals;stepped frequency radar receiver;Bandwidth;Breast;CMOS integrated circuits;Mixers;Noise;Radar;Receivers;CMOS;UWB receiver;radar imaging}, timestamp = {2015.03.04} }`

- M. Bassi, M. Caruso, M. S. Khan, A. Bevilacqua, A. Capobianco, and A. Neviani, “An Integrated Microwave Imaging Radar With Planar Antennas for Breast Cancer Detection,” Microwave Theory and Techniques, IEEE Transactions on, vol. 61, iss. 5, pp. 2108-2118, 2013.

[Bibtex]`@ARTICLE{2013Bassia, author = {Bassi, M. and Caruso, M. and Khan, M.S. and Bevilacqua, A. and Capobianco, A. and Neviani, A.}, title = {An Integrated Microwave Imaging Radar With Planar Antennas for Breast Cancer Detection}, journal = {Microwave Theory and Techniques, IEEE Transactions on}, year = {2013}, volume = {61}, pages = {2108-2118}, number = {5}, month = {May}, doi = {10.1109/TMTT.2013.2247052}, issn = {0018-9480}, keywords = {CMOS integrated circuits;biological organs;biomedical electronics;biomedical equipment;biomedical imaging;cancer;microstrip antennas;microwave imaging;phantoms;planar antenna arrays;radar imaging;tumours;CMOS technology;breast cancer diagnostic screening;frequency 2 GHz to 16 GHz;frequency range;imaging experiments;integrated circuit;integrated microwave imaging radar;patch antennas;planar antennas;planar laminate;realistic breast phantom;size 67 nm;tumor target detection;Imaging;Radar antennas;Radar imaging;Receivers;Transceivers;Tumors;Biomedical image processing;CMOS integrated circuits;RF integrated circuits;cancer detection;radar imaging}, timestamp = {2015.03.04} }`

- D. Bianchi, F. Quaglia, A. Mazzanti, and F. Svelto, “High-voltage integrated Class-B amplifier for ultrasound transducers,” in IC Design Technology (ICICDT), 2013 International Conference on, 2013, pp. 105-108.

[Bibtex]`@INPROCEEDINGS{2013Bianchi, author = {Bianchi, D. and Quaglia, F. and Mazzanti, A. and Svelto, F.}, title = {High-voltage integrated Class-B amplifier for ultrasound transducers}, booktitle = {IC Design Technology (ICICDT), 2013 International Conference on}, year = {2013}, pages = {105-108}, month = {May}, doi = {10.1109/ICICDT.2013.6563314}, keywords = {BIMOS integrated circuits;UHF integrated circuits;UHF power amplifiers;feedback amplifiers;power integrated circuits;ultrasonic imaging;ultrasonic transducers;BCD technology;BCD-6 SOI;Watts level;apodization profiles;circuit analysis;feedback amplifier;frequency 5.5 MHz;gain 40.9 dB;high-voltage high-efficiency class-B output stage;high-voltage integrated class-B amplifier;high-voltage linear amplifiers;large-signal frequency response;power 37 mW;quiescent power dissipation;signal amplitude;ultrasound imaging;ultrasound transducers;voltage 90 V;Capacitance;Capacitors;Frequency response;Harmonic analysis;Imaging;Impedance;Ultrasonic imaging;BCD technology;class-B;descriptive function;high-voltage ICs;linear amplifier;ultrasound}, timestamp = {2015.03.04} }`

- M. Caruso, M. Bassi, A. Bevilacqua, and A. Neviani, “Wideband 2-16GHz local oscillator generation for short-range radar applications,” in ESSCIRC (ESSCIRC), 2013 Proceedings of the, 2013, pp. 49-52.

[Bibtex]`@INPROCEEDINGS{2013Caruso, author = {Caruso, M. and Bassi, M. and Bevilacqua, A. and Neviani, A.}, title = {Wideband 2-16GHz local oscillator generation for short-range radar applications}, booktitle = {ESSCIRC (ESSCIRC), 2013 Proceedings of the}, year = {2013}, pages = {49-52}, month = {Sept}, doi = {10.1109/ESSCIRC.2013.6649069}, issn = {1930-8833}, keywords = {CMOS integrated circuits;UHF oscillators;field effect MMIC;frequency dividers;jitter;microwave oscillators;radar;CMOS LO generation system;PLL;RMS jitter;frequency 2 GHz to 18.4 GHz;injection-locked programmable divider;phase noise;quadrature signals;short-range radar applications;size 65 nm;time 2 mus;wideband local oscillator generation;Frequency conversion;Frequency measurement;Phase locked loops;Phase noise;Ring oscillators;Tuning;Wideband}, timestamp = {2015.03.04} }`

- M. Caruso, M. Bassi, A. Bevilacqua, and A. Neviani, “A 2-to-16GHz 204mW 3mm-resolution stepped-frequency radar for breast-cancer diagnostic imaging in 65nm CMOS,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International, 2013, pp. 240-241.

[Bibtex]`@INPROCEEDINGS{2013Carusoa, author = {Caruso, M. and Bassi, M. and Bevilacqua, A. and Neviani, A.}, title = {A 2-to-16GHz 204mW 3mm-resolution stepped-frequency radar for breast-cancer diagnostic imaging in 65nm CMOS}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International}, year = {2013}, pages = {240-241}, month = {Feb}, doi = {10.1109/ISSCC.2013.6487717}, issn = {0193-6530}, keywords = {CMOS analogue integrated circuits;antenna arrays;cancer;image resolution;medical image processing;millimetre wave radar;radar antennas;radar imaging;ultra wideband radar;VNA;antenna array arrangement;breast cancer diagnostic imaging;early-stage breast cancer detection;electrical properties;frequency 2 GHz to 16 GHz;industrial application;medical application;medical radar imaging;mm-range resolution;mm-waves;power 204 mW;scattered energy;security application;silicon technologies;size 65 nm;stepped-frequency radar;tumor cells;ultrawideband radars;Harmonic analysis;Imaging;Mixers;Noise measurement;Power harmonic filters;Radar imaging}, timestamp = {2015.03.04} }`

- A. Ghilioni, A. Mazzanti, and F. Svelto, “Analysis and Design of mm-Wave Frequency Dividers Based on Dynamic Latches With Load Modulation,” Solid-State Circuits, IEEE Journal of, vol. 48, iss. 8, pp. 1842-1850, 2013.

[Bibtex]`@ARTICLE{2013Ghilioni, author = {Ghilioni, A. and Mazzanti, A. and Svelto, F.}, title = {Analysis and Design of mm-Wave Frequency Dividers Based on Dynamic Latches With Load Modulation}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2013}, volume = {48}, pages = {1842-1850}, number = {8}, month = {Aug}, doi = {10.1109/JSSC.2013.2258793}, issn = {0018-9200}, keywords = {CMOS integrated circuits;flip-flops;frequency dividers;inspection;low-power electronics;time-domain analysis;bulk CMOS;date injection locked topologies;dynamic latches;hold times;load modulation;maximum charge retention;maximum operation frequency;minimum operation frequency;mm-wave frequency dividers;power 4.8 mW;size 32 nm;static CML latches;time-domain circuit inspection;transceivers;wideband low-power frequency dividers;Clocks;Frequency conversion;Frequency modulation;Latches;Resistance;Switches;Time-frequency analysis;CMOS technology;frequency divider;integrated circuits modeling;low power electronics;millimeter wave analog integrated circuits;wideband}, timestamp = {2015.03.04} }`

- E. Mammei, E. Monaco, A. Mazzanti, and F. Svelto, “A 33.6-to-46.2GHz 32nm CMOS VCO with 177.5dBc/Hz minimum noise FOM using inductor splitting for tuning extension,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International, 2013, pp. 350-351.

[Bibtex]`@INPROCEEDINGS{2013Mammei, author = {Mammei, E. and Monaco, E. and Mazzanti, A. and Svelto, F.}, title = {A 33.6-to-46.2GHz 32nm CMOS VCO with 177.5dBc/Hz minimum noise FOM using inductor splitting for tuning extension}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International}, year = {2013}, pages = {350-351}, month = {Feb}, doi = {10.1109/ISSCC.2013.6487765}, issn = {0193-6530}, keywords = {CMOS integrated circuits;Q-factor;field effect MIMIC;inductors;millimetre wave oscillators;phase noise;voltage-controlled oscillators;CMOS VCO;MOM capacitors;RF thick metal;capacitor switched bank;equivalent tank inductance;frequency 33.6 GHz to 46.2 GHz;frequency 57 GHz to 66 GHz;inductor splitting;low-noise on-chip oscillator;magnetic tuning methods;minimum noise FOM;parasitic capacitance;passive components;power 9.8 mW;power dissipation;reduced quality factor;resonance frequencies;secondary coil impedance;signal integrity;signal processing;size 32 nm;size 65 nm;stringent reference phase noise;switched-capacitor tank;transformer;transistor;tuning extension;ultrascaled CMOS technology node;ultrascaled standard digital CMOS technology;ultrawide tuning range;wireless transceivers;CMOS integrated circuits;Capacitors;Inductors;Phase noise;Switches;Tuning;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- A. Mazzanti and P. Andreani, “A Push-Pull Class-C CMOS VCO,” Solid-State Circuits, IEEE Journal of, vol. 48, iss. 3, pp. 724-732, 2013.

[Bibtex]`@ARTICLE{2013Mazzanti, author = {Mazzanti, A. and Andreani, P.}, title = {A Push-Pull Class-C CMOS VCO}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2013}, volume = {48}, pages = {724-732}, number = {3}, month = {March}, doi = {10.1109/JSSC.2012.2230542}, issn = {0018-9200}, keywords = {CMOS integrated circuits;MMIC oscillators;MOSFET;field effect MMIC;phase noise;triodes;voltage-controlled oscillators;CMOS oscillator;complementary topology;deep triode region;differential transistor;figure-of-merit;frequency 6.09 GHz to 7.50 GHz;instantaneous resonator voltage;nMOS transistors;pMOS transistors;phase-noise performance;power 2.2 mW;push-pull class-C CMOS VCO;size 0.18 mum;voltage-controlled oscillator;MOSFETs;Phase noise;Voltage-controlled oscillators;CMOS;Class-C;phase noise;pushâ€“pull;voltage controlled oscillator (VCO)}, timestamp = {2015.03.04} }`

- F. Radice, M. Bruccoleri, M. Ganzerli, G. Spelgatti, D. Sanzogni, M. Pozzoni, and A. Mazzanti, “A 6-bit 6-GS/s 95mW background calibrated flash ADC with integrating preamplifiers and half-rate comparators in 32nm LP CMOS,” in ESSCIRC (ESSCIRC), 2013 Proceedings of the, 2013, pp. 129-132.

[Bibtex]`@INPROCEEDINGS{2013Radice, author = {Radice, F. and Bruccoleri, M. and Ganzerli, M. and Spelgatti, G. and Sanzogni, D. and Pozzoni, M. and Mazzanti, A.}, title = {A 6-bit 6-GS/s 95mW background calibrated flash ADC with integrating preamplifiers and half-rate comparators in 32nm LP CMOS}, booktitle = {ESSCIRC (ESSCIRC), 2013 Proceedings of the}, year = {2013}, pages = {129-132}, month = {Sept}, doi = {10.1109/ESSCIRC.2013.6649089}, issn = {1930-8833}, keywords = {CMOS integrated circuits;analogue-digital conversion;comparators (circuits);integrating circuits;low-power electronics;preamplifiers;Nyquist frequency input;SNDR degradation;background calibrated flash ADC;front-end offsets;gain-bandwidth requirements;half-rate comparators;integrating preamplifiers;low power CMOS technology;lower power dissipation;power 95 mW;single-stage integrators;size 32 nm;voltage 1 V;word length 6 bit;CMOS integrated circuits;CMOS technology;Calibration;Clocks;Power dissipation;Preamplifiers;Signal resolution}, timestamp = {2015.03.04} }`

### 2012

- M. Bassi, A. Bevilacqua, A. Gerosa, and A. Neviani, “Integrated SFCW Transceivers for UWB Breast Cancer Imaging: Architectures and Circuit Constraints,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 59, iss. 6, pp. 1228-1241, 2012.

[Bibtex]`@ARTICLE{2012Bassi, author = {Bassi, M. and Bevilacqua, A. and Gerosa, A. and Neviani, A.}, title = {Integrated SFCW Transceivers for UWB Breast Cancer Imaging: Architectures and Circuit Constraints}, journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on}, year = {2012}, volume = {59}, pages = {1228-1241}, number = {6}, month = {June}, doi = {10.1109/TCSI.2011.2173400}, issn = {1549-8328}, keywords = {CW radar;biomedical imaging;mammography;microwave imaging;radar imaging;ultra wideband radar;FDTD simulation;SFCW radar system;UWB breast cancer imaging;architecture constraint;circuit constraint;critical circuit impairment;direct conversion architecture;integrated SFCW transceiver;local oscillator;numerical breast phantom;stepped frequency continuous wave radar;super heterodyne architecture;transceiver architectures;Antenna arrays;Arrays;Breast;Receivers;Transceivers;Tumors;Breast cancer detection;CMOS;UWB;direct conversion;super heterodyne}, timestamp = {2015.03.04} }`

- M. Bassi, M. Caruso, A. Bevilacqua, and A. Neviani, “A 1.75-15 GHz stepped frequency receiver for breast cancer imaging in 65 nm CMOS,” in ESSCIRC (ESSCIRC), 2012 Proceedings of the, 2012, pp. 353-356.

[Bibtex]`@INPROCEEDINGS{2012Bassia, author = {Bassi, M. and Caruso, M. and Bevilacqua, A. and Neviani, A.}, title = {A 1.75-15 GHz stepped frequency receiver for breast cancer imaging in 65 nm CMOS}, booktitle = {ESSCIRC (ESSCIRC), 2012 Proceedings of the}, year = {2012}, pages = {353-356}, month = {Sept}, doi = {10.1109/ESSCIRC.2012.6341327}, issn = {1930-8833}, keywords = {CMOS integrated circuits;biomedical imaging;cancer;flicker noise;frequency dividers;microwave imaging;microwave receivers;CMOS;I-Q phase error;UWB microwave imaging;breast cancer diagnostic imaging;flicker noise corner;frequency 1.75 GHz to 15 GHz;frequency receiver;noise figure 106 dB;programmable injection-locked divider;quadrature LO signal;size 65 nm;Bandwidth;Breast cancer;Imaging;Mixers;Noise;Noise measurement;Receivers}, timestamp = {2015.03.04} }`

- D. Bianchi, F. Quaglia, A. Mazzanti, and F. Svelto, “A 90Vpp 720MHz GBW linear power amplifier for ultrasound imaging transmitters in BCD6-SOI,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International, 2012, pp. 370-372.

[Bibtex]`@INPROCEEDINGS{2012Bianchi, author = {Bianchi, D. and Quaglia, F. and Mazzanti, A. and Svelto, F.}, title = {A 90Vpp 720MHz GBW linear power amplifier for ultrasound imaging transmitters in BCD6-SOI}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International}, year = {2012}, pages = {370-372}, month = {Feb}, doi = {10.1109/ISSCC.2012.6177054}, issn = {0193-6530}, keywords = {power amplifiers;ultrasonic imaging;BCD6-SOI;EM interference reduction;GBW linear power amplifier;apodization profiles;frequency 720 MHz;harmonic imaging;integrated amplifier topologies;pulse transmission technique;reliability improvement;transducer drivers;ultrasound imaging transmitters;waveform generators;Harmonic analysis;Harmonic distortion;Imaging;Impedance;Power amplifiers;Ultrasonic imaging;Voltage measurement}, timestamp = {2015.03.04} }`

- A. Ghilioni, U. Decanis, A. Mazzanti, and F. Svelto, “A 4.8mW inductorless CMOS frequency divider-by-4 with more than 60% fractional bandwidth up to 70GHz,” in Custom Integrated Circuits Conference (CICC), 2012 IEEE, 2012, pp. 1-4.

[Bibtex]`@INPROCEEDINGS{2012Ghilioni, author = {Ghilioni, A. and Decanis, U. and Mazzanti, A. and Svelto, F.}, title = {A 4.8mW inductorless CMOS frequency divider-by-4 with more than 60% fractional bandwidth up to 70GHz}, booktitle = {Custom Integrated Circuits Conference (CICC), 2012 IEEE}, year = {2012}, pages = {1-4}, month = {Sept}, doi = {10.1109/CICC.2012.6330595}, issn = {0886-5930}, keywords = {CMOS integrated circuits;differential amplifiers;frequency dividers;frequency synthesizers;bandwidth 14 GHz to 70 GHz;clocked differential amplifiers;dynamic CML latches;fractional bandwidth;frequency synthesizers;inductorless CMOS frequency divider-by-4;large division factors;load resistance;power 4.8 mW;size 32 nm;tail current;wide-band low-power dividers;Bandwidth;CMOS integrated circuits;Clocks;Frequency conversion;Latches;Power demand;Resistance;Frequency divider and CMOS technology;Low power electronics;Millimeter wave circuits;Wideband}, timestamp = {2015.03.04} }`

- A. Ghilioni, E. Monaco, M. Repossi, and A. Mazzanti, “A 5mW CMOS wideband mm-wave front-end featuring 17dB of conversion gain and 6.5 dB minimum NF,” in Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE, 2012, pp. 447-450.

[Bibtex]`@INPROCEEDINGS{2012Ghilionia, author = {Ghilioni, A. and Monaco, E. and Repossi, M. and Mazzanti, A.}, title = {A 5mW CMOS wideband mm-wave front-end featuring 17dB of conversion gain and 6.5 dB minimum NF}, booktitle = {Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE}, year = {2012}, pages = {447-450}, month = {June}, doi = {10.1109/RFIC.2012.6242319}, issn = {1529-2517}, keywords = {CMOS analogue integrated circuits;MMIC amplifiers;field effect MMIC;low noise amplifiers;microwave resonators;CMOS stand-alone LNA;CMOS wideband mm-wave front-end;current to voltage conversion;frequency 18.5 GHz;front-end noise figure;gain 17 dB;intermediate frequency;low-noise amplifiers;mixer;mm-wave signal;noise figure 6.5 dB;passive components;phased arrays;power 5 mW;power dissipation;quality factor;resonator impedance magnitude;size 65 nm;test chips;wireless data transfers;CMOS integrated circuits;Gain;Mixers;Noise;Noise figure;Radio frequency;CMOS technology;Low-noise amplifiers;Millimeter wave integrated circuits;mixers;phased arrays}, timestamp = {2015.03.04} }`

- D. Li, G. Minoia, M. Repossi, D. Baldi, E. Temporiti, A. Mazzanti, and F. Svelto, “A 25Gb/s low noise 65nm CMOS receiver tailored to 100GBASE-LR4,” in ESSCIRC (ESSCIRC), 2012 Proceedings of the, 2012, pp. 221-224.

[Bibtex]`@INPROCEEDINGS{2012Li, author = {Dan Li and Minoia, G. and Repossi, M. and Baldi, D. and Temporiti, E. and Mazzanti, A. and Svelto, F.}, title = {A 25Gb/s low noise 65nm CMOS receiver tailored to 100GBASE-LR4}, booktitle = {ESSCIRC (ESSCIRC), 2012 Proceedings of the}, year = {2012}, pages = {221-224}, month = {Sept}, doi = {10.1109/ESSCIRC.2012.6341298}, issn = {1930-8833}, keywords = {CMOS integrated circuits;buffer circuits;equalisers;integrated circuit noise;mean square error methods;operational amplifiers;optical receivers;power consumption;bandwidth 10 GHz to 18.2 GHz;bit rate 25 Gbit/s;buffer;current 2.44 muA;electrical analog bandwidth;equalizer;equivalent rms noise current;limiting amplifier;low noise CMOS receiver;low noise narrow-band TIA;noise power reduction;power 93 mW;power consumption;shunt-feedback;size 65 nm;trade-off;two stage front-end;Bandwidth;CMOS integrated circuits;Equalizers;Noise;Optical fiber amplifiers;Radio frequency;Receivers}, timestamp = {2015.03.04} }`

### 2011

- M. Bassi, A. Bevilacqua, A. Gerosa, and A. Neviani, “Integrated transceivers for UWB breast cancer imaging: Architecture and circuit constraints,” in Circuits and Systems (ISCAS), 2011 IEEE International Symposium on, 2011, pp. 2087-2090.

[Bibtex]`@INPROCEEDINGS{2011Bassi, author = {Bassi, M. and Bevilacqua, A. and Gerosa, A. and Neviani, A.}, title = {Integrated transceivers for UWB breast cancer imaging: Architecture and circuit constraints}, booktitle = {Circuits and Systems (ISCAS), 2011 IEEE International Symposium on}, year = {2011}, pages = {2087-2090}, month = {May}, doi = {10.1109/ISCAS.2011.5938009}, issn = {0271-4302}, keywords = {cancer;finite difference time-domain analysis;heterodyne detection;microwave imaging;phantoms;transceivers;ultra wideband radar;FDTD simulations data;RX local oscillators;SFCW radar system;TX local oscillators;UWB breast cancer imaging;architecture constraints;behavioral analysis;circuit constraints;direct conversion;integrated transceivers;mathematical model;numerical breast phantom;random phase mismatches;super heterodyne architectures;Antenna arrays;Breast;Delta modulation;Receivers;Skin;Tumors}, timestamp = {2015.03.04} }`

- U. Decanis, A. Ghilioni, E. Monaco, A. Mazzanti, and F. Svelto, “A Low-Noise Quadrature VCO Based on Magnetically Coupled Resonators and a Wideband Frequency Divider at Millimeter Waves,” Solid-State Circuits, IEEE Journal of, vol. 46, iss. 12, pp. 2943-2955, 2011.

