Development of a detector compatible monolithic technology
for front-end electronics integration on high-resistivity silicon
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M. Manghisoni, L. Ratti, V. Re, V. Speziali, G. Traversi
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Monolithic integration of detectors and front-end electronics on the
same chip can greatly improve the mechanical stability of readout
systems, as well as enhance their noise performance by minimizing the
stray capacitance due to the connections between detectors and
preamplifiers. Fabrication of multichannel chips with integrated
sensors, providing analog signal processing, data sampling and
multiplexing and output serialization might be useful to simplify the
wire bonding step and relax the constraints relevant to the bonding
pad size. Moreover, in a present-day complex detection
apparatus, monolithic integration of radiation sensors may provide the
required mechanical stability and reliability.
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This research program
aims to fabricate strip detectors with integrated electronics on high
resistivity silicon, for imaging (medical and industrial) applications
and particle tracking in high energy physics experiments. The activity
is focused on the design and the experimental characterization of
readout electronics. Static and noise characteristics of a first set
of JFET test structures with different gate length and width,
fabricated on high resistivity silicon at IRST (Institute for
Scientific and Technological Research), have already been
measured. This activity has been carried out using instrumentation
which was purposely developed by the Pavia group, including a
low-noise amplifier for the measurement of series noise spectral
density. A model for circuit simulation has been extracted from the
experimental data and have been used for the design of test devices
consisting of single transistors, charge sensitive amplifiers and
integrated microstrip-JFET structures, submitted at the end of
2000. The available test structures have also been characterized from
the standpoint of radiation tolerance using a 60Co g-ray
source.
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