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Gamma-ray response of SOI bipolar junction transistors
for fast, radiation tolerant front-end electronics
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M. Manghisoni, L. Ratti, V. Re,
V. Speziali,
G. Traversi
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The potential of Silicon On Insulator (SOI) technologies as to integrated circuit
scaling is widely acknowledged. Ideally perfect isolation, compared to conventional
bulk processes, can be achieved through dielectric separation of transistors,
leading to higher integration density, reduced stray capacitances and improved
device speed. Moreover, digital (and secondly analog) sections in mixed-signal
circuits can benefit from the SEE-tolerant properties of SOI processes.
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This activity is concerned with the study of gamma radiation effects
on the electrical parameters
of complementary bipolar junction transistors, part of an SOI BiCMOS
process, in view of the design of fast, rad-hard analog blocks. A survey of the
total ionizing dose (TID) response has been carried out paying particular attention
to its dependence on layout and process choices. Final integrated doses are
compatible with operation in the space environment and in high energy physics
experiments involving moderately high radiation levels. The issue of Enhanced
Low Dose Rate Sensitivity (ELDRS) has been addressed by a preliminary characterization
of transistors exposed to 60Co sources with different activities.
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