[Bibtex]`@ARTICLE{2011Decanis, author = {Decanis, U. and Ghilioni, A. and Monaco, E. and Mazzanti, A. and Svelto, F.}, title = {A Low-Noise Quadrature VCO Based on Magnetically Coupled Resonators and a Wideband Frequency Divider at Millimeter Waves}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2011}, volume = {46}, pages = {2943-2955}, number = {12}, month = {Dec}, doi = {10.1109/JSSC.2011.2162468}, issn = {0018-9200}, keywords = {CMOS integrated circuits;differential amplifiers;field effect MIMIC;frequency dividers;millimetre wave frequency convertors;millimetre wave oscillators;phase noise;voltage-controlled oscillators;CMOS process;MIMIC;clocked differential amplifiers;current 22 mA;frequency 56 GHz to 60.4 GHz;inter-stage passive components;low-noise quadrature VCO;magnetically coupled resonators;phase error;phase noise;phased-array systems;power 6.5 mW;size 65 nm;voltage 1 V;wideband frequency divider;wireless on-chip processing;Couplings;Frequency conversion;Phase noise;Resonant frequency;Voltage-controlled oscillators;CMOS;direct conversion;frequency divider;low phase noise;low-$k$ transformer;millimeter wave;quadrature voltage-controlled oscillator (VCO)}, timestamp = {2015.03.04} }`

- U. Decanis, A. Ghilioni, E. Monaco, A. Mazzanti, and F. Svelto, “A mm-Wave quadrature VCO based on magnetically coupled resonators,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International, 2011, pp. 280-282.

[Bibtex]`@INPROCEEDINGS{2011Decanisa, author = {Decanis, U. and Ghilioni, A. and Monaco, E. and Mazzanti, A. and Svelto, F.}, title = {A mm-Wave quadrature VCO based on magnetically coupled resonators}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International}, year = {2011}, pages = {280-282}, month = {Feb}, doi = {10.1109/ISSCC.2011.5746318}, issn = {0193-6530}, keywords = {1/f noise;CMOS integrated circuits;resonators;voltage-controlled oscillators;1/f noise;CMOS technology;compact quadrature generator;cross-coupled LC voltage-controlled oscillator;current 22 mA;dividers;double-frequency VCO;frequency 1 MHz;frequency 56 GHz to 60.3 GHz;magnetically coupled resonator;mm-wave quadrature VCO;size 65 nm;voltage 1 V;CMOS integrated circuits;Phase noise;Resonant frequency;Solid state circuits;Tuning;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- A. Ghilioni, U. Decanis, E. Monaco, A. Mazzanti, and F. Svelto, “A 6.5mW inductorless CMOS frequency divider-by-4 operating up to 70GHz,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International, 2011, pp. 282-284.

[Bibtex]`@INPROCEEDINGS{2011Ghilioni, author = {Ghilioni, A. and Decanis, U. and Monaco, E. and Mazzanti, A. and Svelto, F.}, title = {A 6.5mW inductorless CMOS frequency divider-by-4 operating up to 70GHz}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International}, year = {2011}, pages = {282-284}, month = {Feb}, doi = {10.1109/ISSCC.2011.5746319}, issn = {0193-6530}, keywords = {CMOS integrated circuits;current-mode logic;differential amplifiers;field effect MIMIC;flip-flops;frequency dividers;injection locked oscillators;integrated circuit interconnections;optical communication;radio transceivers;synchronisation;clock synchronization;clocked differential amplifiers;digital calibration;inductorless CMOS frequency divider;injection locking;injection-locked oscillators;integrated circuit interconnections;mm-wave dividers;nanometer-scale CMOS technology;optical communications;power 6.5 mW;radio frequency application;size 65 nm;static CML latches;wireless transceivers;CMOS integrated circuits;Capacitors;Clocks;Frequency conversion;Latches;Noise measurement;Time frequency analysis}, timestamp = {2015.03.04} }`

- A. Mazzanti, M. Sosio, M. Repossi, and F. Svelto, “A 24 GHz Subharmonic Direct Conversion Receiver in 65 nm CMOS,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 58, iss. 1, pp. 88-97, 2011.

[Bibtex]`@ARTICLE{2011Mazzanti, author = {Mazzanti, A. and Sosio, M. and Repossi, M. and Svelto, F.}, title = {A 24 GHz Subharmonic Direct Conversion Receiver in 65 nm CMOS}, journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on}, year = {2011}, volume = {58}, pages = {88-97}, number = {1}, month = {Jan}, doi = {10.1109/TCSI.2010.2071711}, issn = {1549-8328}, keywords = {CMOS integrated circuits;low-power electronics;microwave switches;millimetre wave oscillators;millimetre wave receivers;transceivers;forward signal paths;frequency 24 GHz;gain;gain 30.5 dB;gain 6.7 dB;half frequency operation;integrated LNA matching network;local oscillator;microwaves;millimeter waves;optimum biasing;phased array systems;power 78 mW;power consumption;return signal paths;scaled CMOS;sensitivity;single-ended topology;stacked switches;subharmonic direct conversion receiver;subharmonic down-conversion;transceiver IC;transceivers;transresistance amplifier;CMOS integrated circuits;Capacitors;Impedance matching;Inductors;Mixers;Noise;Receivers;CMOS;LNA;integrated circuits;millimeter waves;receivers;subharmonic mixers}, timestamp = {2015.03.04} }`

- F. Vecchi, S. Bozzola, E. Temporiti, D. Guermandi, M. Pozzoni, M. Repossi, M. Cusmai, U. Decanis, A. Mazzanti, and F. Svelto, “A Wideband Receiver for Multi-Gbit/s Communications in 65 nm CMOS,” Solid-State Circuits, IEEE Journal of, vol. 46, iss. 3, pp. 551-561, 2011.

[Bibtex]`@ARTICLE{2011Vecchi, author = {Vecchi, F. and Bozzola, S. and Temporiti, E. and Guermandi, D. and Pozzoni, M. and Repossi, M. and Cusmai, M. and Decanis, U. and Mazzanti, A. and Svelto, F.}, title = {A Wideband Receiver for Multi-Gbit/s Communications in 65 nm CMOS}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2011}, volume = {46}, pages = {551-561}, number = {3}, month = {March}, doi = {10.1109/JSSC.2010.2100251}, issn = {0018-9200}, keywords = {CMOS analogue integrated circuits;MMIC amplifiers;MMIC oscillators;low-power electronics;microwave filters;phase detectors;radio links;radio transceivers;voltage-controlled oscillators;wideband amplifiers;analog fractional bandwidths;charge pump combination;classical LC loaded stages bandwidth;filter components integrated phase noise;frequency reference generator;high-rate communications technology;in-band gain ripple;integer-N type-II synthesizer;interstage coupling;linear processing chain;low power wide range divider chain;noise figure 6.5 dB;power 84 mW;signal constellation integrity;size 65 nm;sliding IF architecture;state phase frequency detector;switched tuned LC VCO;transceiver;wideband amplifiers;wideband receiver;wireless links;Bandwidth;Capacitors;Couplings;Gain;Mixers;Noise;Synthesizers;CMOS;coupled resonators;dividers;integrated noise;low noise amplifiers;millimeter wave receiver;mixer;mm-wave;synthesizer;wideband}, timestamp = {2015.03.04} }`

### 2010

- F. Gianaroli, A. Barbieri, F. Pancaldi, A. Mazzanti, and G. M. Vitetta, “A Novel Approach to Power-Line Channel Modeling,” Power Delivery, IEEE Transactions on, vol. 25, iss. 1, pp. 132-140, 2010.

[Bibtex]`@ARTICLE{2010Gianaroli, author = {Gianaroli, F. and Barbieri, A. and Pancaldi, F. and Mazzanti, A. and Vitetta, G.M.}, title = {A Novel Approach to Power-Line Channel Modeling}, journal = {Power Delivery, IEEE Transactions on}, year = {2010}, volume = {25}, pages = {132-140}, number = {1}, month = {Jan}, doi = {10.1109/TPWRD.2009.2035283}, issn = {0885-8977}, keywords = {Monte Carlo methods;carrier transmission on power lines;indoor communication;telecommunication network topology;Monte Carlo method;bifilar model;frequency 1 MHz to 30 MHz;low voltage indoor power networks;network topology;power line channel modeling;statistical modeling;Multipath channel;power-line communications;statistical channel model}, timestamp = {2015.03.04} }`

- A. Mazzanti, E. Monaco, M. Pozzoni, and F. Svelto, “A 13.1% tuning range 115GHz frequency generator based on an injection-locked frequency doubler in 65nm CMOS,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International, 2010, pp. 422-423.

[Bibtex]`@INPROCEEDINGS{2010Mazzanti, author = {Mazzanti, A. and Monaco, E. and Pozzoni, M. and Svelto, F.}, title = {A 13.1% tuning range 115GHz frequency generator based on an injection-locked frequency doubler in 65nm CMOS}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International}, year = {2010}, pages = {422-423}, month = {Feb}, doi = {10.1109/ISSCC.2010.5433869}, issn = {0193-6530}, keywords = {CMOS analogue integrated circuits;field effect MIMIC;frequency multipliers;injection locked oscillators;low-power electronics;millimetre wave oscillators;phase noise;voltage-controlled oscillators;CMOS frequency multiplier;frequency 115 GHz;frequency generator;half-frequency VCO;injection-locked Pierce oscillator;injection-locked frequency doubler;phase noise;power 12 mW;power dissipation;size 65 nm;stand-alone push-push multipliers;CMOS technology;Capacitors;Circuits;Frequency;Injection-locked oscillators;Phase noise;Semiconductor device measurement;Tuning;Voltage;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- A. Mazzanti, M. B. Vahidfar, M. Sosio, and F. Svelto, “A Low Phase-Noise Multi-Phase LO Generator for Wideband Demodulators Based on Reconfigurable Sub-Harmonic Mixers,” Solid-State Circuits, IEEE Journal of, vol. 45, iss. 10, pp. 2104-2115, 2010.

[Bibtex]`@ARTICLE{2010Mazzantia, author = {Mazzanti, A. and Vahidfar, M.B. and Sosio, M. and Svelto, F.}, title = {A Low Phase-Noise Multi-Phase LO Generator for Wideband Demodulators Based on Reconfigurable Sub-Harmonic Mixers}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2010}, volume = {45}, pages = {2104-2115}, number = {10}, month = {Oct}, doi = {10.1109/JSSC.2010.2060258}, issn = {0018-9200}, keywords = {CMOS integrated circuits;cellular radio;demodulators;frequency synthesizers;mixers (circuits);network topology;oscillators;ultra wideband communication;wireless LAN;UWB technology;WiMedia UWB groups;circuit topologies;cognitive radios;frequency 10 MHz;frequency 3.1 GHz to 9.5 GHz;frequency synthesizer;harmonic operation modes;low phase-noise multiphase LO generator;multistage injection locked ring oscillator;reconfigurable subharmonic mixers;software defined radios;transceiver architectures;wideband CMOS receivers;wideband demodulators;Demodulation;Mixers;Phase locked loops;Phase noise;Ring oscillators;Tuning;Wideband;Fast hopping synthesizer;UWB;injection locking;multi phase local oscillator;phase noise;ring oscillator;sub-harmonic mixers;ultra wide band}, timestamp = {2015.03.04} }`

- E. Monaco, M. Pozzoni, F. Svelto, and A. Mazzanti, “Injection-Locked CMOS Frequency Doublers for \mu -Wave and mm-Wave Applications,” Solid-State Circuits, IEEE Journal of, vol. 45, iss. 8, pp. 1565-1574, 2010.

[Bibtex]`@ARTICLE{2010Monaco, author = {Monaco, E. and Pozzoni, M. and Svelto, F. and Mazzanti, A.}, title = {Injection-Locked CMOS Frequency Doublers for \mu -Wave and mm-Wave Applications}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2010}, volume = {45}, pages = {1565-1574}, number = {8}, month = {Aug}, doi = {10.1109/JSSC.2010.2049780}, issn = {0018-9200}, keywords = {CMOS integrated circuits;frequency multipliers;millimetre wave integrated circuits;millimetre wave oscillators;voltage-controlled oscillators;ÎĽ-wave applications;F-band multiplier;Ku-band multiplier;autonomous differential oscillator;bandwidth 106 GHz to 128 GHz;bandwidth 11 GHz to 15 GHz;double frequency tone locking;frequency tuning range;half-frequency standard LC-tank VCO;injection-locked CMOS frequency doublers;key passive components;mm-wave applications;on-chip frequency generators;power 5.2 mW;power 6 mW;signal spectral purity;size 0.13 mum;size 65 nm;variable capacitors;voltage 330 mV;voltage 470 mV;voltage-controlled oscillators running;Bandwidth;CMOS technology;Capacitors;Degradation;Displays;Frequency;Signal design;Tuning;Voltage;Voltage-controlled oscillators;Frequency doubler;frequency multiplier;injection locking;microwaves;millimeter waves;mmw;push-push}, timestamp = {2015.03.04} }`

- E. Monaco, M. Pozzoni, F. Svelto, and A. Mazzanti, “A 6mW, 115GHz CMOS injection-locked frequency doubler with differential output,” in IC Design and Technology (ICICDT), 2010 IEEE International Conference on, 2010, pp. 236-239.

[Bibtex]`@INPROCEEDINGS{2010Monacoa, author = {Monaco, E. and Pozzoni, M. and Svelto, F. and Mazzanti, A.}, title = {A 6mW, 115GHz CMOS injection-locked frequency doubler with differential output}, booktitle = {IC Design and Technology (ICICDT), 2010 IEEE International Conference on}, year = {2010}, pages = {236-239}, month = {June}, doi = {10.1109/ICICDT.2010.5510246}, keywords = {CMOS integrated circuits;MIMIC;frequency multipliers;oscillators;CMOS injection-locked frequency doubler;Pierce oscillator;active devices;closed form expression;differential output;frequency 115 GHz;frequency locking range;frequency multipliers;millimeter-wave CMOS frequency multiplier;power 6 mW;push-push pair;Bandwidth;CMOS technology;Frequency;Injection-locked oscillators;Millimeter wave circuits;Millimeter wave technology;Power dissipation;Power system harmonics;Prototypes;Semiconductor device modeling}, timestamp = {2015.03.04} }`

- M. Pozzoni, S. Erba, D. Sanzogni, M. Ganzerli, P. Viola, D. Baldi, M. Repossi, G. Spelgatti, and F. Svelto, “A 12Gb/s 39dB loss-recovery unclocked-DFE receiver with bi-dimensional equalization,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International, 2010, pp. 164-165.

[Bibtex]`@INPROCEEDINGS{2010Pozzoni, author = {Pozzoni, M. and Erba, S. and Sanzogni, D. and Ganzerli, M. and Viola, P. and Baldi, D. and Repossi, M. and Spelgatti, G. and Svelto, F.}, title = {A 12Gb/s 39dB loss-recovery unclocked-DFE receiver with bi-dimensional equalization}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International}, year = {2010}, pages = {164-165}, month = {Feb}, doi = {10.1109/ISSCC.2010.5434006}, issn = {0193-6530}, keywords = {decision feedback equalisers;feedback;receivers;CMOS receiver;bi-dimensional equalization;decision feedback equalization;feedback delay;loss-recovery unclocked-DFE receiver;Backplanes;Clocks;Decision feedback equalizers;Delay;Event detection;Filters;Jitter;Logic;Principal component analysis;Timing}, timestamp = {2015.03.04} }`

- E. Temporiti, C. Weltin-Wu, D. Baldi, M. Cusmai, and F. Svelto, “A 3.5 GHz Wideband ADPLL With Fractional Spur Suppression Through TDC Dithering and Feedforward Compensation,” Solid-State Circuits, IEEE Journal of, vol. 45, iss. 12, pp. 2723-2736, 2010.

[Bibtex]`@ARTICLE{2010Temporiti, author = {Temporiti, E. and Weltin-Wu, C. and Baldi, D. and Cusmai, M. and Svelto, F.}, title = {A 3.5 GHz Wideband ADPLL With Fractional Spur Suppression Through TDC Dithering and Feedforward Compensation}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2010}, volume = {45}, pages = {2723-2736}, number = {12}, month = {Dec}, doi = {10.1109/JSSC.2010.2077370}, issn = {0018-9200}, keywords = {CMOS digital integrated circuits;analogue-digital conversion;calibration;compensation;digital phase locked loops;feedforward;field effect MMIC;interference suppression;phase noise;TDC dithering;all-digital phase-locked-loop;calibration;digital CMOS prototype;dither-induced phase noise suppression;divider-less fractional-N ADPLL;feedforward compensation;feedforward dither cancellation technique;fractional spur suppression;fractional tone;frequency 3.5 GHz;size 65 nm;time-to-digital converter;wideband ADPLL;Calibration;Delay;Frequency synthesizers;Phase locked loops;Phase noise;Table lookup;ADPLL;Fractional- $N$;dither;frequency synthesizer;phase-locked-loop (PLL);spurious tones;time-to-digital converter (TDC)}, timestamp = {2015.03.04} }`

- F. Vecchi, S. Bozzola, M. Pozzoni, D. Guermandi, E. Temporiti, M. Repossi, U. Decanis, A. Mazzanti, and F. Svelto, “A 60GHz receiver with 13GHz bandwidth for Gbit/s wireless links in 65nm CMOS,” in IC Design and Technology (ICICDT), 2010 IEEE International Conference on, 2010, pp. 228-231.

[Bibtex]`@INPROCEEDINGS{2010Vecchi, author = {Vecchi, F. and Bozzola, S. and Pozzoni, M. and Guermandi, D. and Temporiti, E. and Repossi, M. and Decanis, U. and Mazzanti, A. and Svelto, F.}, title = {A 60GHz receiver with 13GHz bandwidth for Gbit/s wireless links in 65nm CMOS}, booktitle = {IC Design and Technology (ICICDT), 2010 IEEE International Conference on}, year = {2010}, pages = {228-231}, month = {June}, doi = {10.1109/ICICDT.2010.5510248}, keywords = {CMOS integrated circuits;low noise amplifiers;millimetre waves;mixers (circuits);phase noise;voltage-controlled oscillators;CMOS;LNA gain;RF mixer;VCO;bandwidth 13 GHz;frequency 10 MHz;frequency 60 GHz;gain 35 dB;local oscillator;low-noise amplifier;mm-waves;phase noise;power 75 mW;quadrature IF mixer;size 65 nm;sliding IF architecture;wireless link;Bandwidth;Frequency conversion;Gain;Local oscillators;Phase noise;Power dissipation;RF signals;Radio frequency;Voltage-controlled oscillators;Wideband}, timestamp = {2015.03.04} }`

- F. Vecchi, S. Bozzola, M. Pozzoni, D. Guermandi, E. Temporiti, M. Repossi, U. Decanis, A. Mazzanti, and F. Svelto, “A wideband mm-Wave CMOS receiver for Gb/s communications employing interstage coupled resonators,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International, 2010, pp. 220-221.

[Bibtex]`@INPROCEEDINGS{2010Vecchia, author = {Vecchi, F. and Bozzola, S. and Pozzoni, M. and Guermandi, D. and Temporiti, E. and Repossi, M. and Decanis, U. and Mazzanti, A. and Svelto, F.}, title = {A wideband mm-Wave CMOS receiver for Gb/s communications employing interstage coupled resonators}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International}, year = {2010}, pages = {220-221}, month = {Feb}, doi = {10.1109/ISSCC.2010.5433953}, issn = {0193-6530}, keywords = {low noise amplifiers;millimetre wave receivers;mixers (circuits);transceivers;voltage-controlled oscillators;LNA gain stages;RF mixer;VCO;dividers;interstage coupled resonators;power 75 mW;quadrature IF mixers;size 65 nm;wideband mm-wave CMOS receiver;Bandwidth;Capacitors;Inductors;Noise measurement;Phase noise;Radio frequency;Transconductors;Tuning;Voltage-controlled oscillators;Wideband}, timestamp = {2015.03.04} }`

- C. Weltin-Wu, E. Temporiti, D. Baldi, M. Cusmai, and F. Svelto, “A 3.5GHz wideband ADPLL with fractional spur suppression through TDC dithering and feedforward compensation,” in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International, 2010, pp. 468-469.

[Bibtex]`@INPROCEEDINGS{2010Weltin-Wu, author = {Weltin-Wu, C. and Temporiti, E. and Baldi, D. and Cusmai, M. and Svelto, F.}, title = {A 3.5GHz wideband ADPLL with fractional spur suppression through TDC dithering and feedforward compensation}, booktitle = {Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International}, year = {2010}, pages = {468-469}, month = {Feb}, doi = {10.1109/ISSCC.2010.5433846}, issn = {0193-6530}, keywords = {CMOS integrated circuits;calibration;compensation;field effect MMIC;microwave circuits;phase locked loops;CMOS integrated circuit;TDC dithering;all digital phase locked loop;bandwidth 3.4 MHz;feedforward compensation;fractional spur suppression;fractional-N ADPLL;frequency 3.5 GHz;fully integrated calibration logic;in-band phase noise;power 8.7 mW;size 65 nm;wideband ADPLL;1f noise;Calibration;Counting circuits;Delay;Frequency;Noise cancellation;Phase noise;Semiconductor device measurement;Table lookup;Wideband}, timestamp = {2015.03.04} }`

- C. Weltin-Wu, E. Temporiti, M. Cusmai, D. Baldi, and F. Svelto, “Insights Into Wideband Fractional ADPLLs: Modeling and Calibration of Nonlinearity Induced Fractional Spurs,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 57, iss. 9, pp. 2259-2268, 2010.

