Lecturer: Rinaldo Castello  

Course name: Dispositivi elettronici
Course code: 064009
Degree course: Ingegneria Elettronica
Disciplinary field of science: ING-INF/01
The course relates to:
University credits: CFU 5
Course website: http://ingegneria.unipv.it/didattica/schedacorso0910.ph
p?cod=064009&spec=0

Specific course objectives

The course is based upon the knowledge of the physical mechanisms that define the operation of the more relevant solid state electronic devices. Starting from this foundation the student will be able to acquire a detail knowledge of the analytical circuit model that describe the behavior of such a device including an introduction to the numerical model used by circuit simulators. The course will concentrate the more largely used devices i.e. those available within both Bipolar and CMOS integrated circuit technologies.

Course programme

The course will build upon the knowledge acquired in the course on Solid State Semiconductor Physics to derive the analytical model of the more relevant solid state electronic devices. To ensure a smooth transition between the background know how and the new material presented, the course starts with a review of the key point of the Solid State Semiconductor Physics course.

p-n Junction
Non uniform doping in a semiconductor material. Reverse biased p-n junction. Forward biased p-n junction, current-voltage characteristic. Charge storage and transient analysis. Model of the p-n junction (diode) in the various operating regions.

Bipolar transistor BJT
Transistor effect. Ebers –Moll model. Overview of the models used by the circuit simulators (e.g. SPICE). Desription of a BJT transistor within an integrated circuit. Early effect. Very low and very high injection levels. Kirk effect and Webster effect. Charge control model and use of the model for the transient analysis. Small signal model (“pi” model).

MOS Structure
Capacitance-voltage characteristic of the MOS structure. Possible surface condition: accumulation, depletion and inversion. Flat-band voltage and threshold voltage.

MOS Transistor
Current-voltage characteristic of the MOS structure. Small signal and large signal model for the MOS transistor. Second order effects: short and narrow channel devices and sub-threshold conduction.

JFET Transistor
Current–voltage characteristic.

Course entry requirements

Basic knowledge of solid state physics e.g. quantum mechanics statistical mechanic etc.

Course structure and teaching

Lectures (hours/year in lecture theatre): 38
Practical class (hours/year in lecture theatre): 4
Practicals / Workshops (hours/year in lecture theatre): 0
Project work (hours/year in lecture theatre): 0

Suggested reading materials

The adopted text book is written in English.

Muller. R.S. Kamins T.I.. Device Electronics for Integrated Circuits Second Edition. John Wiley & Sons New York. .

Testing and exams

Final oral exam.