[Bibtex]`@ARTICLE{2010Weltin-Wua, author = {Weltin-Wu, C. and Temporiti, E. and Cusmai, M. and Baldi, D. and Svelto, F.}, title = {Insights Into Wideband Fractional ADPLLs: Modeling and Calibration of Nonlinearity Induced Fractional Spurs}, journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on}, year = {2010}, volume = {57}, pages = {2259-2268}, number = {9}, month = {Sept}, doi = {10.1109/TCSI.2010.2071650}, issn = {1549-8328}, keywords = {CMOS digital integrated circuits;calibration;digital phase locked loops;frequency synthesizers;phase noise;GSM;analog functions;analog signal;digital CMOS;digital calibration;fractional spur amplitude;fractional spur frequency;fractional-N all-digital phase-locked loops;frequency 3 GHz;phase noise;prototype synthesizer;size 65 nm;voltage 1.2 V;voltage encoding;wideband fractional ADPLL;Bandwidth;Computational modeling;Delay;Phase locked loops;Phase noise;Radiation detectors;Synthesizers;All-digital phase-locked loop (ADPLL);TDC;digital calibration;fractional-N;frequency synthesizer;phase-locked loop (PLL);spurious tones}, timestamp = {2015.03.04} }`

### 2009

- M. Borgarino, A. Polemi, and A. Mazzanti, “Low-Cost Integrated Microwave Radiometer Front-End for Industrial Applications,” Microwave Theory and Techniques, IEEE Transactions on, vol. 57, iss. 12, pp. 3011-3018, 2009.

[Bibtex]`@ARTICLE{2009Borgarino, author = {Borgarino, M. and Polemi, Alessia and Mazzanti, A.}, title = {Low-Cost Integrated Microwave Radiometer Front-End for Industrial Applications}, journal = {Microwave Theory and Techniques, IEEE Transactions on}, year = {2009}, volume = {57}, pages = {3011-3018}, number = {12}, month = {Dec}, doi = {10.1109/TMTT.2009.2034209}, issn = {0018-9480}, keywords = {BiCMOS integrated circuits;Ge-Si alloys;microstrip antennas;microwave integrated circuits;radiometers;radiometry;BiCMOS technology;X-band;analog continuous-wave characterizations;antenna;benchmark experiment;electronic receiver;industrial applications;low-cost integrated microwave radiometer front-end;microstrip technology;radiometer test;size 0.35 mum;Fire detection;RF integrated circuit (RFIC);SiGe;microwave radiometer;printed array}, timestamp = {2015.03.04} }`

- S. Bozzola, D. Guermandi, F. Vecchi, M. Repossi, M. Pozzoni, A. Mazzanti, and F. Svelto, “A sliding IF receiver for mm-wave WLANs in 65nm CMOS,” in Custom Integrated Circuits Conference, 2009. CICC ’09. IEEE, 2009, pp. 669-672.

[Bibtex]`@INPROCEEDINGS{2009Bozzola, author = {Bozzola, S. and Guermandi, D. and Vecchi, F. and Repossi, M. and Pozzoni, M. and Mazzanti, A. and Svelto, F.}, title = {A sliding IF receiver for mm-wave WLANs in 65nm CMOS}, booktitle = {Custom Integrated Circuits Conference, 2009. CICC '09. IEEE}, year = {2009}, pages = {669-672}, month = {Sept}, doi = {10.1109/CICC.2009.5280754}, keywords = {CMOS integrated circuits;receivers;CMOS;phase noise;power consumption;quadrature IF mixers;sliding IF receiver;Energy consumption;Gain measurement;Local oscillators;Noise measurement;Performance evaluation;Phase noise;Prototypes;Radio frequency;Tuning;Voltage-controlled oscillators;60 GHz receivers;mm-wave CMOS;sliding-IF architecture}, timestamp = {2015.03.04} }`

- A. Mazzanti and P. Andreani, “A Time-Variant Analysis of Fundamental 1/f^3 Phase Noise in CMOS Parallel LC -Tank Quadrature Oscillators,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 56, iss. 10, pp. 2173-2180, 2009.

[Bibtex]`@ARTICLE{2009Mazzanti, author = {Mazzanti, A. and Andreani, P.}, title = {A Time-Variant Analysis of Fundamental 1/f^3 Phase Noise in CMOS Parallel LC -Tank Quadrature Oscillators}, journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on}, year = {2009}, volume = {56}, pages = {2173-2180}, number = {10}, month = {Oct}, doi = {10.1109/TCSI.2009.2015214}, issn = {1549-8328}, keywords = {1/f noise;CMOS integrated circuits;MOSFET;harmonic oscillators (circuits);phase noise;radiofrequency oscillators;semiconductor device noise;1/f MOS device noise upconversion;CMOS parallel LC-tank quadrature oscillator;SpectreRF simulations;fundamental 1/f3 phase noise spectrum;low-frequency noise source;parallel-coupled quadrature CMOS harmonic oscillator;time-variant analysis;CMOS RFICs;flicker noise;impulse sensitivity function (ISF);phase noise;quadrature oscillator}, timestamp = {2015.03.04} }`

- A. Mazzanti, M. B. Vahidfar, M. Sosio, and F. Svelto, “A reconfigurable demodulator with 3-to-5GHz agile synthesizer for 9-band WiMedia UWB in 65nm CMOS,” in Solid-State Circuits Conference – Digest of Technical Papers, 2009. ISSCC 2009. IEEE International, 2009, p. 412-413,413a.

[Bibtex]`@INPROCEEDINGS{2009Mazzantia, author = {Mazzanti, A. and Vahidfar, M.B. and Sosio, M. and Svelto, F.}, title = {A reconfigurable demodulator with 3-to-5GHz agile synthesizer for 9-band WiMedia UWB in 65nm CMOS}, booktitle = {Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International}, year = {2009}, pages = {412-413,413a}, month = {Feb}, doi = {10.1109/ISSCC.2009.4977483}, keywords = {CMOS integrated circuits;MMIC;demodulators;frequency synthesizers;ultra wideband technology;CMOS reconfigurable direct-conversion receiver;WiMedia UWB synthesizer;frequency 3 GHz to 5 GHz;frequency synthesizer;power 43 mW;reconfigurable demodulator;size 65 nm;Circuits;Demodulation;Noise measurement;Packaging;Physical layer;Power generation;Radio frequency;Synthesizers;Voltage;Wideband}, timestamp = {2015.03.04} }`

- E. Monaco, M. Borgarino, F. Svelto, and A. Mazzanti, “A 5.2mW ku-band CMOS injection-locked frequency doubler with differential input / output,” in Custom Integrated Circuits Conference, 2009. CICC ’09. IEEE, 2009, pp. 61-64.

[Bibtex]`@INPROCEEDINGS{2009Monaco, author = {Monaco, E. and Borgarino, M. and Svelto, F. and Mazzanti, A.}, title = {A 5.2mW ku-band CMOS injection-locked frequency doubler with differential input / output}, booktitle = {Custom Integrated Circuits Conference, 2009. CICC '09. IEEE}, year = {2009}, pages = {61-64}, month = {Sept}, doi = {10.1109/CICC.2009.5280886}, keywords = {CMOS integrated circuits;MMIC frequency convertors;field effect MMIC;frequency multipliers;network topology;CMOS injection-locked frequency doubler;LC oscillator;MMIC frequency convertors;circuit topology;differential pair;frequency multipliers;locking range;power 5.2 mW;CMOS technology;Character generation;Circuit topology;Equations;Frequency;Oscillators;Power dissipation;Prototypes;Semiconductor device modeling;Signal generators}, timestamp = {2015.03.04} }`

- M. Pozzoni, S. Erba, P. Viola, M. Pisati, E. Depaoli, D. Sanzogni, R. Brama, D. Baldi, M. Repossi, and F. Svelto, “A Multi-Standard 1.5 to 10 Gb/s Latch-Based 3-Tap DFE Receiver With a SSC Tolerant CDR for Serial Backplane Communication,” Solid-State Circuits, IEEE Journal of, vol. 44, iss. 4, pp. 1306-1315, 2009.

[Bibtex]`@ARTICLE{2009Pozzoni, author = {Pozzoni, M. and Erba, S. and Viola, P. and Pisati, M. and Depaoli, E. and Sanzogni, D. and Brama, R. and Baldi, D. and Repossi, M. and Svelto, F.}, title = {A Multi-Standard 1.5 to 10 Gb/s Latch-Based 3-Tap DFE Receiver With a SSC Tolerant CDR for Serial Backplane Communication}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2009}, volume = {44}, pages = {1306-1315}, number = {4}, month = {April}, doi = {10.1109/JSSC.2009.2014203}, issn = {0018-9200}, keywords = {decision feedback equalisers;receivers;SATA-SAS-FC receiver;SSC tolerant CDR;channel loss impairments;frequency-difference tracking;multi-standard latch-based 3-tap DFE receiver;receiver architecture;serial backplane communication;serial-to-parallel latency;Adaptive equalizers;Backplanes;Clocks;Decision feedback equalizers;Delay;Feedback loop;Frequency;Robustness;Synthetic aperture sonar;Topology;Adaptive equalizers;clock and data recovery;current-mode logic;data communication;decision feedback equalizers}, timestamp = {2015.03.04} }`

- M. Sosio, A. Mazzanti, M. Repossi, and F. Svelto, “A low-power ka-band direct conversion receiver employing half-frequency local oscillator in 65nm CMOS,” in Microwave Conference, 2009. EuMC 2009. European, 2009, pp. 256-259.

[Bibtex]`@INPROCEEDINGS{2009Sosio, author = {Sosio, M. and Mazzanti, A. and Repossi, M. and Svelto, F.}, title = {A low-power ka-band direct conversion receiver employing half-frequency local oscillator in 65nm CMOS}, booktitle = {Microwave Conference, 2009. EuMC 2009. European}, year = {2009}, pages = {256-259}, month = {Sept}, keywords = {CMOS integrated circuits;millimetre wave mixers;millimetre wave receivers;oscillators;CMOS technology;Ka band direct conversion receiver;complementary metal-oxide-semiconductor;frequency tuning;gain 31.5 dB;half-frequency local oscillator;noise figure 6.7 dB;power 78 mW;power dissipation;power silicon receivers;quadrature subharmonic mixers;size 65 nm;CMOS integrated circuits;CMOS technology;Frequency conversion;Frequency synthesizers;Integrated circuit noise;Local oscillators;Millimeter wave technology;Mixers;Silicon;Tuning}, timestamp = {2015.03.04} }`

- E. Temporiti, C. Weltin-Wu, D. Baldi, R. Tonietto, and F. Svelto, “Insights into wideband fractional All-Digital PLLs for RF applications,” in Custom Integrated Circuits Conference, 2009. CICC ’09. IEEE, 2009, pp. 37-44.

[Bibtex]`@INPROCEEDINGS{2009Temporiti, author = {Temporiti, E. and Weltin-Wu, C. and Baldi, D. and Tonietto, R. and Svelto, F.}, title = {Insights into wideband fractional All-Digital PLLs for RF applications}, booktitle = {Custom Integrated Circuits Conference, 2009. CICC '09. IEEE}, year = {2009}, pages = {37-44}, month = {Sept}, doi = {10.1109/CICC.2009.5280921}, keywords = {CMOS digital integrated circuits;phase locked loops;radiofrequency integrated circuits;RF applications;analog PLL evolution;digital CMOS;digital calibration;dividerless all digital PLL;large scale integration;size 0.65 nm;spur reduction technique;technology scaling;wideband fractional all digital PLL;Calibration;Frequency synthesizers;Large scale integration;Phase locked loops;Predictive models;Radio frequency;Semiconductor device modeling;Wideband}, timestamp = {2015.03.04} }`

- E. Temporiti, C. Weltin-Wu, D. Baldi, R. Tonietto, and F. Svelto, “A 3 GHz Fractional All-Digital PLL With a 1.8 MHz Bandwidth Implementing Spur Reduction Techniques,” Solid-State Circuits, IEEE Journal of, vol. 44, iss. 3, pp. 824-834, 2009.

[Bibtex]`@ARTICLE{2009Temporitia, author = {Temporiti, E. and Weltin-Wu, C. and Baldi, D. and Tonietto, R. and Svelto, F.}, title = {A 3 GHz Fractional All-Digital PLL With a 1.8 MHz Bandwidth Implementing Spur Reduction Techniques}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2009}, volume = {44}, pages = {824-834}, number = {3}, month = {March}, doi = {10.1109/JSSC.2008.2012363}, issn = {0018-9200}, keywords = {CMOS digital integrated circuits;digital integrated circuits;digital phase locked loops;CMOS IC;RF frequency synthesis;bandwidth 300 kHz to 1.8 MHz;fractional all-digital PLL;frequency 25 MHz;frequency 3 GHz;in-band output spurs;power 10 mW;size 65 nm;spur reduction techniques implementation;time-to-digital converter;voltage 1.2 V;Bandwidth;CMOS process;CMOS technology;Frequency synthesizers;Linearity;Low voltage;Phase locked loops;Quantization;Radio frequency;Wideband;ADPLL;Vernier TDC;all-digital phase locked loop;digital calibration;fractional frequency synthesizer;mismatch correction;spur reduction;time-to-digital converter (TDC)}, timestamp = {2015.03.04} }`

- F. Vecchi, M. Repossi, W. Eyssa, P. Arcioni, and F. Svelto, “Design of Low-Loss Transmission Lines in Scaled CMOS by Accurate Electromagnetic Simulations,” Solid-State Circuits, IEEE Journal of, vol. 44, iss. 9, pp. 2605-2615, 2009.

[Bibtex]`@ARTICLE{2009Vecchi, author = {Vecchi, F. and Repossi, M. and Eyssa, W. and Arcioni, P. and Svelto, F.}, title = {Design of Low-Loss Transmission Lines in Scaled CMOS by Accurate Electromagnetic Simulations}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2009}, volume = {44}, pages = {2605-2615}, number = {9}, month = {Sept}, doi = {10.1109/JSSC.2009.2023277}, issn = {0018-9200}, keywords = {CMOS integrated circuits;coplanar waveguides;field effect MIMIC;impedance matching;Floquet theorem;IC planarization;coplanar waveguides;electromagnetic parameter;fast simulation method;impedance matching;leveraging lines periodicity;low-loss transmission line design;millimeter-wave CMOS RF circuits;on-chip function;physical structure;shielded CPW lines;size 65 nm;CMOS integrated circuits;CMOS technology;Electromagnetic analysis;Electromagnetic shielding;Filtering;Impedance matching;Matched filters;Planarization;Transmission line theory;Transmission lines;CMOS;EM simulators;millimeter-wave integrated circuits;transmission lines;wireless transceivers}, timestamp = {2015.03.04} }`

- F. Vecchi, M. Repossi, W. Eyssa, P. Arcioni, and F. Svelto, “Analysis of loss mechanisms in coplanar waveguides integrated on bulk CMOS substrates,” in Microwave Conference, 2009. EuMC 2009. European, 2009, pp. 189-192.

[Bibtex]`@INPROCEEDINGS{2009Vecchia, author = {Vecchi, F. and Repossi, M. and Eyssa, W. and Arcioni, P. and Svelto, F.}, title = {Analysis of loss mechanisms in coplanar waveguides integrated on bulk CMOS substrates}, booktitle = {Microwave Conference, 2009. EuMC 2009. European}, year = {2009}, pages = {189-192}, month = {Sept}, keywords = {CMOS integrated circuits;MIMIC;coplanar transmission lines;coplanar waveguides;integrated circuit design;transceivers;bulk CMOS substrate;coplanar waveguide transmission line;design optimization;integrated transmission line;loss mechanism;millimeter wave on-chip;transceiver RF block;CMOS process;Conductivity;Conductors;Coplanar waveguides;Dielectric substrates;Impedance;Inductors;Propagation losses;Radio frequency;Spirals}, timestamp = {2015.03.04} }`

### 2008

- S. Bozzola, D. Guermandi, A. Mazzanti, and F. Svelto, “An 11.5% frequency tuning, -184 dBc/Hz noise FOM 54 GHz VCO,” in Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, 2008, pp. 657-660.

[Bibtex]`@INPROCEEDINGS{2008Bozzola, author = {Bozzola, S. and Guermandi, D. and Mazzanti, A. and Svelto, F.}, title = {An 11.5% frequency tuning, -184 dBc/Hz noise FOM 54 GHz VCO}, booktitle = {Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE}, year = {2008}, pages = {657-660}, month = {June}, doi = {10.1109/RFIC.2008.4561523}, issn = {1529-2517}, keywords = {MOS capacitors;millimetre wave oscillators;varactors;voltage-controlled oscillators;FOM;VCO;analog tuning;digital tuning;efficiency 11.5 percent;frequency 54 GHz;inversion mode MOS;optimize capacitance tuning range;power 7.2 mW;size 65 nm;varactor;Capacitance;Frequency measurement;Inductors;Noise measurement;Noise robustness;Prototypes;Spirals;Tuning;Varactors;Voltage-controlled oscillators;I-MOS varactor;Voltage controlled oscillator;mm-wave}, timestamp = {2015.03.04} }`

- R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, “A 30.5 dBm 48% PAE CMOS Class-E PA With Integrated Balun for RF Applications,” Solid-State Circuits, IEEE Journal of, vol. 43, iss. 8, pp. 1755-1762, 2008.

[Bibtex]`@ARTICLE{2008Brama, author = {Brama, R. and Larcher, L. and Mazzanti, A. and Svelto, F.}, title = {A 30.5 dBm 48% PAE CMOS Class-E PA With Integrated Balun for RF Applications}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2008}, volume = {43}, pages = {1755-1762}, number = {8}, month = {Aug}, doi = {10.1109/JSSC.2008.925605}, issn = {0018-9200}, keywords = {CMOS integrated circuits;UHF integrated circuits;UHF power amplifiers;baluns;signal processing;CMOS class-E power amplifiers;UHF power amplifiers;differential cascode topology;frequency 1.6 GHz;frequency 1.7 GHz;integrated baluns;power efficiency;signal processing;size 0.13 mum;switching amplifiers;thermal dissipation;CMOS technology;Impedance matching;Narrowband;Power amplifiers;Power generation;Radio frequency;Radiofrequency amplifiers;Signal processing;Topology;Transmitters;Baluns;CMOS power amplifiers;class-E;radio-frequency (RF) circuits;switching amplifiers;wireless communications}, timestamp = {2015.03.04} }`

- F. Ducati, A. Mazzanti, M. Borgarino, and M. Pifferi, “SiGe BiCMOS X-Band integrated radiometer,” in Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on, 2008, pp. 1257-1260.

[Bibtex]`@INPROCEEDINGS{2008Ducati, author = {Ducati, F. and Mazzanti, A. and Borgarino, M. and Pifferi, M.}, title = {SiGe BiCMOS X-Band integrated radiometer}, booktitle = {Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on}, year = {2008}, pages = {1257-1260}, month = {Aug}, doi = {10.1109/ICECS.2008.4675088}, keywords = {BiCMOS integrated circuits;Ge-Si alloys;MMIC;radiometers;semiconductor materials;BiCMOS x-band integrated radiometer;SiGe;frequency 8 GHz to 10 GHz;monolithic RF front-end;power 0.5 W;size 0.35 mum;BiCMOS integrated circuits;Costs;Fabrication;Germanium silicon alloys;Paper technology;Prototypes;Radio frequency;Radiometry;Silicon germanium;Testing}, timestamp = {2015.03.04} }`

- S. Erba, M. Pozzoni, M. Pisati, R. Brama, D. Sanzogni, E. Depaoli, P. Viola, and F. Svelto, “A 10Gb/s receiver with linear backplane equalization and mixer-based self-aligned CDR,” in Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE, 2008, pp. 559-562.

[Bibtex]`@INPROCEEDINGS{2008Erba, author = {Erba, S. and Pozzoni, M. and Pisati, M. and Brama, R. and Sanzogni, D. and Depaoli, E. and Viola, P. and Svelto, F.}, title = {A 10Gb/s receiver with linear backplane equalization and mixer-based self-aligned CDR}, booktitle = {Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE}, year = {2008}, pages = {559-562}, month = {Sept}, doi = {10.1109/CICC.2008.4672146}, keywords = {CMOS integrated circuits;clocks;equalisers;CMOS receiver;Nyquist loss;bit rate 10 Gbit/s;linear backplane equalization;mixer-based self-aligned CDR;size 65 nm;transmission channels;Backplanes;Clocks;Decision feedback equalizers;Delay;Integrated circuit interconnections;Interference;Optical signal processing;Phase locked loops;Propagation losses;Timing}, timestamp = {2015.03.04} }`

- L. Lu, Z. Tang, P. Andreani, A. Mazzanti, and A. Hajimiri, “Comments on "Comments on "A General Theory of Phase Noise in Electrical Oscillators " ",” Solid-State Circuits, IEEE Journal of, vol. 43, iss. 9, pp. 2170-2170, 2008.

[Bibtex]`@ARTICLE{2008Lu, author = {Lei Lu and Zhangwen Tang and Andreani, P. and Mazzanti, A. and Hajimiri, A.}, title = {Comments on "Comments on "A General Theory of Phase Noise in Electrical Oscillators " "}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2008}, volume = {43}, pages = {2170-2170}, number = {9}, month = {Sept}, doi = {10.1109/JSSC.2008.2005028}, issn = {0018-9200}, keywords = {frequency-domain analysis;oscillators;phase noise;sensitivity analysis;frequency-domain analysis;general electrical oscillators;impulse sensitivity function;phase noise;Application specific integrated circuits;Equations;Fourier series;Frequency domain analysis;Noise generators;Oscillators;Phase noise;Power generation;Solid state circuits;White noise;Impulse sensitivity function (ISF);oscillators;phase noise}, timestamp = {2015.03.04} }`

- A. Mazzanti and P. Andreani, “Class-C Harmonic CMOS VCOs, With a General Result on Phase Noise,” Solid-State Circuits, IEEE Journal of, vol. 43, iss. 12, pp. 2716-2729, 2008.

[Bibtex]`@ARTICLE{2008Mazzanti, author = {Mazzanti, A. and Andreani, P.}, title = {Class-C Harmonic CMOS VCOs, With a General Result on Phase Noise}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2008}, volume = {43}, pages = {2716-2729}, number = {12}, month = {Dec}, doi = {10.1109/JSSC.2008.2004867}, issn = {0018-9200}, keywords = {CMOS integrated circuits;network analysis;phase noise;voltage-controlled oscillators;class-C harmonic CMOS VCO;current consumption;differential-pair LC-tank oscillator;harmonic oscillator topology;oscillation amplitude;parasitic nodes;phase noise;phase-noise equations;rigorous time-variant circuit analysis;stray capacitances;tail bias current noise;time-variant study;Circuit analysis;Circuit noise;Circuit stability;Equations;Oscillators;Parasitic capacitance;Phase noise;Stability analysis;Tail;Topology;Amplitude stability;class-C;impulse sensitivity function;phase noise;radio frequency integrated circuits;squegging;voltage controlled oscillators}, timestamp = {2015.03.04} }`

- A. Mazzanti and P. Andreani, “A 1.4mW 4.90-to-5.65GHz Class-C CMOS VCO with an Average FoM of 194.5dBc/Hz,” in Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International, 2008, pp. 474-629.

[Bibtex]`@INPROCEEDINGS{2008Mazzantia, author = {Mazzanti, A. and Andreani, P.}, title = {A 1.4mW 4.90-to-5.65GHz Class-C CMOS VCO with an Average FoM of 194.5dBc/Hz}, booktitle = {Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International}, year = {2008}, pages = {474-629}, month = {Feb}, doi = {10.1109/ISSCC.2008.4523263}, keywords = {CMOS integrated circuits;microwave oscillators;network topology;phase noise;voltage-controlled oscillators;FoM;LC-tank oscillator;class-C CMOS VCO;differential CMOS Colpitts oscillator;frequency 4.90 GHz to 5.65 GHz;phase-noise properties;power 1.4 mW;singled-ended topology;Frequency;MOS devices;MOSFETs;Noise level;Phase noise;Solid state circuits;Switches;Tail;Tuning;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- A. Mazzanti, E. Sacchi, P. Andreani, and F. Svelto, “Analysis and Design of a Double-Quadrature CMOS VCO for Subharmonic Mixing at Ka-Band,” Microwave Theory and Techniques, IEEE Transactions on, vol. 56, iss. 2, pp. 355-363, 2008.

[Bibtex]`@ARTICLE{2008Mazzantib, author = {Mazzanti, A. and Sacchi, E. and Andreani, P. and Svelto, F.}, title = {Analysis and Design of a Double-Quadrature CMOS VCO for Subharmonic Mixing at Ka-Band}, journal = {Microwave Theory and Techniques, IEEE Transactions on}, year = {2008}, volume = {56}, pages = {355-363}, number = {2}, month = {Feb}, doi = {10.1109/TMTT.2007.914365}, issn = {0018-9480}, keywords = {CMOS integrated circuits;circuit tuning;microwave mixers;microwave oscillators;phase noise;varactors;voltage-controlled oscillators;Ka-band signal processing;current 18 mA;double-quadrature CMOS VCO;four-phase oscillator display;frequency 12 GHz to 15.9 GHz;phase noise;size 65 nm;subharmonic mixing;time-variant analysis;tuning varactor;voltage 0.8 V;voltage controlled oscillator;CMOS process;Circuit optimization;Displays;Frequency;Noise measurement;Phase noise;Q factor;Signal analysis;Signal processing;Voltage-controlled oscillators;CMOS;direct conversion;local oscillator (LO) generation;millimeter waves;multiphase;phase noise;subharmonic receivers;voltage-controlled oscillator (VCO)}, timestamp = {2015.03.04} }`

- A. Mazzanti, M. Sosio, M. Repossi, and F. Svelto, “A 24GHz Sub-Harmonic Receiver Front-End with Integrated Multi-Phase LO Generation in 65nm CMOS,” in Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International, 2008, pp. 216-608.

[Bibtex]`@INPROCEEDINGS{2008Mazzantic, author = {Mazzanti, A. and Sosio, M. and Repossi, M. and Svelto, F.}, title = {A 24GHz Sub-Harmonic Receiver Front-End with Integrated Multi-Phase LO Generation in 65nm CMOS}, booktitle = {Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International}, year = {2008}, pages = {216-608}, month = {Feb}, doi = {10.1109/ISSCC.2008.4523134}, keywords = {CMOS integrated circuits;low-power electronics;microwave generation;microwave receivers;radio receivers;voltage-controlled oscillators;VCO;direct-conversion I/Q-receiver front-end;frequency 24 GHz;integrated multiphase LO generation;low-power solution;size 65 nm;subharmonic receiver;ultrascaled RF CMOS process;Baseband;Capacitors;Frequency conversion;Frequency synthesizers;Mixers;Phase noise;Radio frequency;Radiofrequency amplifiers;Transconductors;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- M. Pozzoni, S. Erba, P. Viola, M. Pisati, E. Depaoli, D. Sanzogni, R. Brama, D. Baldi, M. Repossi, and F. Svelto, “A multi standard 1.5 to 10Gb/s latch-based 3-tap DFE receiver with a SSC tolerant CDR for serial backplane communication,” in VLSI Circuits, 2008 IEEE Symposium on, 2008, pp. 172-173.

[Bibtex]`@INPROCEEDINGS{2008Pozzoni, author = {Pozzoni, M. and Erba, S. and Viola, P. and Pisati, M. and Depaoli, E. and Sanzogni, D. and Brama, R. and Baldi, D. and Repossi, M. and Svelto, F.}, title = {A multi standard 1.5 to 10Gb/s latch-based 3-tap DFE receiver with a SSC tolerant CDR for serial backplane communication}, booktitle = {VLSI Circuits, 2008 IEEE Symposium on}, year = {2008}, pages = {172-173}, month = {June}, doi = {10.1109/VLSIC.2008.4585995}, keywords = {CMOS integrated circuits;decision feedback equalisers;radio receivers;spread spectrum communication;synchronisation;CMOS process;DFE data recovery;DFE receiver;SATA/SAS/FC receiver;SSC tolerant CDR;SSC tracking;bit rate 1.5 Gbit/s to 10 Gbit/s;current 140 mA;eye analysis;self-calibration;serial backplane communication;size 65 nm;spread spectrum clock tracking;voltage 1 V;Backplanes;Clocks;Communication standards;Decision feedback equalizers;Delay;Electronics packaging;Feeds;Frequency;Synthetic aperture sonar;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- F. Svelto, M. B. Vahidfar, and M. Brandolini, “Reconfigurable Si RF receiver front-ends for multistandard radios,” in Wireless Technology, 2008. EuWiT 2008. European Conference on, 2008, pp. 33-36.

[Bibtex]`@INPROCEEDINGS{2008Svelto, author = {Svelto, F. and Vahidfar, M.B. and Brandolini, M.}, title = {Reconfigurable Si RF receiver front-ends for multistandard radios}, booktitle = {Wireless Technology, 2008. EuWiT 2008. European Conference on}, year = {2008}, pages = {33-36}, month = {Oct}, keywords = {low noise amplifiers;mixers (circuits);software radio;transceivers;circuit architecture;circuit topology;mixer design;multistandard radios;multistandard transceiver;power consumption;reconfigurable low-noise amplifier design;reconfigurable silicon RF radio receiver front ends;Bluetooth;Communication standards;GSM;Global Positioning System;Radio frequency;Receivers;Roaming;Silicon;Wideband;Wireless LAN}, timestamp = {2015.03.04} }`

- M. B. Vahidfar, O. Shoaei, and F. Svelto, “A high dynamic range multi-standard CMOS mixer for GSM, UMTS and IEEE802.11b-g-a applications,” in Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, 2008, pp. 193-196.

[Bibtex]`@INPROCEEDINGS{2008Vahidfar, author = {Vahidfar, M.B. and Shoaei, O. and Svelto, F.}, title = {A high dynamic range multi-standard CMOS mixer for GSM, UMTS and IEEE802.11b-g-a applications}, booktitle = {Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE}, year = {2008}, pages = {193-196}, month = {June}, doi = {10.1109/RFIC.2008.4561416}, issn = {1529-2517}, keywords = {3G mobile communication;CMOS integrated circuits;MMIC mixers;UHF integrated circuits;UHF mixers;cellular radio;software radio;wireless LAN;GSM;Gilbert cell;IEEE 802.11b;IEEE 802.11g;IEEE802.11b;IIP2;UMTS;down-conversion mixer;frequency 900 MHz to 6 GHz;multistandard CMOS mixer;parasitic capacitor;software defined radios;spiral inductor;transformer based programmable inductor;3G mobile communication;Application software;CMOS technology;Cellular phones;Computer industry;Dynamic range;GSM;Inductors;Software radio;Spirals;CMOS;Software defined radio;dynamic range;highly integrated devices;mixer;multi standard;reconfigurable passive components}, timestamp = {2015.03.04} }`

- F. Vecchi, M. Repossi, A. Mazzanti, P. Arcioni, and F. Svelto, “A simple and complete circuit model for the coupling between symmetrical spiral inductors in silicon RF-ICs,” in Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE, 2008, pp. 479-482.

[Bibtex]`@INPROCEEDINGS{2008Vecchi, author = {Vecchi, F. and Repossi, M. and Mazzanti, A. and Arcioni, P. and Svelto, F.}, title = {A simple and complete circuit model for the coupling between symmetrical spiral inductors in silicon RF-ICs}, booktitle = {Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE}, year = {2008}, pages = {479-482}, month = {June}, doi = {10.1109/RFIC.2008.4561481}, issn = {1529-2517}, keywords = {CMOS integrated circuits;electromagnetic coupling;inductors;integrated circuit modelling;radiofrequency integrated circuits;CMOS technology;EM interference;Si;coupling wideband modeling;cross-coupling effects;inductor self-resonance;mutual inductance;silicon RF-IC;symmetrical spiral inductors;CMOS technology;Circuit testing;Coupling circuits;Equivalent circuits;Inductors;Interference;Radiofrequency integrated circuits;Semiconductor device modeling;Silicon;Spirals;Coupling;cross talk;ground shield;inductor;mutual inductance;substrate coupling}, timestamp = {2015.03.04} }`

- C. Weltin-Wu, E. Temporiti, D. Baldi, and F. Svelto, “A 3GHz Fractional-N All-Digital PLL with Precise Time-to-Digital Converter Calibration and Mismatch Correction,” in Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International, 2008, pp. 344-618.

[Bibtex]`@INPROCEEDINGS{2008Weltin-Wu, author = {Weltin-Wu, C. and Temporiti, E. and Baldi, D. and Svelto, F.}, title = {A 3GHz Fractional-N All-Digital PLL with Precise Time-to-Digital Converter Calibration and Mismatch Correction}, booktitle = {Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International}, year = {2008}, pages = {344-618}, month = {Feb}, doi = {10.1109/ISSCC.2008.4523198}, keywords = {CMOS integrated circuits;calibration;convertors;digital phase locked loops;CMOS technology;all-digital phased locked loop;bandwidth 100 kHz to 2 MHz;fractional synthesizer;frequency 25 MHz;frequency 3 GHz;mismatch correction;power 9.5 mW;size 65 nm;spur suppression;time-to-digital converter calibration;Bandwidth;Calibration;Circuit synthesis;Circuit testing;Error correction;Filters;Frequency synthesizers;Phase locked loops;Phase modulation;Phase noise}, timestamp = {2015.03.04} }`

### 2007

- R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, “A 1.7-GHz 31dBm differential CMOS Class-E Power Amplifier with 58% PAE,” in Custom Integrated Circuits Conference, 2007. CICC ’07. IEEE, 2007, pp. 551-554.

[Bibtex]`@INPROCEEDINGS{2007Brama, author = {Brama, R. and Larcher, L. and Mazzanti, A. and Svelto, F.}, title = {A 1.7-GHz 31dBm differential CMOS Class-E Power Amplifier with 58% PAE}, booktitle = {Custom Integrated Circuits Conference, 2007. CICC '07. IEEE}, year = {2007}, pages = {551-554}, month = {Sept}, doi = {10.1109/CICC.2007.4405792}, keywords = {CMOS integrated circuits;UHF amplifiers;differential amplifiers;harmonics suppression;power amplifiers;2nd harmonic suppression;CMOS technology;cascode device;differential CMOS class-E power amplifier;frequency 1.7 GHz;potential on-chip interference;power-added efficiency;radio frequency;thick oxide devices;CMOS technology;Differential amplifiers;Harmonics suppression;Interference suppression;Power amplifiers;Power generation;Power system harmonics;Prototypes;Radio frequency;Radiofrequency amplifiers}, timestamp = {2015.03.04} }`

- M. Brandolini, M. Sosio, and F. Svelto, “A 750 mV Fully Integrated Direct Conversion Receiver Front-End for GSM in 90-nm CMOS,” Solid-State Circuits, IEEE Journal of, vol. 42, iss. 6, pp. 1310-1317, 2007.

[Bibtex]`@ARTICLE{2007Brandolini, author = {Brandolini, M. and Sosio, M. and Svelto, F.}, title = {A 750 mV Fully Integrated Direct Conversion Receiver Front-End for GSM in 90-nm CMOS}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2007}, volume = {42}, pages = {1310-1317}, number = {6}, month = {June}, doi = {10.1109/JSSC.2007.897131}, issn = {0018-9200}, keywords = {CMOS analogue integrated circuits;cellular radio;radio receivers;1/f noise;CMOS technology;GSM;cellular phone applications;downconversion mixers;feedback loop;integrated direct conversion receiver front-end;pseudo-differential transconductor;receiver front-end;second-order intermodulation distortion mechanisms;Application specific integrated circuits;Dynamic range;Feedback loop;GSM;Intermodulation distortion;Low voltage;Noise figure;Radio frequency;Radiofrequency integrated circuits;Signal design;CMOS analog integrated circuits;DC offset;GSM;IIP2;IIP3;RF receiver;direct conversion;low-noise amplifier (LNA);mismatch;mixer;second-order distortion;self mixing}, timestamp = {2015.03.04} }`

- G. Cusmai, M. Repossi, G. Albasini, A. Mazzanti, and F. Svelto, “A Magnetically Tuned Quadrature Oscillator,” Solid-State Circuits, IEEE Journal of, vol. 42, iss. 12, pp. 2870-2877, 2007.

[Bibtex]`@ARTICLE{2007Cusmai, author = {Cusmai, G. and Repossi, M. and Albasini, G. and Mazzanti, A. and Svelto, F.}, title = {A Magnetically Tuned Quadrature Oscillator}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2007}, volume = {42}, pages = {2870-2877}, number = {12}, month = {Dec}, doi = {10.1109/JSSC.2007.908727}, issn = {0018-9200}, keywords = {CMOS integrated circuits;magnetic fields;oscillators;transformer windings;tuning;varactors;MOS varactors;continuous frequency tuning;frequency 3.5 GHz;frequency 6.4 GHz;frequency 7.3 GHz;magnetic coupling;magnetic field;magnetically tuned quadrature oscillator;noise figure 170.5 dB;noise figure 176.5 dB;phase noise;power 24 mW;quadrature generator;size 65 nm;transformer windings;transformer-capacitor oscillator cells;transformer-capacitor tank;Capacitors;Feedback loop;Frequency;Joining processes;Magnetic fields;Oscillators;Phase noise;Topology;Tuning;Windings;CMOS radio-frequency integrated circuits (RFICs);frequency tuning;integrated transformers;local oscillators;quadrature voltage-controlled oscillators (VCOs)}, timestamp = {2015.03.04} }`

- G. Cusmai, M. Repossi, G. Albasini, and F. Svelto, “A 3.2-to-7.3GHz Quadrature Oscillator with Magnetic Tuning,” in Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International, 2007, pp. 92-589.

[Bibtex]`@INPROCEEDINGS{2007Cusmaia, author = {Cusmai, G. and Repossi, M. and Albasini, G. and Svelto, F.}, title = {A 3.2-to-7.3GHz Quadrature Oscillator with Magnetic Tuning}, booktitle = {Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International}, year = {2007}, pages = {92-589}, month = {Feb}, doi = {10.1109/ISSCC.2007.373603}, issn = {0193-6530}, keywords = {capacitors;circuit tuning;magnetic fields;microwave oscillators;phase noise;transformers;10 MHz;3.2 to 7.3 GHz;energy tank;frequency tuning;magnetic tuning;phase noise;quadrature oscillator;transformer magnetic field;transformer-capacitor network;Bonding;CMOS process;Frequency;Inductance;Phase noise;Q factor;Resonance;Spirals;Tuning;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- F. Svelto, “State of the art and perspectives in RF and mm-wave microelectronics,” in Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D., 2007, pp. 290-290.

[Bibtex]`@INPROCEEDINGS{2007Svelto, author = {Svelto, F.}, title = {State of the art and perspectives in RF and mm-wave microelectronics}, booktitle = {Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D.}, year = {2007}, pages = {290-290}, month = {July}, doi = {10.1109/RME.2007.4401870}, keywords = {Analog circuits;CMOS process;CMOS technology;Circuit noise;Microelectronics;Radio frequency;Rail to rail amplifiers;Signal processing;Transceivers;Voltage}, timestamp = {2015.03.04} }`

- F. Svelto, A. Mazzanti, M. Sosio, and M. Repossi, “A CMOS Sub-Harmonic Architecture for Signal Down-Conversion at Ka-Band,” in Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on, 2007, pp. 179-182.

[Bibtex]`@INPROCEEDINGS{2007Sveltoa, author = {Svelto, F. and Mazzanti, A. and Sosio, M. and Repossi, M.}, title = {A CMOS Sub-Harmonic Architecture for Signal Down-Conversion at Ka-Band}, booktitle = {Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on}, year = {2007}, pages = {179-182}, month = {Dec}, doi = {10.1109/RFIT.2007.4443945}, keywords = {CMOS integrated circuits;intermodulation distortion;microwave receivers;millimetre wave receivers;quadrature amplitude modulation;signal processing;CMOS sub-harmonic architecture;Ka-band;frequency translation;integrated circuit architecture;intermodulation distortion;lower frequency reference;mm-wave receiver;quadrature demodulator;quadrature sub-harmonic mixing;signal down conversion;signal processing;size 65 nm;tuning elements;Demodulation;Filters;Frequency conversion;Frequency synthesizers;Image converters;Mixers;Radio frequency;Signal processing;Tuning;Voltage-controlled oscillators;Silicon mmWaves Integrated Circuits;direct conversion;multi-phase Voltage Controlled Oscillators;sub-harmonic mixers}, timestamp = {2015.03.04} }`

- V. D. Torre, M. Conta, R. Chokkalingam, G. Cusmai, P. Rossi, and F. Svelto, “A 20 mW 3.24 mm^2 Fully Integrated GPS Radio for Location Based Services,” Solid-State Circuits, IEEE Journal of, vol. 42, iss. 3, pp. 602-612, 2007.

[Bibtex]`@ARTICLE{2007Torre, author = {Torre, V.D. and Conta, M. and Chokkalingam, R. and Cusmai, G. and Rossi, P. and Svelto, F.}, title = {A 20 mW 3.24 mm^2 Fully Integrated GPS Radio for Location Based Services}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2007}, volume = {42}, pages = {602-612}, number = {3}, month = {March}, doi = {10.1109/JSSC.2006.891723}, issn = {0018-9200}, keywords = {Ge-Si alloys;Global Positioning System;band-pass filters;low noise amplifiers;microwave mixers;microwave receivers;mobile handsets;phase locked loops;radio receivers;voltage-controlled oscillators;0.18 micron;1 dB;1.9 GHz;2 bit;20 mW;5 dB;GPS receiver;SiGe;automatic gain control;cellphone leakage;cellular phones;complex bandpass filter;fractional-N PLL;highly selective LNA;integrated GPS radio;location based services;quadrature VCO topology;quadrature passive mixer;quantizer;sigma-delta PLL;variable gain amplifier;Cellular phones;Energy consumption;Gain;Germanium silicon alloys;Global Positioning System;Noise figure;Receivers;Silicon germanium;Topology;Voltage-controlled oscillators;Assisted GPS;CMOS;GPS;GSM;cellular;direct conversion;wireless receiver}, timestamp = {2015.03.04} }`

### 2006

- F. Agnelli, G. Albasini, I. Bietti, A. Gnudi, A. Lacaita, D. Manstretta, R. Rovatti, E. Sacchi, P. Savazzi, F. Svelto, E. Temporiti, S. Vitali, and R. Castello, “Wireless multi-standard terminals: system analysis and design of a reconfigurable RF front-end,” Circuits and Systems Magazine, IEEE, vol. 6, iss. 1, pp. 38-59, 2006.

[Bibtex]`@ARTICLE{2006Agnelli, author = {Agnelli, F. and Albasini, G. and Bietti, I. and Gnudi, A. and Lacaita, Andrea and Manstretta, D. and Rovatti, R. and Sacchi, E. and Savazzi, P. and Svelto, F. and Temporiti, E. and Vitali, S. and Castello, R.}, title = {Wireless multi-standard terminals: system analysis and design of a reconfigurable RF front-end}, journal = {Circuits and Systems Magazine, IEEE}, year = {2006}, volume = {6}, pages = {38-59}, number = {1}, month = {First}, doi = {10.1109/MCAS.2006.1607637}, issn = {1531-636X}, keywords = {3G mobile communication;Bluetooth;cellular radio;circuit simulation;reconfigurable architectures;wireless LAN;0.13 micron;Bluetooth radio interfaces;DC offset;EDGE;GSM;IEEE802.11a/b/g;LAN;UMTS;base-band blocks;current driven passive mixers;error rates;frequency down-converter;input matching;input noise;integrated transformers;linear amplification with non-linear component architecture;low noise amplifier;mixer;multi-standard simulator;positive feedback;reconfigurable RF front-end;system analysis;system design;tunable VCO;wireless multi-standard terminals;3G mobile communication;Bluetooth;CMOS technology;Circuit simulation;GSM;Impedance matching;Radio frequency;Radio transmitters;System analysis and design;Wireless LAN}, timestamp = {2015.03.04} }`

- R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, “Impact of Scaling on CMOS Radio Frequency Class-E Power Amplifiers,” in Research in Microelectronics and Electronics 2006, Ph. D., 2006, pp. 489-492.

[Bibtex]`@INPROCEEDINGS{2006Brama, author = {Brama, R. and Larcher, L. and Mazzanti, A. and Svelto, F.}, title = {Impact of Scaling on CMOS Radio Frequency Class-E Power Amplifiers}, booktitle = {Research in Microelectronics and Electronics 2006, Ph. D.}, year = {2006}, pages = {489-492}, doi = {10.1109/RME.2006.1690000}, keywords = {CMOS integrated circuits;power amplifiers;radiofrequency integrated circuits;CMOS integrated circuits;class-E power amplifiers;power added efficiency;power loss;radiofrequency integrated circuits;Analytical models;CMOS analog integrated circuits;CMOS digital integrated circuits;CMOS technology;Circuit simulation;High power amplifiers;Power amplifiers;Power generation;Radio frequency;Radiofrequency amplifiers}, timestamp = {2015.03.04} }`

- M. Brandolini, P. Rossi, D. Sanzogni, and F. Svelto, “A +78 dBm IIP2 CMOS direct downconversion mixer for fully integrated UMTS receivers,” Solid-State Circuits, IEEE Journal of, vol. 41, iss. 3, pp. 552-559, 2006.

[Bibtex]`@ARTICLE{2006Brandolini, author = {Brandolini, M. and Rossi, P. and Sanzogni, D. and Svelto, F.}, title = {A +78 dBm IIP2 CMOS direct downconversion mixer for fully integrated UMTS receivers}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2006}, volume = {41}, pages = {552-559}, number = {3}, month = {March}, doi = {10.1109/JSSC.2005.864123}, issn = {0018-9200}, keywords = {3G mobile communication;CMOS analogue integrated circuits;RC circuits;frequency convertors;integrated circuit noise;low-power electronics;mixers (circuits);radio receivers;0.18 micron;1.8 V;16 dB;4 mA;4.5 MHz;CMOS analog integrated circuits;DC offset;IIP2 CMOS direct downconversion mixer;RF receiver;fully integrated UMTS receivers;hybrid direct conversion architecture;input transconductor;inter-stage surface acoustic wave filter;low noise amplifier;out-of-band interferers;parasitic capacitors;second-order inter-modulation mechanisms;switching pair;3G mobile communication;Acoustic noise;Acoustic waves;Costs;Dynamic range;Filters;Linearity;Low-noise amplifiers;Performance analysis;Surface acoustic waves;CMOS analog integrated circuits;DC offset;IIP2;IIP3;RF receiver;UMTS;WCDMA;direct conversion;mismatch;mixer;second-order distortion;self mixing}, timestamp = {2015.03.04} }`

- M. Brandolini, M. Sosio, and F. Svelto, “A 750mV 15kHz 1/f Noise Corner 51dBm IIP2 Direct-Conversion Front-End for GSM in 90nm CMOS,” in Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International, 2006, pp. 1882-1891.

[Bibtex]`@INPROCEEDINGS{2006Brandolinia, author = {Brandolini, M. and Sosio, M. and Svelto, F.}, title = {A 750mV 15kHz 1/f Noise Corner 51dBm IIP2 Direct-Conversion Front-End for GSM in 90nm CMOS}, booktitle = {Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International}, year = {2006}, pages = {1882-1891}, month = {Feb}, doi = {10.1109/ISSCC.2006.1696246}, issn = {0193-6530}, keywords = {1/f noise;CMOS integrated circuits;cellular radio;mixers (circuits);0.75 V;1/f noise;15 kHz;15 mA;3.5 dB;31.5 dB;90 nm;CMOS process;GSM;direct-conversion front-end;linear mixer;CMOS analog integrated circuits;CMOS process;CMOS technology;Feedback loop;GSM;Linearity;Radio frequency;Resistors;Transconductors;Voltage}, timestamp = {2015.03.04} }`

- G. Cusmai, M. Brandolini, P. Rossi, and F. Svelto, “A 0.18-um CMOS Selective Receiver Front-End for UWB Applications,” Solid-State Circuits, IEEE Journal of, vol. 41, iss. 8, pp. 1764-1771, 2006.

[Bibtex]`@ARTICLE{2006Cusmai, author = {Cusmai, G. and Brandolini, M. and Rossi, P. and Svelto, F.}, title = {A 0.18-um CMOS Selective Receiver Front-End for UWB Applications}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2006}, volume = {41}, pages = {1764-1771}, number = {8}, month = {Aug}, doi = {10.1109/JSSC.2006.877256}, issn = {0018-9200}, keywords = {CMOS integrated circuits;MMIC;OFDM modulation;feedback amplifiers;low noise amplifiers;low-pass filters;microwave receivers;mixers (circuits);ultra wideband communication;wireless LAN;0.18 micron;1 dB;1.8 V;10 mA;5 to 6 GHz;CMOS selective receiver front-end;CMOS technology;LNA;OFDM;PCB;UWB applications;WLAN interferer rejection;direct-conversion receiver front-end;low-noise amplifier;multi-band orthogonal frequency division multiplexing;noise figure;quadrature mixer;quadrature topology;second-order low-pass filtering;single-ended voltage-voltage feedback amplifier;single-notch network;ultra-wideband applications;CMOS integrated circuits;CMOS technology;Feedback;Low-noise amplifiers;Network topology;Noise measurement;OFDM;Ultra wideband technology;Voltage;Wireless LAN;Blocking;CMOS;RFIC;desensitization;front-end;low power;low-noise amplifier (LNA);mixer;multi-resonance;receiver;ultra-wideband (UWB);wireless LAN}, timestamp = {2015.03.04} }`

- V. Delia Torre, M. Conta, R. Chokkalingam, G. Cusmai, P. Rossi, and F. Svelto, “A 20mw 3.24mm2 fully integrated gps radio for cell-phones,” in Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International, 2006, pp. 1902-1911.

[Bibtex]`@INPROCEEDINGS{2006DeliaTorre, author = {Delia Torre, V. and Conta, M. and Chokkalingam, R. and Cusmai, G. and Rossi, P. and Svelto, F.}, title = {A 20mw 3.24mm2 fully integrated gps radio for cell-phones}, booktitle = {Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International}, year = {2006}, pages = {1902-1911}, month = {Feb}, doi = {10.1109/ISSCC.2006.1696248}, issn = {0193-6530}, keywords = {BiCMOS integrated circuits;Ge-Si alloys;Global Positioning System;analogue-digital conversion;frequency synthesizers;low noise amplifiers;mobile handsets;radio receivers;transceivers;0.18 micron;1 dB;1.8 V;1.9 GHz;20 mW;A/D converters;BiCMOS technology;GPS radio;GPS receiver;SiGe;cell phones;cellular transceivers;fractional-N synthesizer;global positioning system;low noise amplifiers;polyphase filters;reciprocal mixing;Cellular phones;Energy consumption;Filtering;Filters;Global Positioning System;Integrated circuit noise;Radio frequency;Radio transmitters;Receivers;Robustness}, timestamp = {2015.03.04} }`

- L. Larcher, D. Sanzogni, R. Brama, A. Mazzanti, and F. Svelto, “Oxide Breakdown After RF Stress: Experimental Analysis and Effects on Power Amplifier Operation,” in Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International, 2006, pp. 283-288.

[Bibtex]`@INPROCEEDINGS{2006Larcher, author = {Larcher, L. and Sanzogni, D. and Brama, R. and Mazzanti, A. and Svelto, F.}, title = {Oxide Breakdown After RF Stress: Experimental Analysis and Effects on Power Amplifier Operation}, booktitle = {Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International}, year = {2006}, pages = {283-288}, month = {March}, doi = {10.1109/RELPHY.2006.251229}, keywords = {CMOS integrated circuits;power amplifiers;radiofrequency integrated circuits;semiconductor device reliability;transceivers;CMOS radiofrequency transceivers;MOSFET;gate-oxide breakdown;power amplifiers;semiconductor device reliability;Degradation;Electric breakdown;MOSFETs;Operational amplifiers;Power amplifiers;Radio frequency;Radiofrequency amplifiers;Stress;Transceivers;Voltage;RF circuits reliability;oxide breakdown;oxide reliability}, timestamp = {2015.03.04} }`

- A. Liscidini, A. Mazzanti, R. Tonietto, L. Vandi, P. Andreani, and R. Castello, “Single-Stage Low-Power Quadrature RF Receiver Front-End: The LMV Cell,” Solid-State Circuits, IEEE Journal of, vol. 41, iss. 12, pp. 2832-2841, 2006.

[Bibtex]`@ARTICLE{2006Liscidini, author = {Liscidini, A. and Mazzanti, A. and Tonietto, R. and Vandi, L. and Andreani, P. and Castello, R.}, title = {Single-Stage Low-Power Quadrature RF Receiver Front-End: The LMV Cell}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2006}, volume = {41}, pages = {2832-2841}, number = {12}, month = {Dec}, doi = {10.1109/JSSC.2006.884824}, issn = {0018-9200}, keywords = {CMOS integrated circuits;Global Positioning System;low-power electronics;mixers (circuits);radio receivers;voltage-controlled oscillators;0.13 micron;1.2 V;36 dB;4.8 dB;5.4 mW;CMOS prototype;GPS receiver;LMV cell;classical LC tank oscillator;current reuse;low-noise amplifier;self-oscillating mixer;single-stage low-power quadrature RF receiver front-end;voltage-controlled oscillator;CMOS technology;Energy consumption;Gain;Global Positioning System;Low-noise amplifiers;Noise figure;Prototypes;Radio frequency;Voltage;Voltage-controlled oscillators;LC tank oscillator;Current reuse;GPS receiver;RF receiver;low power;low voltage;low-IF architecture;self-oscillating mixer (SOM)}, timestamp = {2015.03.04} }`

- A. Liscidini, A. Mazzanti, R. Tonietto, L. Vandi, P. Andreani, and R. Castello, “A 5.4mW GPS CMOS Quadrature Front-End Based on a Single-Stage LNA-Mixer-VCO,” in Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International, 2006, pp. 1892-1901.

[Bibtex]`@INPROCEEDINGS{2006Liscidinia, author = {Liscidini, A. and Mazzanti, A. and Tonietto, R. and Vandi, L. and Andreani, P. and Castello, R.}, title = {A 5.4mW GPS CMOS Quadrature Front-End Based on a Single-Stage LNA-Mixer-VCO}, booktitle = {Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International}, year = {2006}, pages = {1892-1901}, month = {Feb}, doi = {10.1109/ISSCC.2006.1696247}, issn = {0193-6530}, keywords = {CMOS integrated circuits;Global Positioning System;low noise amplifiers;mixers (circuits);radio receivers;radiofrequency integrated circuits;voltage-controlled oscillators;0.13 micron;1.2 V;36 dB;4.8 dB;5.4 mW;CMOS quadrature front-end;Global Positioning System;low noise amplifiers;self-oscillating mixers;voltage controlled oscillators;Baseband;Circuits;Global Positioning System;Impedance;Mixers;RF signals;Radio frequency;Switches;Voltage;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- A. Mazzanti, L. Larcher, R. Brama, and F. Svelto, “Analysis of reliability and power efficiency in cascode class-E PAs,” Solid-State Circuits, IEEE Journal of, vol. 41, iss. 5, pp. 1222-1229, 2006.

[Bibtex]`@ARTICLE{2006Mazzanti, author = {Mazzanti, A. and Larcher, L. and Brama, R. and Svelto, F.}, title = {Analysis of reliability and power efficiency in cascode class-E PAs}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2006}, volume = {41}, pages = {1222-1229}, number = {5}, month = {May}, doi = {10.1109/JSSC.2006.872734}, issn = {0018-9200}, keywords = {CMOS integrated circuits;UHF integrated circuits;UHF power amplifiers;integrated circuit reliability;0.13 micron;1.4 to 2.0 GHz;1.7 GHz;CMOS power amplifier;cascode class-E power amplifier;cascode-based topologies;device stacking;power efficiency;radiofrequency circuits;switching amplifier;wireless communications;Bandwidth;CMOS technology;Circuit topology;Design optimization;Frequency;Power amplifiers;Prototypes;Stacking;Stress;Voltage;CMOS power amplifier;Class-E;radio-frequency (RF) circuits;switching amplifier;wireless communications}, timestamp = {2015.03.04} }`

- A. Mazzanti and F. Svelto, “A 1.8-GHz injection-locked quadrature CMOS VCO with low phase noise and high phase accuracy,” Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 53, iss. 3, pp. 554-560, 2006.

[Bibtex]`@ARTICLE{2006Mazzantia, author = {Mazzanti, A. and Svelto, F.}, title = {A 1.8-GHz injection-locked quadrature CMOS VCO with low phase noise and high phase accuracy}, journal = {Circuits and Systems I: Regular Papers, IEEE Transactions on}, year = {2006}, volume = {53}, pages = {554-560}, number = {3}, month = {March}, doi = {10.1109/TCSI.2005.858161}, issn = {1549-8328}, keywords = {CMOS integrated circuits;UHF oscillators;injection locked oscillators;integrated circuit noise;mixers (circuits);phase noise;voltage-controlled oscillators;0.18 micron;1.8 GHz;1.8 V;10 mA;185 dB;3 MHz;600 kHz;CMOS technology;IBR measurements;image band rejection measurements;injection-locked oscillators;phase noise;quadrature CMOS VCO;upconversion mixer;voltage-controlled oscillators;CMOS technology;Capacitance;Frequency conversion;Injection-locked oscillators;Local oscillators;Phase noise;Power generation;Prototypes;Radiofrequency integrated circuits;Voltage-controlled oscillators;CMOS radio frequency integrated circuits;injection locking (IL);local oscillators;phase noise;quadrature generation;voltage-controlled oscillators (VCO)}, timestamp = {2015.03.04} }`

- A. Mazzanti, F. Svelto, and P. Andreani, “On the amplitude and phase errors of quadrature LC-tank CMOS oscillators,” Solid-State Circuits, IEEE Journal of, vol. 41, iss. 6, pp. 1305-1313, 2006.

[Bibtex]`@ARTICLE{2006Mazzantib, author = {Mazzanti, A. and Svelto, F. and Andreani, P.}, title = {On the amplitude and phase errors of quadrature LC-tank CMOS oscillators}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2006}, volume = {41}, pages = {1305-1313}, number = {6}, month = {June}, doi = {10.1109/JSSC.2006.874333}, issn = {0018-9200}, keywords = {CMOS integrated circuits;radiofrequency oscillators;voltage-controlled oscillators;CMOS oscillator;CMOS process;amplitude error;amplitude imbalance;component mismatch;frequency up-converter;parasitic inductor coupling;parasitic magnetic field;phase error;phase imbalance;quadrature LC oscillator;quadrature LC tank;small signal circuit;Amplitude estimation;Circuit topology;Coupling circuits;Differential equations;Displays;Inductors;Magnetic analysis;Magnetic fields;Oscillators;Phase estimation;CMOS radio frequency integrated circuits;image rejection;local oscillators;phase accuracy;quadrature voltage-controlled oscillators (QVCOs)}, timestamp = {2015.03.04} }`

- F. Svelto, “Fully integrated receiver front-ends for cell-phones in deep submicron CMOS,” in Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE, 2006, p. 4 pp.-.

[Bibtex]`@INPROCEEDINGS{2006Svelto, author = {Svelto, F.}, title = {Fully integrated receiver front-ends for cell-phones in deep submicron CMOS}, booktitle = {Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE}, year = {2006}, pages = {4 pp.-}, month = {June}, doi = {10.1109/RFIC.2006.1651146}, keywords = {CMOS integrated circuits;mixers (circuits);radio receivers;radiofrequency integrated circuits;CMOS active mixers;cell phones;deep submicron CMOS;fully integrated receiver front-ends;intermodulation distortion;3G mobile communication;Circuits;Dynamic range;GSM;Low voltage;Mixers;RF signals;Radio frequency;Resistors;Transconductors}, timestamp = {2015.03.04} }`

### 2005

- A. Bevilacqua and F. Svelto, “Statistical analysis of second-order intermodulation distortion in WCDMA direct conversion receivers,” Circuits and Systems II: Express Briefs, IEEE Transactions on, vol. 52, iss. 3, pp. 117-121, 2005.

[Bibtex]`@ARTICLE{2005Bevilacqua, author = {Bevilacqua, A. and Svelto, F.}, title = {Statistical analysis of second-order intermodulation distortion in WCDMA direct conversion receivers}, journal = {Circuits and Systems II: Express Briefs, IEEE Transactions on}, year = {2005}, volume = {52}, pages = {117-121}, number = {3}, month = {March}, doi = {10.1109/TCSII.2004.842044}, issn = {1549-7747}, keywords = {code division multiple access;intermodulation distortion;receivers;spectral analysis;statistical analysis;telecommunication standards;0.18 micron;CMOS DCR;WCDMA;accurate modeling;code division multi-access;code multiplexed channels;direct conversion receivers;homodyne detection;multichannel signal;nonlinear spectral analysis;second-order intermodulation distortion;single-channel signal;statistical analysis;stochastic processes;universal mobile telecommunications system standard;wideband code division multiple access systems;3G mobile communication;Intermodulation distortion;Multiaccess communication;Power system modeling;Quadrature phase shift keying;Semiconductor device modeling;Spectral analysis;Statistical analysis;Stochastic processes;Wideband;Code division multiaccess;homodyne detection;intermodulation distortion;spectral analysis;stochastic processes}, timestamp = {2015.03.04} }`

- M. Brandolini, P. Rossi, D. Manstretta, and F. Svelto, “Toward multistandard mobile terminals – fully integrated receivers requirements and architectures,” Microwave Theory and Techniques, IEEE Transactions on, vol. 53, iss. 3, pp. 1026-1038, 2005.

[Bibtex]`@ARTICLE{2005Brandolini, author = {Brandolini, M. and Rossi, P. and Manstretta, D. and Svelto, F.}, title = {Toward multistandard mobile terminals - fully integrated receivers requirements and architectures}, journal = {Microwave Theory and Techniques, IEEE Transactions on}, year = {2005}, volume = {53}, pages = {1026-1038}, number = {3}, month = {March}, doi = {10.1109/TMTT.2005.843505}, issn = {0018-9480}, keywords = {3G mobile communication;Bluetooth;CMOS integrated circuits;cellular radio;radio receivers;telecommunication terminals;wireless LAN;Bluetooth standard;HiperLAN2 standard;IEEE802.11a standard;IEEE802.11b standard;IEEE802.11g standard;direct conversion CMOS implementation;fully integrated CMOS receiver;low IF receiver architecture;low cost silicon technology;mobile communications;multistandard architecture;multistandard mobile terminal;universal mobile telecommunication system;wireless communication;wireless connectivity;wireless local area network standard;zero IF receiver architecture;Bluetooth;CMOS technology;Communication standards;GSM;Radio frequency;Receivers;Silicon;Telecommunication standards;Wireless LAN;Wireless communication;BiCMOS;Bluetooth;CMOS;global system for mobile communications (GSM);low IF;low-noise amplifier (LNA);mixer;multistandard;radio receivers;universal mobile telecommuniation system (UMTS);voltage-controlled oscillator (VCO);wireless communications;wireless local area networks (LANs);zero IF}, timestamp = {2015.03.04} }`

- M. Brandolini, P. Rossi, D. Sanzogni, and F. Svelto, “A CMOS direct down-converter with outstanding dynamic range performances,” in IEEE-NEWCAS Conference, 2005. The 3rd International, 2005, pp. 5-8.

[Bibtex]`@INPROCEEDINGS{2005Brandolinia, author = {Brandolini, M. and Rossi, P. and Sanzogni, D. and Svelto, F.}, title = {A CMOS direct down-converter with outstanding dynamic range performances}, booktitle = {IEEE-NEWCAS Conference, 2005. The 3rd International}, year = {2005}, pages = {5-8}, month = {June}, doi = {10.1109/NEWCAS.2005.1496718}, keywords = {CMOS integrated circuits;convertors;integrated circuit noise;intermodulation distortion;passive filters;poles and zeros;0.18 micron;1.8 V;4 mA;CMOS direct down-converter;LC filter;RC filter;RF frequency load;dynamic range performance;input-referred noise density;load resistor;second order intermodulation distortion;signal bandwidth;transconductor;Bandwidth;Distortion;Dynamic range;Matched filters;RF signals;Radio frequency;Resistors;Resonant frequency;Signal design;Transconductors}, timestamp = {2015.03.04} }`

- M. Brandolini, P. Rossi, D. Sanzogni, and F. Svelto, “A CMOS direct down-converter with +78dBm minimum IIP2 for 3G cell-phones,” in Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International, 2005, p. 320-601 Vol. 1.

[Bibtex]`@INPROCEEDINGS{2005Brandolinib, author = {Brandolini, M. and Rossi, P. and Sanzogni, D. and Svelto, F.}, title = {A CMOS direct down-converter with +78dBm minimum IIP2 for 3G cell-phones}, booktitle = {Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International}, year = {2005}, pages = {320-601 Vol. 1}, month = {Feb}, doi = {10.1109/ISSCC.2005.1493998}, issn = {0193-6530}, keywords = {3G mobile communication;CMOS integrated circuits;UHF frequency convertors;cellular radio;0.18 micron;1.8 V;3G cellular telephones;4 mA;CMOS direct down-converter;IIP2;Baseband;Capacitors;Filters;Frequency;Impedance;Inductors;Linearity;Surface acoustic waves;Transconductors;Voltage}, timestamp = {2015.03.04} }`

- G. Cusmai, M. Brandolini, P. Rossi, and F. Svelto, “An interference robust 0.18um CMOS 3.1-8GHz receiver front-end for UWB radio,” in Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005, 2005, pp. 157-160.

[Bibtex]`@INPROCEEDINGS{2005Cusmai, author = {Cusmai, G. and Brandolini, M. and Rossi, P. and Svelto, F.}, title = {An interference robust 0.18um CMOS 3.1-8GHz receiver front-end for UWB radio}, booktitle = {Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005}, year = {2005}, pages = {157-160}, month = {Sept}, doi = {10.1109/CICC.2005.1568631}, keywords = {CMOS integrated circuits;low noise amplifiers;low-pass filters;microwave receivers;mixers (circuits);radio receivers;ultra wideband technology;0.18 micron;1 dB;1.8 V;10 mA;3.1 to 8 GHz;5.2 dB;7.3 dB;CMOS technology;WLAN interferer rejection;direct conversion integrated circuit;multiband OFDM ultra-wide-band applications;receiver front-end;second order low pass filter;single-balanced mixer;single-ended low noise amplifier;ultra wideband radio;CMOS integrated circuits;CMOS technology;Interference;Low pass filters;Noise measurement;OFDM;Receivers;Robustness;Ultra wideband technology;Wireless LAN}, timestamp = {2015.03.04} }`

- A. Mazzanti, L. Larcher, R. Brama, and F. Svelto, “A 1.4 GHz-2 GHz wideband CMOS class-E power amplifier delivering 23 dBm peak with 67% PAE,” in Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE, 2005, pp. 425-428.

[Bibtex]`@INPROCEEDINGS{2005Mazzanti, author = {Mazzanti, A. and Larcher, L. and Brama, R. and Svelto, F.}, title = {A 1.4 GHz-2 GHz wideband CMOS class-E power amplifier delivering 23 dBm peak with 67% PAE}, booktitle = {Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE}, year = {2005}, pages = {425-428}, month = {June}, doi = {10.1109/RFIC.2005.1489832}, issn = {1529-2517}, keywords = {CMOS analogue integrated circuits;UHF integrated circuits;UHF power amplifiers;inductors;integrated circuit design;network topology;wideband amplifiers;0.13 micron;1.4 to 2 GHz;CMOS amplifier;MOS capacitive parasitics;cascode topology;device stress;efficiency;integrated inductor;wideband CMOS class-E power amplifier;wideband amplifier;Broadband amplifiers;CMOS technology;Circuit optimization;Inductors;Power amplifiers;Radio frequency;Radiofrequency amplifiers;Stress;Transceivers;Voltage}, timestamp = {2015.03.04} }`

- A. Mazzanti, L. Larcher, and F. Svelto, “Balanced CMOS LC-tank analog frequency dividers for quadrature LO generation,” in Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005, 2005, pp. 575-578.

[Bibtex]`@INPROCEEDINGS{2005Mazzantia, author = {Mazzanti, A. and Larcher, L. and Svelto, F.}, title = {Balanced CMOS LC-tank analog frequency dividers for quadrature LO generation}, booktitle = {Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005}, year = {2005}, pages = {575-578}, month = {Sept}, doi = {10.1109/CICC.2005.1568733}, keywords = {CMOS integrated circuits;Q-factor;analogue circuits;frequency dividers;injection locked oscillators;signal generators;0.18 micron;1.5 pF;8 mA;CMOS prototypes;LC-tank balanced divider;analog frequency dividers;band edge;image rejection;injection locked frequency dividers;operation bandwidth;output capacitance;quadrature LO generation;quadrature accuracy;regenerative circuit;side band up-converter;signal generation;tank quality factor;Bandwidth;CMOS technology;Capacitance;Frequency conversion;Inductors;Injection-locked oscillators;Performance evaluation;Prototypes;Q factor;Signal generators}, timestamp = {2015.03.04} }`

- P. Rossi, A. Liscidini, M. Brandolini, and F. Svelto, “A variable gain RF front-end, based on a Voltage-Voltage feedback LNA, for multistandard applications,” Solid-State Circuits, IEEE Journal of, vol. 40, iss. 3, pp. 690-697, 2005.

[Bibtex]`@ARTICLE{2005Rossi, author = {Rossi, P. and Liscidini, A. and Brandolini, M. and Svelto, F.}, title = {A variable gain RF front-end, based on a Voltage-Voltage feedback LNA, for multistandard applications}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2005}, volume = {40}, pages = {690-697}, number = {3}, month = {March}, doi = {10.1109/JSSC.2005.843631}, issn = {0018-9200}, keywords = {BiCMOS integrated circuits;Ge-Si alloys;IEEE standards;feedback amplifiers;radio receivers;wireless LAN;0.25 micron;2.5 V;2.5 dB;31.5 dB;5 to 6 GHz;BiCMOS process;HiSWANa;HiperLAN2;IEEE 802.11a;Q mixers;RF front-ends;RF receiver;SiGe;WLAN applications;direct conversion;feedback amplifier;feedback circuits;frequency transfer function;low noise amplifier;multistandard receivers;narrow-band filter;power consumption;voltage-voltage feedback;wireless local area network;Acoustic reflection;Feedback circuits;Filters;Gain;Impedance;Multi-stage noise shaping;Narrowband;Radio frequency;Transfer functions;Voltage;BiCMOS;HiSWANa;HiperLAN2;IEEE 802.11a;RF receiver;direct conversion;feedback amplifier;low noise amplifier (LNA);mixer;multiband;multistandard;wireless local area network (WLAN)}, timestamp = {2015.03.04} }`

- M. Yavari, O. Shoaei, and F. Svelto, “Hybrid cascode compensation for two-stage CMOS operational amplifiers,” in Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on, 2005, p. 1565-1568 Vol. 2.

[Bibtex]`@INPROCEEDINGS{2005Yavari, author = {Yavari, M. and Shoaei, O. and Svelto, F.}, title = {Hybrid cascode compensation for two-stage CMOS operational amplifiers}, booktitle = {Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on}, year = {2005}, pages = {1565-1568 Vol. 2}, month = {May}, doi = {10.1109/ISCAS.2005.1464900}, keywords = {CMOS analogue integrated circuits;circuit simulation;compensation;operational amplifiers;poles and zeros;transfer functions;OTA;frequency compensation methods;hybrid cascode compensation;open loop signal transfer function;poles and zeros estimation;two-stage CMOS operational amplifiers;Bandwidth;CMOS integrated circuits;Capacitors;Costs;Frequency;Hybrid integrated circuits;Operational amplifiers;Poles and zeros;Resistors;Transfer functions}, timestamp = {2015.03.04} }`

### 2004

- F. De Bernarclinis, S. Gambini, R. Vincis, F. Svelto, A. S. Vincentelli, and R. Castello, “Design space exploration for a UMTS front-end exploiting analog platforms,” in Computer Aided Design, 2004. ICCAD-2004. IEEE/ACM International Conference on, 2004, pp. 923-930.

[Bibtex]`@INPROCEEDINGS{2004DeBernarclinis, author = {De Bernarclinis, F. and Gambini, S. and Vincis, R. and Svelto, F. and Vincentelli, A.S. and Castello, R.}, title = {Design space exploration for a UMTS front-end exploiting analog platforms}, booktitle = {Computer Aided Design, 2004. ICCAD-2004. IEEE/ACM International Conference on}, year = {2004}, pages = {923-930}, month = {Nov}, doi = {10.1109/ICCAD.2004.1382708}, issn = {1092-3152}, keywords = {3G mobile communication;analogue circuits;circuit complexity;integrated circuit design;UMTS front-end;analog platforms;circuit-level characteristics;design space exploration;dynamic range requirement;hand optimized design;platform-based design;second order effects;transistor level design;universal mobile telecommunication system;3G mobile communication;Circuit simulation;Design methodology;Design optimization;Digital systems;Dynamic range;Libraries;Power system modeling;Radio frequency;Space exploration}, timestamp = {2015.03.04} }`

- F. Gatta, D. Manstretta, P. Rossi, and F. Svelto, “A fully integrated 0.18-um CMOS direct conversion receiver front-end with on-chip LO for UMTS,” Solid-State Circuits, IEEE Journal of, vol. 39, iss. 1, pp. 15-23, 2004.

[Bibtex]`@ARTICLE{2004Gatta, author = {Gatta, F. and Manstretta, D. and Rossi, P. and Svelto, F.}, title = {A fully integrated 0.18-um CMOS direct conversion receiver front-end with on-chip LO for UMTS}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2004}, volume = {39}, pages = {15-23}, number = {1}, month = {Jan}, doi = {10.1109/JSSC.2003.820865}, issn = {0018-9200}, keywords = {3G mobile communication;CMOS integrated circuits;VHF amplifiers;VHF oscillators;frequency convertors;radio receivers;radiofrequency integrated circuits;0.18 mm;1.8 V;135 MHz;21 mA;21 to 47 dB;5.6 dB;CMOS process;UMTS;Universal Mobile Telecommunication System;carrier frequency;continuous-time DC offset removal;direct-conversion IC;dynamic range front-end blocks;fully integrated direct conversion receiver front-end;in-band IIP3;local oscillator generation circuits;low-power superharmonic injection-locking technique;minimum IIP2;on-chip LO;out-of-band IIP3;phase noise;quadrature generation;quadrature mixers;variable gain amplifiers;variable gain low-noise amplifier;3G mobile communication;CMOS integrated circuits;DC generators;Dynamic range;Frequency measurement;Gain measurement;Local oscillators;Low-noise amplifiers;Noise measurement;Phase measurement}, timestamp = {2015.03.04} }`

- A. Liscidini, M. Brandolini, P. Rossi, F. Torrisi, and F. Svelto, “Design methodology of feedback-LNAs for GHz applications,” in Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, 2004, pp. 253-256.

[Bibtex]`@INPROCEEDINGS{2004Liscidini, author = {Liscidini, A. and Brandolini, M. and Rossi, P. and Torrisi, F. and Svelto, F.}, title = {Design methodology of feedback-LNAs for GHz applications}, booktitle = {Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting}, year = {2004}, pages = {253-256}, month = {Sept}, doi = {10.1109/BIPOL.2004.1365793}, keywords = {Circuit noise;Current density;Design methodology;Frequency;Impedance matching;Linearity;Narrowband;Noise figure;Noise measurement;Tunable circuits and devices}, timestamp = {2015.03.04} }`

- A. Mazzanti and F. Svelto, “Injection locked oscillators for quadrature generation at radio frequency,” in Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on, 2004, pp. 124-127.

[Bibtex]`@INPROCEEDINGS{2004Mazzanti, author = {Mazzanti, A. and Svelto, F.}, title = {Injection locked oscillators for quadrature generation at radio frequency}, booktitle = {Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on}, year = {2004}, pages = {124-127}, month = {Dec}, doi = {10.1109/ICM.2004.1434224}, keywords = {CMOS integrated circuits;injection locked oscillators;low-power electronics;power consumption;radiofrequency oscillators;signal generators;transceivers;voltage-controlled oscillators;0.18 micron;CMOS technology;RF transceivers;injection locked oscillators;low power consumption;quadrature signal generators;radiofrequency transceivers;CMOS technology;Degradation;Energy consumption;Filters;Injection-locked oscillators;Phase noise;Radio frequency;Signal generators;Transceivers;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- A. Mazzanti, P. Uggetti, R. Battagia, and F. Svelto, “Analysis and design of a dual band reconfigurable VCO,” in Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on, 2004, pp. 37-40.

[Bibtex]`@INPROCEEDINGS{2004Mazzantia, author = {Mazzanti, A. and Uggetti, P. and Battagia, R. and Svelto, F.}, title = {Analysis and design of a dual band reconfigurable VCO}, booktitle = {Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on}, year = {2004}, pages = {37-40}, month = {Dec}, doi = {10.1109/ICECS.2004.1399608}, keywords = {CMOS analogue integrated circuits;UHF oscillators;inductors;reconfigurable architectures;0.13 micron;1.8 GHz;900 MHz;CMOS;GSM900/1800 VCO;LC VCO;dual band reconfigurable VCO;oscillation frequency switching;series inductor switching;tank Q-factor;tank reactive element;CMOS technology;Dual band;Energy consumption;Frequency;Inductors;MOS devices;Phase noise;Switches;Tuning;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- A. Mazzanti, P. Uggetti, and F. Svelto, “Injection locked coupled VCOs for low phase noise and high accuracy quadrature generation,” in Norchip Conference, 2004. Proceedings, 2004, pp. 51-54.

[Bibtex]`@INPROCEEDINGS{2004Mazzantib, author = {Mazzanti, A. and Uggetti, P. and Svelto, F.}, title = {Injection locked coupled VCOs for low phase noise and high accuracy quadrature generation}, booktitle = {Norchip Conference, 2004. Proceedings}, year = {2004}, pages = {51-54}, month = {Nov}, doi = {10.1109/NORCHP.2004.1423820}, keywords = {CMOS technology;Circuits;Degradation;Noise generators;Noise measurement;Phase noise;Power generation;Prototypes;Signal generators;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- A. Mazzanti, P. Uggetti, and F. Svelto, “Analysis and design of injection-locked LC dividers for quadrature generation,” Solid-State Circuits, IEEE Journal of, vol. 39, iss. 9, pp. 1425-1433, 2004.

[Bibtex]`@ARTICLE{2004Mazzantic, author = {Mazzanti, A. and Uggetti, P. and Svelto, F.}, title = {Analysis and design of injection-locked LC dividers for quadrature generation}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2004}, volume = {39}, pages = {1425-1433}, number = {9}, month = {Sept}, doi = {10.1109/JSSC.2004.831596}, issn = {0018-9200}, keywords = {3G mobile communication;CMOS integrated circuits;frequency dividers;injection locked oscillators;integrated circuit modelling;low-power electronics;phase noise;radio receivers;voltage-controlled oscillators;0.18 micron;2 mA;CMOS integrated circuit;RF CMOS;RF receivers;Universal Mobile Telecommunication System;circuit modeling;frequency locking;injection locking;injection-locked LC dividers;locking band;phase deviation;phase noise;quadrature generation;regenerative frequency dividers;tank quality factor;voltage-controlled oscillators;3G mobile communication;CMOS technology;Circuits;Frequency conversion;Injection-locked oscillators;Local oscillators;Phase measurement;Phase noise;Radio frequency;Voltage-controlled oscillators;Direct conversion;RF CMOS;RF receivers;UMTS;VCO;frequency dividers;injection locking;phase noise;quadrature;voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- P. Rossi, A. Liscidini, M. Brandolini, and F. Svelto, “A 2.5dB NF direct-conversion receiver front-end for HiperLAN2/IEEE802.11a,” in Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International, 2004, p. 102-516 Vol.1.

[Bibtex]`@INPROCEEDINGS{2004Rossi, author = {Rossi, P. and Liscidini, A. and Brandolini, M. and Svelto, F.}, title = {A 2.5dB NF direct-conversion receiver front-end for HiperLAN2/IEEE802.11a}, booktitle = {Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International}, year = {2004}, pages = {102-516 Vol.1}, month = {Feb}, doi = {10.1109/ISSCC.2004.1332614}, issn = {0193-6530}, keywords = {BiCMOS analogue integrated circuits;Ge-Si alloys;IEEE standards;MMIC amplifiers;MMIC mixers;differential amplifiers;feedback amplifiers;integrated circuit noise;radio receivers;transceivers;wireless LAN;16 mA;2.5 V;31.5 dB;4.9 to 5.825 GHz;BiCMOS technology;HiperLAN2/IEEE802.11a;I&Q variable-gain mixers;SiGe;differential LNA;direct-conversion receiver frontend;frequency-tunable LNA;multi-standard applications;plastic package;voltage-voltage feedback;Circuit noise;Circuit topology;Feedback circuits;Frequency;Gain;Impedance matching;Inductors;Linearity;MOS devices;Noise measurement}, timestamp = {2015.03.04} }`

### 2003

- D. Manstretta, M. Brandolini, and F. Svelto, “Second-order intermodulation mechanisms in CMOS downconverters,” Solid-State Circuits, IEEE Journal of, vol. 38, iss. 3, pp. 394-406, 2003.

[Bibtex]`@ARTICLE{2003Manstretta, author = {Manstretta, D. and Brandolini, M. and Svelto, F.}, title = {Second-order intermodulation mechanisms in CMOS downconverters}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2003}, volume = {38}, pages = {394-406}, number = {3}, month = {Mar}, doi = {10.1109/JSSC.2002.808310}, issn = {0018-9200}, keywords = {CMOS analogue integrated circuits;frequency convertors;intermodulation distortion;mixers (circuits);0.18 micron;CMOS active downconverter;UMTS;direct conversion architecture;fully-integrated wireless receiver;linear direct-conversion CMOS mixer;low intermediate frequency architecture;parasitic capacitance;second-order input intercept point;second-order intermodulation distortion;self-mixing;superheterodyne receiver;switching-pair mismatch;switching-stage common source;transconductor nonlinearity;3G mobile communication;Bandwidth;CMOS technology;Frequency conversion;Intermodulation distortion;Mixers;Parasitic capacitance;Radio frequency;Receivers;Transconductors}, timestamp = {2015.03.04} }`

- A. Mazzanti, P. Uggetti, P. Rossi, and F. Svelto, “Injection locking LC dividers for low power quadrature generation,” in Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003, 2003, pp. 563-566.

[Bibtex]`@INPROCEEDINGS{2003Mazzanti, author = {Mazzanti, A. and Uggetti, P. and Rossi, P. and Svelto, F.}, title = {Injection locking LC dividers for low power quadrature generation}, booktitle = {Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003}, year = {2003}, pages = {563-566}, month = {Sept}, doi = {10.1109/CICC.2003.1249461}, keywords = {CMOS integrated circuits;frequency dividers;injection locked oscillators;low-power electronics;phase noise;0.18 micron;4 mA;CMOS direct conversion receiver;I/Q generation;coupled voltage controlled oscillators;frequency locking range;injection locking LC dividers;injection locking frequency dividers;locking band;low power quadrature generation;phase noise;quadrature accuracy;quadrature phase deviation;regenerative frequency dividers;CMOS technology;Capacitance;Energy consumption;Frequency conversion;Injection-locked oscillators;Phase measurement;Phase noise;Power generation;Semiconductor device modeling;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- G. Verzellesi, A. Basile, A. Mazzanti, C. Canali, G. Meneghesso, and E. Zanoni, “Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs,” Electronics Letters, vol. 39, iss. 10, pp. 810-811, 2003.

[Bibtex]`@ARTICLE{2003Verzellesi, author = {Verzellesi, G. and Basile, A. and Mazzanti, A. and Canali, C. and Meneghesso, G. and Zanoni, E.}, title = {Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs}, journal = {Electronics Letters}, year = {2003}, volume = {39}, pages = {810-811}, number = {10}, month = {May}, doi = {10.1049/el:20030529}, issn = {0013-5194}, keywords = {III-V semiconductors;aluminium compounds;field effect transistors;gallium arsenide;hole traps;semiconductor device models;surface states;2D device simulations;AlGaAs-GaAs;GaAs HFETs;double-recess power HFETs;drain current transient;heterostructure FETs;heterostructure field-effect transistors;hole traps;surface-trap-induced gate-lag effects;temperature impact;turn-on waveforms;ungated recess surface}, timestamp = {2015.03.04} }`

- G. Verzellesi, A. Basile, A. Mazzanti, A. Cavallini, and C. Canali, “Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs,” Electronics Letters, vol. 39, iss. 21, pp. 1548-1549, 2003.

[Bibtex]`@ARTICLE{2003Verzellesia, author = {Verzellesi, G. and Basile, A. and Mazzanti, A. and Cavallini, A. and Canali, C.}, title = {Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs}, journal = {Electronics Letters}, year = {2003}, volume = {39}, pages = {1548-1549}, number = {21}, month = {Oct}, doi = {10.1049/el:20030950}, issn = {0013-5194}, keywords = {III-V semiconductors;aluminium compounds;deep level transient spectroscopy;deep levels;electron traps;field effect transistors;gallium arsenide;AlGaAs-GaAs;AlGaAs-GaAs HFETs;DC-to-RF dispersion effects;I-DLTS experiments;current deep level transient spectroscopy;deep-level traps;energetic localisation;gate-lag transconductance frequency dispersion;heterostructure FETs;heterostructure field-effect transistors;spatial localisation}, timestamp = {2015.03.04} }`

- G. Verzellesi, A. Mazzanti, A. F. Basile, A. Boni, E. Zanoni, and C. Canali, “Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs),” Electron Devices, IEEE Transactions on, vol. 50, iss. 8, pp. 1733-1740, 2003.

[Bibtex]`@ARTICLE{2003Verzellesib, author = {Verzellesi, G. and Mazzanti, A. and Basile, A.F. and Boni, A. and Zanoni, E. and Canali, C.}, title = {Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)}, journal = {Electron Devices, IEEE Transactions on}, year = {2003}, volume = {50}, pages = {1733-1740}, number = {8}, month = {Aug}, doi = {10.1109/TED.2003.815134}, issn = {0018-9383}, keywords = {III-V semiconductors;aluminium compounds;deep levels;gallium arsenide;hole traps;junction gate field effect transistors;surface states;AlGaAs-GaAs;AlGaAs-GaAs heterostructure field effect transistor;acceptor states;deep levels;device switching;drain bias;gate lag;hole traps;numerical simulation;off-state gate-source voltage;surface states;temperature dependence;turn-on transient;ungated recess surface;Delay;Electron traps;FETs;HEMTs;III-V semiconductor materials;Irrigation;MODFETs;Numerical simulation;Radio frequency;Surface charging}, timestamp = {2015.03.04} }`

- G. Verzellesi, A. Mazzanti, C. Canali, G. Meneghesso, A. Chini, and E. Zanoni, “Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs,” in GaAs Reliability Workshop, 2003. Proceedings, 2003, pp. 155-156.

[Bibtex]`@INPROCEEDINGS{2003Verzellesic, author = {Verzellesi, G. and Mazzanti, A. and Canali, C. and Meneghesso, G. and Chini, A. and Zanoni, E.}, title = {Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs}, booktitle = {GaAs Reliability Workshop, 2003. Proceedings}, year = {2003}, pages = {155-156}, doi = {10.1109/GAASRW.2003.183773}, keywords = {Aluminum gallium nitride;Dispersion;FETs;Gallium nitride;HEMTs;Impact ionization;MODFETs;Polarization;Pulse measurements;Temperature measurement}, timestamp = {2015.03.04} }`

### 2002

- A. F. Basile, A. Mazzanti, E. Manzini, G. Verzellesi, C. Canali, R. Pierobon, and C. Lanzieri, “Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs,” in Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on, 2002, pp. 63-68.

[Bibtex]`@INPROCEEDINGS{2002Basile, author = {Basile, A.F. and Mazzanti, A. and Manzini, E. and Verzellesi, G. and Canali, C. and Pierobon, R. and Lanzieri, C.}, title = {Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs}, booktitle = {Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on}, year = {2002}, pages = {63-68}, month = {Nov}, doi = {10.1109/EDMO.2002.1174931}, keywords = {III-V semiconductors;aluminium compounds;electronic engineering computing;gallium arsenide;high electron mobility transistors;semiconductor device measurement;semiconductor device models;transient response;AlGaAs-InGaAs;AlGaAs/InGaAs PHEMT drain-lag phenomena;acceptor-like surface traps;gate source/drain contact ungated surfaces;pseudomorphic HEMT gate-lag phenomena;pulsed PHEMT characteristics;transient response;Analytical models;Doping;Gallium arsenide;Heating;Indium gallium arsenide;Irrigation;Numerical analysis;PHEMTs;Transient analysis;Voltage}, timestamp = {2015.03.04} }`

- F. Gatta, D. Manstretta, P. Rossi, and F. Svelto, “A direct conversion CMOS receiver front-end with on-chip LO for UMTS,” in Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European, 2002, pp. 443-446.

[Bibtex]`@INPROCEEDINGS{2002Gatta, author = {Gatta, F. and Manstretta, D. and Rossi, P. and Svelto, F.}, title = {A direct conversion CMOS receiver front-end with on-chip LO for UMTS}, booktitle = {Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European}, year = {2002}, pages = {443-446}, month = {Sept}, keywords = {3G mobile communication;CMOS technology;Frequency conversion;Injection-locked oscillators;Mixers;Noise measurement;Performance evaluation;Phase measurement;Semiconductor device measurement;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- D. Manstretta, R. Castello, F. Gatta, P. Rossi, and F. Svelto, “A 0.18-um CMOS direct-conversion receiver front-end for UMTS,” in Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International, 2002, p. 240-463 vol.1.

[Bibtex]`@INPROCEEDINGS{2002Manstretta, author = {Manstretta, D. and Castello, R. and Gatta, F. and Rossi, P. and Svelto, F.}, title = {A 0.18-um CMOS direct-conversion receiver front-end for UMTS}, booktitle = {Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International}, year = {2002}, volume = {1}, pages = {240-463 vol.1}, month = {Feb}, doi = {10.1109/ISSCC.2002.993025}, keywords = {CMOS analogue integrated circuits;UHF integrated circuits;UHF mixers;cellular radio;radio receivers;0.18 micron;1.8 V;1.98 to 2.1 GHz;10 kHz to 1.92 MHz;15 mA;CMOS direct-conversion receiver front-end;LNA;UMTS receiver;quadrature mixers;wireless receivers;1f noise;3G mobile communication;Gain;Low-noise amplifiers;Noise figure;Radio frequency;Radio transmitters;Radiofrequency amplifiers;Receivers;Signal to noise ratio}, timestamp = {2015.03.04} }`

- D. Manstretta and F. Svelto, “Analysis and optimization of IIP2 in CMOS direct down-converters,” in Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002, 2002, pp. 243-246.

[Bibtex]`@INPROCEEDINGS{2002Manstrettaa, author = {Manstretta, D. and Svelto, F.}, title = {Analysis and optimization of IIP2 in CMOS direct down-converters}, booktitle = {Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002}, year = {2002}, pages = {243-246}, doi = {10.1109/CICC.2002.1012805}, keywords = {CMOS analogue integrated circuits;UHF frequency convertors;UHF integrated circuits;UHF mixers;circuit optimisation;integrated circuit modelling;intermodulation distortion;radio receivers;0.18 micron;1.8 V;3.2 mA;CMOS direct down-converters;IIP2;RF self-mixing;RF to LO leakage;device mismatches;device nonlinearity;fully integrated CMOS UMTS receiver front-end;intuitive model;mixer design;second order intermodulation;3G mobile communication;Bandwidth;Filters;Frequency conversion;Mixers;RF signals;Radio frequency;Receivers;Semiconductor device modeling;Tail}, timestamp = {2015.03.04} }`

- A. Mazzanti, G. Verzellesi, C. Canali, G. Meneghesso, and E. Zanoni, “Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs,” Electron Device Letters, IEEE, vol. 23, iss. 7, pp. 383-385, 2002.

[Bibtex]`@ARTICLE{2002Mazzanti, author = {Mazzanti, A. and Verzellesi, G. and Canali, C. and Meneghesso, G. and Zanoni, E.}, title = {Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs}, journal = {Electron Device Letters, IEEE}, year = {2002}, volume = {23}, pages = {383-385}, number = {7}, month = {July}, doi = {10.1109/LED.2002.1015205}, issn = {0741-3106}, keywords = {III-V semiconductors;aluminium compounds;deep levels;field effect transistors;gallium arsenide;impact ionisation;semiconductor device measurement;semiconductor device models;AlGaAs-GaAs;AlGaAs/GaAs;HFETs;capture phenomena;conductive-channel widening;deep levels;doped-channel heterostructure field effect transistors;drain-current increase;drain-source voltages;hole emission;impact-ionization-generated holes;kink dynamics;surface deep acceptors;two-dimensional device simulations;Gallium arsenide;HEMTs;Irrigation;MODFETs;Numerical simulation;Pulse measurements;Surface discharges;Time measurement;Voltage}, timestamp = {2015.03.04} }`

- A. Mazzanti, G. Verzellesi, G. Sozzi, R. Menozzi, C. Lanzieri, and C. Canali, “Physical investigation of trap-related effects in power HFETs and their reliability implications,” Device and Materials Reliability, IEEE Transactions on, vol. 2, iss. 3, pp. 65-71, 2002.

[Bibtex]`@ARTICLE{2002Mazzantia, author = {Mazzanti, A. and Verzellesi, G. and Sozzi, G. and Menozzi, R. and Lanzieri, C. and Canali, C.}, title = {Physical investigation of trap-related effects in power HFETs and their reliability implications}, journal = {Device and Materials Reliability, IEEE Transactions on}, year = {2002}, volume = {2}, pages = {65-71}, number = {3}, month = {Sep}, doi = {10.1109/TDMR.2002.804512}, issn = {1530-4388}, keywords = {III-V semiconductors;aluminium compounds;gallium arsenide;hot carriers;impact ionisation;interface states;microwave field effect transistors;microwave power transistors;power field effect transistors;semiconductor device models;surface states;Al0.25Ga0.75As-GaAs;GaAs power HFETs;channel-buffer interface trap density;dc output curve kink;drain current;drain current hot-carrier degradation;hot-carrier-stressed HFETs;hydrodynamic model;impact ionization;impact-ionization-dominated reverse gate current;intertwined phenomena;kink effect;microwave power FETs;reliability implications;source-gate recess surface traps;trap-related effects;trapping effects;two-dimensional numerical simulations;Degradation;Gallium arsenide;HEMTs;Hot carrier effects;Hot carriers;Hydrodynamics;Impact ionization;MODFETs;Numerical simulation;Performance gain}, timestamp = {2015.03.04} }`

- F. Svelto and R. Castello, “A bond-wire inductor-MOS varactor VCO tunable from 1.8 to 2.4 GHz,” Microwave Theory and Techniques, IEEE Transactions on, vol. 50, iss. 1, pp. 403-407, 2002.

[Bibtex]`@ARTICLE{2002Svelto, author = {Svelto, F. and Castello, R.}, title = {A bond-wire inductor-MOS varactor VCO tunable from 1.8 to 2.4 GHz}, journal = {Microwave Theory and Techniques, IEEE Transactions on}, year = {2002}, volume = {50}, pages = {403-407}, number = {1}, month = {Jan}, doi = {10.1109/22.981292}, issn = {0018-9480}, keywords = {CMOS analogue integrated circuits;Q-factor;UHF integrated circuits;UHF oscillators;circuit tuning;inductors;phase noise;transceivers;varactors;voltage-controlled oscillators;1.8 to 2.4 GHz;2 V;LC-tank CMOS VCO;bond-wire inductor-MOS varactor VCO;device noise coefficient;figure-of-merit;optimum design;phase noise;power consumption;quality factor;tunable VCO;Bonding;Energy consumption;Noise level;Phase noise;Prototypes;Q factor;Signal to noise ratio;Varactors;Voltage;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

### 2001

- F. Gatta, E. Sacchi, F. Svelto, P. Vilmercati, and R. Castello, “A 2-dB noise figure 900-MHz differential CMOS LNA,” Solid-State Circuits, IEEE Journal of, vol. 36, iss. 10, pp. 1444-1452, 2001.

[Bibtex]`@ARTICLE{2001Gatta, author = {Gatta, F. and Sacchi, E. and Svelto, F. and Vilmercati, P. and Castello, R.}, title = {A 2-dB noise figure 900-MHz differential CMOS LNA}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2001}, volume = {36}, pages = {1444-1452}, number = {10}, month = {Oct}, doi = {10.1109/4.953472}, issn = {0018-9200}, keywords = {CMOS analogue integrated circuits;UHF amplifiers;UHF integrated circuits;differential amplifiers;integrated circuit noise;0.35 micron;17.5 dB;2 dB;2.7 V;8 mA;900 MHz;RF integrated circuit;circuit topology;differential CMOS LNA;inductively degenerated input stage;moderate inversion model;noise figure;power dissipation;programmable gain;CMOS technology;Circuit noise;Circuit topology;Energy consumption;Low-noise amplifiers;MOS devices;Noise figure;Noise measurement;Radio frequency;Radiofrequency amplifiers}, timestamp = {2015.03.04} }`

- D. Manstretta, R. Castello, and F. Svelto, “Low 1/f noise CMOS active mixers for direct conversion,” Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on, vol. 48, iss. 9, pp. 846-850, 2001.

[Bibtex]`@ARTICLE{2001Manstretta, author = {Manstretta, D. and Castello, R. and Svelto, F.}, title = {Low 1/f noise CMOS active mixers for direct conversion}, journal = {Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on}, year = {2001}, volume = {48}, pages = {846-850}, number = {9}, month = {Sep}, doi = {10.1109/82.964998}, issn = {1057-7130}, keywords = {1/f noise;CMOS analogue integrated circuits;UHF integrated circuits;UHF mixers;flicker noise;integrated circuit design;integrated circuit noise;nonlinear network analysis;nonlinear network synthesis;0.35 micron;1/f noise;100 Hz to 3 kHz;18 dB;2.7 V;6 mA;900 MHz;CMOS active mixers;Gilbert cell mixer;RFIC;ReFlex standard;analog integrated circuits;direct conversion;flicker noise;frequency conversion;input stage;low 1/f active mixers;low biasing current;nMOS transconductors;noise analysis;pMOS transconductors;switching stage pMOS devices;Active noise reduction;Amplitude modulation;Image converters;MOS devices;Mixers;Noise measurement;Performance gain;Prototypes;Radio frequency;Transceivers}, timestamp = {2015.03.04} }`

- A. Mazzanti, G. Verzellesi, L. Vicini, C. Canali, A. Chini, G. Meneghesso, E. Zanoni, and C. Lanzieri, “Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs,” in Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on, 2001, pp. 137-142.

[Bibtex]`@INPROCEEDINGS{2001Mazzanti, author = {Mazzanti, A. and Verzellesi, G. and Vicini, L. and Canali, C. and Chini, A. and Meneghesso, G. and Zanoni, E. and Lanzieri, C.}, title = {Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs}, booktitle = {Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on}, year = {2001}, pages = {137-142}, doi = {10.1109/EDMO.2001.974297}, keywords = {III-V semiconductors;aluminium compounds;deep levels;field effect transistors;gallium arsenide;hole traps;impact ionisation;semiconductor device measurement;semiconductor device models;2D device simulations;AlGaAs-GaAs;AlGaAs/GaAs HFETs;drain-current time constant;high drain-source voltages;hole capture rate;hole emission;impact-ionization-generated holes;kink dynamics;negative trapped charge;pulsed operation;recess surface defects;surface deep levels;surface hole density;FETs;Gallium arsenide;HEMTs;III-V semiconductor materials;Impact ionization;MODFETs;Pulse measurements;Stress measurement;Surface discharges;Voltage}, timestamp = {2015.03.04} }`

- V. Re, I. Bietti, R. Castello, M. Manghisoni, V. Speziali, and F. Svelto, “Experimental study and modeling of the white noise sources in submicron Pand N-MOSFETs,” Nuclear Science, IEEE Transactions on, vol. 48, iss. 4, pp. 1577-1586, 2001.

[Bibtex]`@ARTICLE{2001Re, author = {Re, V. and Bietti, I. and Castello, R. and Manghisoni, M. and Speziali, V. and Svelto, F.}, title = {Experimental study and modeling of the white noise sources in submicron Pand N-MOSFETs}, journal = {Nuclear Science, IEEE Transactions on}, year = {2001}, volume = {48}, pages = {1577-1586}, number = {4}, month = {Aug}, doi = {10.1109/23.958399}, issn = {0018-9499}, keywords = {MOSFET;hot carriers;nuclear electronics;semiconductor device models;semiconductor device noise;thermal noise;channel thermal noise;gate geometries;gate-to-source overdrive voltages;hot carriers;low-power circuits;noise-related parameters;short-channel effects;submicron N-MOSFETs;submicron P-MOSFETs;submicron gate process;substrate parasitic resistors;velocity saturation;white noise sources;CMOS technology;Circuit noise;Detectors;Equations;Geometry;Hot carriers;MOSFET circuits;Semiconductor device modeling;Voltage;White noise}, timestamp = {2015.03.04} }`

- F. Svelto, S. Deantoni, G. Montagna, and R. Castello, “Implementation of a CMOS LNA plus mixer for GPS applications with no external components,” Very Large Scale Integration (VLSI) Systems, IEEE Transactions on, vol. 9, iss. 1, pp. 100-104, 2001.

[Bibtex]`@ARTICLE{2001Svelto, author = {Svelto, F. and Deantoni, S. and Montagna, G. and Castello, R.}, title = {Implementation of a CMOS LNA plus mixer for GPS applications with no external components}, journal = {Very Large Scale Integration (VLSI) Systems, IEEE Transactions on}, year = {2001}, volume = {9}, pages = {100-104}, number = {1}, month = {Feb}, doi = {10.1109/92.920823}, issn = {1063-8210}, keywords = {CMOS analogue integrated circuits;Global Positioning System;UHF amplifiers;UHF integrated circuits;UHF mixers;differential amplifiers;low-power electronics;0.35 micron;1.3 GHz;2.8 V;3.8 dB;40 dB;8 mA;GPS;Gilbert cell mixer;RF front-end;differential CMOS LNA;low-power design;Frequency measurement;Gain measurement;Global Positioning System;Impedance matching;Linearity;MOS devices;Resonance;Topology;Tuning;Varactors}, timestamp = {2015.03.04} }`

### 2000

- E. Sacchi, I. Bietti, F. Gatta, F. Svelto, and R. Castello, “A 2 dB NF, fully differential, variable gain, 900 MHz CMOS LNA,” in VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on, 2000, pp. 94-97.

[Bibtex]`@INPROCEEDINGS{2000Sacchi, author = {Sacchi, E. and Bietti, I. and Gatta, F. and Svelto, F. and Castello, R.}, title = {A 2 dB NF, fully differential, variable gain, 900 MHz CMOS LNA}, booktitle = {VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on}, year = {2000}, pages = {94-97}, month = {June}, doi = {10.1109/VLSIC.2000.852860}, keywords = {CMOS analog integrated circuits;Circuit tuning;Differential amplifiers;Field effect MMIC;Inductors;MMIC amplifiers;UHF amplifiers;UHF integrated circuits;2 dB;22 dB;8 mA;900 MHz;CMOS;IIP3;LNA;SMD inductor;fully differential amplifier;inductively degenerated pairs;on-chip gate spiral inductor;packaged dies;shunt configuration;tuning;variable gain;voltage gain;Active noise reduction;CMOS technology;Cutoff frequency;Gain;Inductors;MOS devices;Noise figure;Noise measurement;Shunt (electrical);Topology}, timestamp = {2015.03.04} }`

- F. Svelto, S. Deantoni, and R. Castello, “A 1 mA, -120.5 dbc/Hz at 600 kHz from 1.9 GHz fully tuneable LC CMOS VCO,” in Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000, 2000, pp. 577-580.

[Bibtex]`@INPROCEEDINGS{2000Svelto, author = {Svelto, F. and Deantoni, S. and Castello, R.}, title = {A 1 mA, -120.5 dbc/Hz at 600 kHz from 1.9 GHz fully tuneable LC CMOS VCO}, booktitle = {Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000}, year = {2000}, pages = {577-580}, doi = {10.1109/CICC.2000.852734}, keywords = {CMOS analogue integrated circuits;Q-factor;UHF integrated circuits;UHF oscillators;circuit tuning;integrated circuit design;integrated circuit noise;phase noise;varactors;variable-frequency oscillators;voltage-controlled oscillators;0.35 micron;1 mA;1.8 to 2.45 GHz;2 V;LC-tank VCO;MOS varactor;Si;bondwire inductor;fully tuneable LC CMOS VCO;phase noise minimisation;Bonding;CMOS technology;Frequency;Inductors;Phase noise;Q factor;Topology;Tuning;Varactors;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- F. Svelto, S. Deantoni, and R. Castello, “A 1.3 GHz low-phase noise fully tunable CMOS LC VCO,” Solid-State Circuits, IEEE Journal of, vol. 35, iss. 3, pp. 356-361, 2000.

[Bibtex]`@ARTICLE{2000Sveltoa, author = {Svelto, F. and Deantoni, S. and Castello, R.}, title = {A 1.3 GHz low-phase noise fully tunable CMOS LC VCO}, journal = {Solid-State Circuits, IEEE Journal of}, year = {2000}, volume = {35}, pages = {356-361}, number = {3}, month = {March}, doi = {10.1109/4.826817}, issn = {0018-9200}, keywords = {CMOS analogue integrated circuits;UHF integrated circuits;UHF oscillators;circuit tuning;compensation;integrated circuit design;phase noise;varactors;voltage-controlled oscillators;1.1 to 1.45 GHz;2 V;6 mA;VCO gain variations;compensation;current consumption;fully tunable CMOS LC VCO;low-phase noise circuit;metal-oxide-silicon varactor;oscillation frequency;process variations;Bonding;CMOS process;Frequency;Inductors;Performance evaluation;Phase noise;Prototypes;Spirals;Varactors;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- F. Svelto, S. Deantoni, G. Montagna, and R. Castello, “An 8 mA, 3.8 dB NF, 40 dB gain CMOS front-end for GPS applications,” in Low Power Electronics and Design, 2000. ISLPED ’00. Proceedings of the 2000 International Symposium on, 2000, pp. 279-283.

[Bibtex]`@INPROCEEDINGS{2000Sveltob, author = {Svelto, F. and Deantoni, S. and Montagna, G. and Castello, R.}, title = {An 8 mA, 3.8 dB NF, 40 dB gain CMOS front-end for GPS applications}, booktitle = {Low Power Electronics and Design, 2000. ISLPED '00. Proceedings of the 2000 International Symposium on}, year = {2000}, pages = {279-283}, doi = {10.1109/LPE.2000.155299}, keywords = {CMOS analogue integrated circuits;Global Positioning System;UHF amplifiers;UHF integrated circuits;UHF mixers;circuit tuning;integrated circuit design;integrated circuit noise;low-power electronics;radio receivers;0.35 micron;1.3 GHz;140 MHz;2.8 V;3.8 dB;40 dB;8 mA;CMOS front-end;GPS applications;Gilbert cell;MOS varactor;differential pair;double conversion architecture;frequency tuning;fully differential LNA;inductively degenerated input stage;low-power operation;mixer;resonant LC load;Frequency;Gain;Global Positioning System;MOS devices;Mixers;Noise measurement;Resonance;Topology;Tuning;Varactors}, timestamp = {2015.03.04} }`

- F. Svelto, S. Manzini, and R. Castello, “A three terminal varactor for RF IC’s in standard CMOS technology,” Electron Devices, IEEE Transactions on, vol. 47, iss. 4, pp. 893-895, 2000.

[Bibtex]`@ARTICLE{2000Sveltoc, author = {Svelto, F. and Manzini, S. and Castello, R.}, title = {A three terminal varactor for RF IC's in standard CMOS technology}, journal = {Electron Devices, IEEE Transactions on}, year = {2000}, volume = {47}, pages = {893-895}, number = {4}, month = {Apr}, doi = {10.1109/16.831011}, issn = {0018-9383}, keywords = {CMOS analogue integrated circuits;MIS devices;Q-factor;UHF integrated circuits;UHF oscillators;circuit tuning;varactors;voltage-controlled oscillators;0.35 micron;1800 MHz;MOS varactor;RF IC;RFIC;VCO tuning element;accumulation;capacitance tuning;deep depletion;highly integrated CMOS transceivers;standard CMOS technology;three terminal varactor;CMOS integrated circuits;CMOS technology;Circuit optimization;Degradation;Immune system;MOSFET circuits;Radio frequency;Radiofrequency integrated circuits;Tuning;Varactors}, timestamp = {2015.03.04} }`

- F. Svelto, G. Montagna, S. Deantoni, G. Braschi, and R. Castello, “Solutions for image rejection CMOS LNA,” in Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on, 2000, p. 49-52 vol.3.

[Bibtex]`@INPROCEEDINGS{2000Sveltod, author = {Svelto, F. and Montagna, G. and Deantoni, S. and Braschi, G. and Castello, R.}, title = {Solutions for image rejection CMOS LNA}, booktitle = {Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on}, year = {2000}, volume = {3}, pages = {49-52 vol.3}, doi = {10.1109/ISCAS.2000.855993}, keywords = {CMOS analogue integrated circuits;Q-factor;UHF amplifiers;UHF integrated circuits;cordless telephone systems;frequency control;integrated circuit noise;low-power electronics;notch filters;telephone sets;varactors;1.88 GHz;2.2 GHz;300 MHz;4.5 dB;5.5 dB;DECT applications;Q-enhancement circuit;frequency control;highly integrated CMOS receivers;image rejection CMOS LNA;integrated MOS varactor;notch filter;wideband IF architecture;Active inductors;CMOS technology;Energy consumption;Frequency control;Noise figure;Noise measurement;Passive filters;RLC circuits;Tuning;Varactors}, timestamp = {2015.03.04} }`

### 1999

- P. Arcioni, R. Castello, L. Perregrini, E. Sacchi, and F. Svelto, “An innovative modelization of loss mechanism in silicon integrated inductors,” Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on, vol. 46, iss. 12, pp. 1453-1460, 1999.

[Bibtex]`@ARTICLE{1999Arcioni, author = {Arcioni, P. and Castello, R. and Perregrini, L. and Sacchi, E. and Svelto, F.}, title = {An innovative modelization of loss mechanism in silicon integrated inductors}, journal = {Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on}, year = {1999}, volume = {46}, pages = {1453-1460}, number = {12}, month = {Dec}, doi = {10.1109/82.809531}, issn = {1057-7130}, keywords = {BiCMOS integrated circuits;CMOS integrated circuits;Q-factor;S-parameters;UHF integrated circuits;elemental semiconductors;equivalent circuits;inductors;integrated circuit modelling;losses;lumped parameter networks;silicon;1.8 GHz;BiCMOS IC;CMOS IC;Q-factor;S-parameters;Si;lumped element equivalent circuit model;metal losses;parasitic effects;radio frequency integrated circuit;silicon integrated inductor;substrate losses;wideband two-port measurement;BiCMOS integrated circuits;CMOS technology;Conductivity;Equivalent circuits;Gallium arsenide;Inductors;Integrated circuit technology;Radio frequency;Radiofrequency integrated circuits;Silicon}, timestamp = {2015.03.04} }`

- R. Castello, I. Bietti, and F. Svelto, “High-frequency analog filters in deep-submicron CMOS technology,” in Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International, 1999, pp. 74-75.

[Bibtex]`@INPROCEEDINGS{1999Castello, author = {Castello, R. and Bietti, I. and Svelto, F.}, title = {High-frequency analog filters in deep-submicron CMOS technology}, booktitle = {Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International}, year = {1999}, pages = {74-75}, month = {Feb}, doi = {10.1109/ISSCC.1999.759108}, issn = {0193-6530}, keywords = {CMOS analogue integrated circuits;VLSI;antialiasing;continuous time filters;equalisers;radiofrequency filters;sigma-delta modulation;/spl Sigma//spl Delta/ converter;CMOS;anti-alias filters;continuous-time filters;data recording channels;deep-submicron technology;equalizers;high-frequency analog filters;post processing blocks;preconditioning filters;preprocessing blocks;system speed;Bandwidth;CMOS technology;Calibration;Circuits;Crosstalk;Frequency;Low pass filters;Resonator filters;Transconductors;Tuning}, timestamp = {2015.03.04} }`

- F. Svelto, M. Conta, V. Della Torre, and R. Castello, “A low-voltage topology for CMOS RF mixers,” Consumer Electronics, IEEE Transactions on, vol. 45, iss. 2, pp. 299-309, 1999.

[Bibtex]`@ARTICLE{1999Svelto, author = {Svelto, F. and Conta, M. and Della Torre, V. and Castello, R.}, title = {A low-voltage topology for CMOS RF mixers}, journal = {Consumer Electronics, IEEE Transactions on}, year = {1999}, volume = {45}, pages = {299-309}, number = {2}, month = {May}, doi = {10.1109/30.793413}, issn = {0098-3063}, keywords = {CMOS integrated circuits;cellular radio;differential amplifiers;mixers (circuits);network topology;transceivers;0.5 micron;2 V;21 dB;24 dB;3.8 mA;CMOS Gilbert cell;CMOS RF mixers;CMOS technology;DCS-1800 mobile telephone standards;GSM standards;IF stage;IIP3;MOS transistors;RF transceivers;bipolar technology;linear down-converters;linear region;low-voltage topology;noise figure;quad differential pair;resistive degeneration;single side band NF;spurious free dynamic range;supply voltage;CMOS technology;Circuits;Dynamic range;Linearity;Low voltage;MOSFETs;Noise figure;Noise measurement;Radio frequency;Topology}, timestamp = {2015.03.04} }`

- F. Svelto, S. Deantoni, and R. Castello, “A 1.3 GHz CMOS VCO with 28% frequency tuning,” in Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999, 1999, pp. 645-648.

[Bibtex]`@INPROCEEDINGS{1999Sveltoa, author = {Svelto, F. and Deantoni, S. and Castello, R.}, title = {A 1.3 GHz CMOS VCO with 28% frequency tuning}, booktitle = {Custom Integrated Circuits, 1999. Proceedings of the IEEE 1999}, year = {1999}, pages = {645-648}, doi = {10.1109/CICC.1999.777363}, keywords = {CMOS analogue integrated circuits;UHF integrated circuits;UHF oscillators;circuit tuning;inductors;phase noise;voltage-controlled oscillators;1.3 GHz;2 V;6 mA;CMOS;LC-tank VCO;bondwire;component variations;frequency tuning;phase noise;spiral inductor;Bonding;CMOS process;Frequency;Inductors;Noise measurement;Phase measurement;Spirals;Tuning;Varactors;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

- F. Svelto, P. Erratico, S. Manzini, and R. Castello, “A metal-oxide-semiconductor varactor,” Electron Device Letters, IEEE, vol. 20, iss. 4, pp. 164-166, 1999.

[Bibtex]`@ARTICLE{1999Sveltob, author = {Svelto, F. and Erratico, P. and Manzini, S. and Castello, R.}, title = {A metal-oxide-semiconductor varactor}, journal = {Electron Device Letters, IEEE}, year = {1999}, volume = {20}, pages = {164-166}, number = {4}, month = {April}, doi = {10.1109/55.753754}, issn = {0741-3106}, keywords = {CMOS integrated circuits;Q-factor;UHF integrated circuits;circuit tuning;varactors;voltage-controlled oscillators;0.35 micron;1.8 GHz;3.1 pF;CMOS technology scaling;Q factor;capacitance change;controlling voltage;metal-oxide-semiconductor varactor;oxide capacitance;parasitic resistance;quality factor;tuning range;variable capacitors;CMOS technology;Integrated circuit technology;MOS capacitors;Parasitic capacitance;Q factor;Radio frequency;Tuning;Varactors;Voltage control;Voltage-controlled oscillators}, timestamp = {2015.03.04} }`

### 1998

- P. Arcioni, R. Castello, G. De Astis, E. Sacchi, and F. Svelto, “Measurement and modeling of Si integrated inductors,” Instrumentation and Measurement, IEEE Transactions on, vol. 47, iss. 5, pp. 1372-1378, 1998.

[Bibtex]`@ARTICLE{1998Arcioni, author = {Arcioni, P. and Castello, R. and De Astis, G. and Sacchi, E. and Svelto, F.}, title = {Measurement and modeling of Si integrated inductors}, journal = {Instrumentation and Measurement, IEEE Transactions on}, year = {1998}, volume = {47}, pages = {1372-1378}, number = {5}, month = {Oct}, doi = {10.1109/19.746613}, issn = {0018-9456}, keywords = {S-parameters;elemental semiconductors;equivalent circuits;inductors;silicon;S-parameters;Si;lumped element model;parasitic effects;silicon substrate;spiral integrated inductor;wideband two-port measurement;CMOS process;CMOS technology;Conductivity;Inductors;Q factor;Semiconductor device measurement;Silicon;Spirals;Testing;Wideband}, timestamp = {2015.03.04} }`

- P. Arcioni, R. Castello, G. De Astis, E. Sacchi, and F. Svelto, “Design and characterization of Si integrated inductors,” in Instrumentation and Measurement Technology Conference, 1998. IMTC/98. Conference Proceedings. IEEE, 1998, p. 1395-1401 vol.2.

[Bibtex]`@INPROCEEDINGS{1998Arcionia, author = {Arcioni, P. and Castello, R. and De Astis, G. and Sacchi, E. and Svelto, F.}, title = {Design and characterization of Si integrated inductors}, booktitle = {Instrumentation and Measurement Technology Conference, 1998. IMTC/98. Conference Proceedings. IEEE}, year = {1998}, volume = {2}, pages = {1395-1401 vol.2}, month = {May}, doi = {10.1109/IMTC.1998.676983}, issn = {1091-5281}, keywords = {BiCMOS integrated circuits;CMOS integrated circuits;S-parameters;electric variables measurement;elemental semiconductors;equivalent circuits;inductors;integrated circuit design;lumped parameter networks;silicon;substrates;two-port networks;BiCMOS;CMOS;S-parameters;Si;Si integrated inductors;Si substrate;lumped element model;parasitic effects;performance;spiral integrated inductors;wideband two-port measurement;CMOS process;CMOS technology;Conducting materials;Cutoff frequency;Inductors;Scattering parameters;Silicon;Spirals;Testing;Thermal conductivity}, timestamp = {2015.03.04} }`

- P. Arcioni, R. Castello, L. Perregrini, E. Sacchi, and F. Svelto, “An improved lumped-element equivalent circuit for on silicon integrated inductors,” in Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE, 1998, pp. 301-304.

[Bibtex]`@INPROCEEDINGS{1998Arcionib, author = {Arcioni, P. and Castello, R. and Perregrini, L. and Sacchi, E. and Svelto, F.}, title = {An improved lumped-element equivalent circuit for on silicon integrated inductors}, booktitle = {Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE}, year = {1998}, pages = {301-304}, month = {Aug}, doi = {10.1109/RAWCON.1998.709196}, keywords = {BiCMOS integrated circuits;CMOS integrated circuits;Q-factor;S-parameters;electromagnetic coupling;elemental semiconductors;equivalent circuits;inductors;integrated circuit modelling;least squares approximations;lumped parameter networks;semiconductor device models;silicon;BiCMOS technology;CMOS substrate;Q-factor;RF IC;S-parameters;Si;electromagnetic coupling;least square minima;lumped-element equivalent circuit;magnetic coupling;metal strips;silicon integrated inductors;two-port wide-band measurement;Coupling circuits;Electromagnetic coupling;Electromagnetic measurements;Equivalent circuits;Inductors;Q factor;Silicon;Spirals;Strips;Wideband}, timestamp = {2015.03.04} }`

- F. Svelto, “Very accurate high-frequency noise spectral analysis of P-channel FET’s,” Instrumentation and Measurement, IEEE Transactions on, vol. 47, iss. 2, pp. 417-422, 1998.

[Bibtex]`@ARTICLE{1998Svelto, author = {Svelto, F.}, title = {Very accurate high-frequency noise spectral analysis of P-channel FET's}, journal = {Instrumentation and Measurement, IEEE Transactions on}, year = {1998}, volume = {47}, pages = {417-422}, number = {2}, month = {Apr}, doi = {10.1109/19.744184}, issn = {0018-9456}, keywords = {CMOS analogue integrated circuits;MOSFET;electric noise measurement;feedback amplifiers;instrumentation amplifiers;integrated circuit noise;operational amplifiers;preamplifiers;semiconductor device noise;spectral analysers;spectral analysis;100 Hz to 10 MHz;CMOS technology;P-channel FET;PMOSEET devices;accurate HF noise spectral analysis;bench-unit instrument;cascaded amplifiers;feedback amplifiers;intrinsic amplifier contribution;noise model;single FET device interface;spectrum analyzers;ultra low-noise amplifier;Bandwidth;Circuit noise;FETs;Feedback;Frequency;Instruments;Low-frequency noise;Low-noise amplifiers;Spectral analysis;Voltage}, timestamp = {2015.03.04} }`

### 1997

- A. Baschirotto, G. Cesura, F. Rezzi, and F. Svelto, “Low-power BiCMOS continuous-time shaping filter,” Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on, vol. 44, iss. 5, pp. 404-406, 1997.

[Bibtex]`@ARTICLE{1997Baschirotto, author = {Baschirotto, A. and Cesura, G. and Rezzi, F. and Svelto, F.}, title = {Low-power BiCMOS continuous-time shaping filter}, journal = {Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on}, year = {1997}, volume = {44}, pages = {404-406}, number = {5}, month = {May}, doi = {10.1109/82.580851}, issn = {1057-7130}, keywords = {BiCMOS analogue integrated circuits;band-pass filters;biquadratic filters;continuous time filters;detector circuits;integrated circuit measurement;integrated circuit noise;nuclear electronics;pulse shaping circuits;1.25 mW;18 to 30 ns;2 mum;5 V;BiCMOS continuous-time shaping filter;biquadratic band-pass filter structure;biquadratic continuous-time filter;chip active area;elementary particles experiments;input referred noise;input signal amplitude;integral nonlinearity;microstrip detector applications;power consumption;read-out electronics;semi-Gaussian response;shaping time;signal shaper;single 5 V power supply;Band pass filters;BiCMOS integrated circuits;Capacitors;Elementary particles;Energy consumption;Frequency;Preamplifiers;Signal design;Tunable circuits and devices;Tuning}, timestamp = {2015.03.04} }`

- R. Castello, M. Conta, V. Della Torre, and F. Svelto, “A low-voltage CMOS downconversion mixer for RF applications,” in Solid-State Circuits Conference, 1997. ESSCIRC ’97. Proceedings of the 23rd European, 1997, pp. 136-139.

[Bibtex]`@INPROCEEDINGS{1997Castello, author = {Castello, R. and Conta, M. and Della Torre, V. and Svelto, F.}, title = {A low-voltage CMOS downconversion mixer for RF applications}, booktitle = {Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European}, year = {1997}, pages = {136-139}, month = {Sept}, keywords = {CMOS technology;Circuits;Costs;Current supplies;Energy consumption;Linearity;Low voltage;MOSFETs;Radio frequency;Switches}, timestamp = {2015.03.04} }`

### 1993

- A. Baschirotto, G. Cesura, F. Rezzi, and F. Svelto, “A BiCMOS tunable shaper for detectors of elementary particles,” in Circuits and Systems, 1993., ISCAS ’93, 1993 IEEE International Symposium on, 1993, p. 1077-1080 vol.2.

[Bibtex]`@INPROCEEDINGS{1993Baschirotto, author = {Baschirotto, A. and Cesura, G. and Rezzi, F. and Svelto, F.}, title = {A BiCMOS tunable shaper for detectors of elementary particles}, booktitle = {Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on}, year = {1993}, pages = {1077-1080 vol.2}, month = {May}, doi = {10.1109/ISCAS.1993.393921}, keywords = {BiCMOS analogue integrated circuits;Q-factor;analogue processing circuits;biquadratic filters;circuit tuning;continuous time filters;integrated circuit noise;nuclear electronics;particle detectors;transient response;20 ns;200 muA;240 mV;BiCMOS tunable shaper;Q-factor adjustment;active filters;biquadratic continuous-time filter;electronic read-out channel;elementary particles detectors;noise shaper;quality factor;semi-Gaussian response;signal processing;transient response;BiCMOS integrated circuits;Detectors;Elementary particles;Filters;Network synthesis;Noise shaping;Q factor;Signal design;Signal processing;Signal synthesis}, timestamp = {2015.03.04} }`

- V. Radeka, S. Rescia, P. F. Manfredi, V. Speziali, and F. Svelto, “JFET monolithic preamplifier with outstanding noise behaviour and radiation hardness characteristics,” Nuclear Science, IEEE Transactions on, vol. 40, iss. 4, pp. 744-749, 1993.

[Bibtex]`@ARTICLE{1993Radeka, author = {Radeka, V. and Rescia, S. and Manfredi, P.F. and Speziali, V. and Svelto, F.}, title = {JFET monolithic preamplifier with outstanding noise behaviour and radiation hardness characteristics}, journal = {Nuclear Science, IEEE Transactions on}, year = {1993}, volume = {40}, pages = {744-749}, number = {4}, month = {Aug}, doi = {10.1109/23.256654}, issn = {0018-9499}, keywords = {field effect integrated circuits;junction gate field effect transistors;linear integrated circuits;nuclear electronics;preamplifiers;radiation hardening (electronics);semiconductor device noise;JFET monolithic preamplifier;calorimetry;epitaxial channel JFETs;large capacitance detectors;low capacitance pre-shower detectors;noise;noise behaviour;pinch-off voltage;power dissipation;radiation damage;radiation hardness;Capacitance;Current measurement;Density measurement;Detectors;Impedance;JFET circuits;Power dissipation;Preamplifiers;Resistors;Voltage control}, timestamp = {2015.03.04} }`

### 1992

- V. Radeka, S. Rescia, P. F. Manfredi, V. Speziali, and F. Svelto, “Low noise, high radiation hardness front-end circuits based upon an upgraded JFET monolithic process,” in Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE, 1992, p. 421-423 vol.1.

[Bibtex]`@INPROCEEDINGS{1992Radeka, author = {Radeka, V. and Rescia, S. and Manfredi, P.F. and Speziali, V. and Svelto, F.}, title = {Low noise, high radiation hardness front-end circuits based upon an upgraded JFET monolithic process}, booktitle = {Nuclear Science Symposium and Medical Imaging Conference, 1992., Conference Record of the 1992 IEEE}, year = {1992}, pages = {421-423 vol.1}, month = {Oct}, doi = {10.1109/NSSMIC.1992.301279}, keywords = {junction gate field effect transistors;nuclear electronics;preamplifiers;radiation hardening (electronics);semiconductor device noise;buried layer process;calorimetry;dynamic behavior;epitaxial channel JFETs;monolithic preamplifiers;noise;pinch-off voltage;power dissipation;radiation hardness;Calorimetry;Circuit noise;Current measurement;Impedance;JFET circuits;Laboratories;Packaging;Preamplifiers;Resistors;Voltage}, timestamp = {2015.03.04} }`

### 1978

- L. Fiorina, S. Mezzetti, and F. Svelto, “Low-loss Y-coupler for multimode single fibres,” Electronics Letters, vol. 14, iss. 25, pp. 808-809, 1978.

[Bibtex]`@ARTICLE{1978Fiorina, author = {Fiorina, L. and Mezzetti, S. and Svelto, F.}, title = {Low-loss Y-coupler for multimode single fibres}, journal = {Electronics Letters}, year = {1978}, volume = {14}, pages = {808-809}, number = {25}, month = {December}, __markedentry = {[:]}, doi = {10.1049/el:19780545}, issn = {0013-5194}, keywords = {optical couplers;optical fibres;low loss Y coupler;multimode single fibres;optical fibres;step index fibre}, timestamp = {2015.03.04} }`